Light emitting device

• US 8,482,034 B2
• Filed: 04/04/2012
• Issued: 07/09/2013
• Est. Priority Date: 03/13/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Song, Hyun Don
• Primary Examiner(s): Weiss, Howard
• Assistant Examiner(s): Rao, Steven
• Application Number:
  US13/439,668
• Publication Number:
  US 20120193668A1
• Time in Patent Office: 461 Days
• Field of Search: 257/74, 257/94, 257/97
• US Class Current: 257/190
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light emitting device including a light emitting structure having a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a first electrode on the light emitting structure; and a photon escape layer on the light emitting structure. Further, the photon escape layer has a refractive index that is between a refractive index of the light emitting structure and a refractive index of an encapsulating material with respect to the light emitting structure such that an escape probability for photons emitted by the light emitting structure is increased.

Claims

1. A light emitting device, comprising:

a light emitting structure, wherein the light emitting structure includes a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;

a first electrode on the first conductive semiconductor layer;

a photon escape layer on a portion of the first electrode and the light emitting structure; and

a pad on the first electrode,

wherein the photon escape layer has a refractive index that is between a refractive index of the light emitting structure and a refractive index of an encapsulating material with respect to the light emitting structure, and

wherein a top surface of the photon escape layer is higher than a top surface of the pad.

2. The light emitting device according to claim 1, wherein the top surface of the photon escape layer is higher than a top surface of the first electrode.

3. The light emitting device according to claim 1, wherein a bottom surface of the photon escape layer is substantially flush with a bottom surface of the pad.

4. The light emitting device according to claim 1, wherein a bottom surface of the photon escape layer is substantially flush with a bottom surface of the first electrode.

5. The light emitting device according to claim 1, wherein the pad does not vertically overlap with the photon escape layer.

6. The light emitting device according to claim 1, wherein the photon escape layer is both directly disposed on the first electrode and the first conductive semiconductor layer.

7. The light emitting device according to claim 1, wherein the pad contacts a side surface of the photon escape layer.

8. The light emitting device according to claim 1, wherein the pad is substantially disposed in the photon escape layer.

9. The light emitting device according to claim 1, wherein the photon escape layer comprises a conductive film.

10. The light emitting device according to claim 1, wherein the photon escape layer comprises a dielectric film.

11. The light emitting device according to claim 1, wherein the photon escape layer comprises a transmitting layer.

12. The light emitting device according to claim 1, further comprising a second electrode under the second conductive semiconductor layer.

13. The light emitting device according to claim 1, wherein the first electrode comprises a wing type or a lattice pattern.

14. The light emitting device according to claim 1, further comprising an insulating layer around the light emitting structure.

15. The light emitting device according to claim 14, wherein a material of the photon escape layer is different from a material of the insulating layer.

16. The light emitting device according to claim 14, wherein the photon escape layer physically contacts all of the insulating layer, the first conductive semiconductor layer and the first electrode.

17. A light emitting device, comprising:

a light emitting structure, wherein the light emitting structure includes a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;

a first electrode on the first conductive semiconductor layer; and

a photon escape layer on a portion of the first electrode and the light emitting structure,

wherein the photon escape layer has a refractive index that is between a refractive index of the light emitting structure and a refractive index of an encapsulating material with respect to the light emitting structure, and

wherein the first electrode comprises a portion of protruding into the photon escape layer.

18. The light emitting device according to claim 17, wherein a top surface of the photon escape layer is higher than a top surface of the first electrode.

19. The light emitting device according to claim 17, wherein a bottom surface of the photon escape layer is substantially flush with a bottom surface of the first electrode.

20. The light emitting device according to claim 17, wherein the photon escape layer is both directly disposed on the first electrode and the first conductive semiconductor layer.