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Non-volatile magnetic tunnel junction transistor

  • US 8,482,968 B2
  • Filed: 11/13/2010
  • Issued: 07/09/2013
  • Est. Priority Date: 11/13/2010
  • Status: Active Grant
First Claim
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1. An apparatus for creating a magnetic field, the apparatus comprising:

  • a writer including a first magnetic write layer and a second magnetic write layer;

    wherein the writer, when energized by a first write voltage, is configured to switch a magnetic anisotropy of the first magnetic write layer from parallel to a plane of the first magnetic write layer to orthogonal to the plane of the first magnetic write layer such that the second magnetic write layer induces a first magnetic field in a region proximate the writer; and

    wherein the writer, when energized by a second write voltage, is configured to switch a magnetic anisotropy of the second magnetic write layer from parallel to a plane of the second magnetic write layer to orthogonal to the plane of the second magnetic write layer such that the first magnetic write layer induces a second magnetic field in the region proximate the writer, the second magnetic field being in a direction opposite the first magnetic field.

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