Estimation of memory cell read thresholds by sampling inside programming level distribution intervals

• US 8,482,978 B1
• Filed: 06/28/2011
• Issued: 07/09/2013
• Est. Priority Date: 09/14/2008
• Status: Active Grant

• Current Assignee: Apple Inc.
• Original Assignee: Apple Inc.
• Inventors: Perlmutter, Uri, Winter, Shai, Gurgi, Eyal, Golov, Oren, Anholt, Micha
• Primary Examiner(s): Nguyen, Viet Q
• Application Number:
  US13/170,202
• Time in Patent Office: 742 Days
• Field of Search: 365/185.03, 365/185.09, 365/185.24, 365/185.22
• US Class Current: 365/185.03
• CPC Class Codes: G11C 11/5642 Sensing or reading circuits; Data output circuits
• CPC Class Codes: G11C 16/26 Sensing or reading circuits; Data output circuits
• CPC Class Codes: G11C 2211/5634 Reference cells
• CPC Class Codes: G11C 27/005 with non-volatile charge storage, e.g. on floating gate or MNOS

Abstract

A method for data storage includes storing data in a group of analog memory cells by writing into the memory cells in the group respective storage values, which program each of the analog memory cells to a respective programming state selected from a predefined set of programming states, including at least first and second programming states, which are applied respectively to first and second subsets of the memory cells, whereby the storage values held in the memory cells in the first and second subsets are distributed in accordance with respective first and second distributions. A first median of the first distribution is estimated, and a read threshold, which differentiates between the first and second programming states, is calculated based on the estimated first median. The data is retrieved from the analog memory cells in the group by reading the storage values using the calculated read threshold.

Claims

1. A method for data storage, comprising:

storing data in a group of analog memory cells by writing into the memory cells in the group respective storage values, which program each of the analog memory cells to a respective programming state selected from a predefined set of programming states, including at least first and second programming states, which are applied respectively to first and second subsets of the memory cells, whereby the storage values held in the memory cells in the first and second subsets are distributed in accordance with respective first and second distributions;

estimating a first median of the first distribution;

calculating a read threshold, which differentiates between the first and second programming states, based on the estimated first median; and

retrieving the data from the analog memory cells in the group by reading the storage values using the calculated read threshold,

wherein the storage values corresponding to the first programming state lie in a given interval and wherein estimating the first median includes;

reading at least some of the storage values using one or more intermediate read thresholds, which are positioned inside of the given interval;

counting the storage values falling on a given side of each of the intermediate read thresholds; and

wherein assessing the first median comprises computing the first median based on the counted storage values.

2. The method according to claim 1, wherein estimating the first median comprises holding an estimated Cumulative Distribution Function (CDF) of the first distribution, and assessing the first median responsively to the storage values read using the intermediate read thresholds and to the estimated CDF.

3. The method according to claim 2, wherein estimating the first median comprises assessing the first median responsively to the estimated CDF and to the storage values read using only a single intermediate read threshold.

4. The method according to claim 2, wherein holding the estimated CDF comprises holding multiple estimated CDFs, and wherein assessing the first median comprises selecting one of the multiple CDFs in accordance with a predefined criterion, and assessing the first median using the selected estimated CDF.

5. The method according to claim 1, wherein counting the storage values comprises incrementing one or more hardware-based counters.

6. The method according to claim 1, wherein reading the storage values using the intermediate read thresholds comprises reading the storage values from only a partial subset of the memory cells in the group.

7. The method according to claim 1, wherein reading the storage values using the intermediate read thresholds comprises reading the storage values using two or more intermediate read thresholds in a single multi-threshold read command.

8. The method according to claim 1, wherein estimation of the first median and calculation of the read threshold are invoked responsively to a failure to successfully retrieve the data.

9. The method according to claim 1, and comprising calculating a second median of the second distribution, wherein calculating the read threshold comprises estimating the read threshold based on the first and second medians.

10. The method according to claim 9, wherein estimating the read threshold comprises calculating a first estimate of the read threshold based on the first median, calculating a second estimate of the read threshold based on the second median, and combining the first and second estimates.

11. The method according to claim 9, wherein estimating the first and second medians comprises holding predefined nominal values of the first and second medians, and assessing the first and second medians responsively to the nominal values.

12. Apparatus for data storage, comprising:

an interface, which is coupled to communicate with a memory that includes multiple analog memory cells; and

circuitry, which is configured to;

store data in a group of the analog memory cells by writing into the memory cells in the group respective storage values, which program each of the analog memory cells to a respective programming state selected from a predefined set of programming states, including at least first and second programming states, which are applied respectively to first and second subsets of the memory cells, whereby the storage values held in the memory cells in the first and second subsets are distributed in accordance with respective first and second distributions;

estimate a first median of the first distribution;

calculate a read threshold, which differentiates between the first and second programming states, based on the estimated first median, and

retrieve the data from the analog memory cells in the group by reading the storage values using the calculated read threshold;

wherein the storage values corresponding to the first programming state lie in a given interval and wherein to estimate the first median the circuitry is configured to;

read at least some of the storage values using one or more intermediate read thresholds, which are positioned inside of the given interval,

count the storage values falling on a given side of each of the intermediate read thresholds; and

compute the first median based on the counted storage values.

13. The apparatus according to claim 12, wherein the circuitry is configured to store an estimated Cumulative Distribution Function (CDF) of the first distribution, and to assess the first median responsively to the storage values read using the intermediate read thresholds and to the estimated CDF.

14. The apparatus according to claim 13, wherein the circuitry is configured to assess the first median responsively to the estimated CDF and to the storage values read using only a single intermediate read threshold.

15. The apparatus according to claim 13, wherein the circuitry is configured to store multiple estimated CDFs, to select one of the multiple CDFs in accordance with a predefined criterion, and to assess the first median using the selected estimated CDF.

16. The apparatus according to claim 12, wherein the circuitry comprises one or more hardware-based counters, and is configured to count the storage values by incrementing the counters.

17. The apparatus according to claim 12, wherein the circuitry is configured to read the storage values using the intermediate read thresholds from only a partial subset of the memory cells in the group.

18. The apparatus according to claim 12, wherein the circuitry is configured to read the storage values using two or more intermediate read thresholds in a single multi-threshold read command.

19. The apparatus according to claim 12, wherein the circuitry is configured to estimate the first median and calculate the read threshold responsively to a failure to successfully retrieve the data.

20. The apparatus according to claim 12, wherein the circuitry is configured to calculate a second median of the second distribution, and to estimate the read threshold based on the first and second medians.

21. The apparatus according to claim 20, wherein the circuitry is configured to calculate a first estimate of the read threshold based on the first median, to calculate a second estimate of the read threshold based on the second median, and to calculate the read threshold by combining the first and second estimates.

22. The apparatus according to claim 20, wherein the circuitry is configured to store predefined nominal values of the first and second medians, and to assess the first and second medians responsively to the nominal values.

23. Apparatus for data storage, comprising:

a memory comprising multiple analog memory cells; and

circuitry, which is configured to store data in a group of the analog memory cells by writing into the memory cells in the group respective storage values, which program each of the analog memory cells to a respective programming state selected from a predefined set of programming states, including at least first and second programming states, which are applied respectively to first and second subsets of the memory cells, whereby the storage values held in the memory cells in the first and second subsets are distributed in accordance with respective first and second distributions;

estimate a first median of the first distribution;

calculate a read threshold, which differentiates between the first and second programming states, based on the estimated first median, and

retrieve the data from the analog memory cells in the group by reading the storage values using the calculated read threshold;

wherein the storage values corresponding to the first programming state lie in a given interval and wherein to estimate the first median the circuitry is configured to;

read at least some of the storage values using one or more intermediate read thresholds, which are positioned inside of the given interval,

count the storage values falling on a given side of each of the intermediate read thresholds; and

compute the first median based on the counted storage values.

24. The apparatus according to claim 23, wherein the circuitry is configured to store an estimated Cumulative Distribution Function (CDF) of the first distribution, and to assess the first median responsively to the storage values read using the intermediate read thresholds and to the estimated CDF.

25. The apparatus according to claim 24, wherein the circuitry is configured to assess the first median responsively to the estimated CDF and to the storage values read using only a single intermediate read threshold.

26. The apparatus according to claim 24, wherein the circuitry is configured to store multiple estimated CDFs, to select one of the multiple CDFs in accordance with a predefined criterion, and to assess the first median using the selected estimated CDF.

27. The apparatus according to claim 23, wherein the circuitry is configured to read the storage values using the intermediate read thresholds from only a partial subset of the memory cells in the group.

28. The apparatus according to claim 23, wherein the circuitry is configured to estimate the first median and calculate the read threshold responsively to a failure to successfully retrieve the data.