MLC self-RAID flash data protection scheme
First Claim
1. A method of managing a multiple level cell flash memory that is organized logically into blocks each including a plurality of pages, each page including a plurality of sequentially numbered sectors, the method comprising:
- programming and erasing data on a page at a predetermined speed;
detecting an error rate for each page of a block and identifying a group of high error pages based on the error rates; and
applying a speed slower than the predetermined speed in programming and erasing data on the identified high error pages.
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Accused Products
Abstract
In a multiple level cell flash memory data storage device, a flash memory array has a plurality of blocks, where each block is an erase unit and has a plurality of pages, and a respective block includes a plurality of groups of pages. Each group of pages in the respective block includes an assigned parity page, and each page of the respective block has a plurality of sectors, including an assigned parity sector. The storage device is operable to program and erase data on a page at a predetermined speed, and detect an error rate for each page of a block and identify a group of high error pages based on the error rates. Further, the storage device is configured to apply a speed slower than the predetermined speed in programming and erasing data on the identified high error pages.
147 Citations
28 Claims
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1. A method of managing a multiple level cell flash memory that is organized logically into blocks each including a plurality of pages, each page including a plurality of sequentially numbered sectors, the method comprising:
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programming and erasing data on a page at a predetermined speed; detecting an error rate for each page of a block and identifying a group of high error pages based on the error rates; and applying a speed slower than the predetermined speed in programming and erasing data on the identified high error pages. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A multiple level cell flash memory data storage device, comprising:
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a flash memory array having a plurality of blocks, each block in the plurality of blocks comprising an erase unit and having a plurality of pages, a respective block including a plurality of groups of pages, each group of pages in the respective block including an assigned parity page; each page of the respective block having a plurality of sectors, including an assigned parity sector; wherein the device is operable to; program and erase data on a page at a predetermined speed; detect an error rate for each page of a block and identify a group of high error pages based on the error rates; and apply a speed slower than the predetermined speed in programming and erasing data on the identified high error pages. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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Specification