Process for etching trenches in an integrated optical device

• US 8,486,741 B2
• Filed: 05/25/2012
• Issued: 07/16/2013
• Est. Priority Date: 09/17/2004
• Status: Active Grant

• Current Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Inventors: Montanini, Pietro, Gelmi, Ilaria, Mottura, Marta, Germani, Giovanna
• Primary Examiner(s): Garber, Charles
• Assistant Examiner(s): POMPEY, RON EVERETT
• Application Number:
  US13/481,680
• Publication Number:
  US 20120228260A1
• Time in Patent Office: 417 Days
• Field of Search: 438/31, 438/700, 438/712, 438/713, 438/717, 438/945, 438/950, 257/E21.218, 257/E21.232, 216/64
• US Class Current: 438/31
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/0334 characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks

Abstract

The described process allows trenches to be etched in a structure comprising a support substrate and a multilayer, formed on the substrate, for the definition of wave guides of an integrated optical device and comprises a selective plasma attack in the multilayer through a masking structure that leaves uncovered areas of the multilayer corresponding to the trenches to be etched. Such a masking structure is obtained by forming a mask of metallic material on the multilayer that leaves uncovered the areas corresponding to the trenches to be etched and forming a mask of non-metallic material, for example photoresist, on it that leaves uncovered regions comprising at least part of the areas and an edge portion of the mask of metallic material.

Claims

1. Process for etching trenches in a structure comprising a support substrate and a multilayer, formed on the substrate, comprising a core layer and coating layers for the definition of wave guides of an integrated optical device, the process comprising:

Implementing a selective plasma attack in the multilayer through a masking structure that leaves uncovered areas of the multilayer corresponding to the trenches to be etched asymmetrically;

wherein the masking structure is obtained;

forming a mask of metallic material on the multilayer that leaves uncovered the areas corresponding to the trenches to be etched; and

forming a mask of non-metallic material that leaves uncovered regions comprising a portion of one edge of the mask of metallic material, wherein the one edge is on one of the sides of the areas corresponding to the trenches to be etched; and

that leaves covered regions comprising the opposite edge of the mask of metallic material and at least part of the areas corresponding to the trenches to be etched.

2. Process for etching trenches according to claim 1, wherein forming the mask of non-metallic material leaves uncovered regions comprising the areas corresponding to the trenches to be etched and an edge portion of the mask of metallic material.

3. Process for etching trenches according to claim 1, wherein the mask of metallic material leaves uncovered further areas of the multilayer not corresponding to the trenches to be etched.

4. Process for etching trenches according to claim 1, wherein formation of the mask of non-metallic material is preceded by operations for the formation of other structures of the integrated optical device.

5. Process for etching trenches according to claim 1, wherein the non-metallic material comprises a photoresist.

6. Process for etching trenches according to claim 1, wherein the attack comprises a low-density plasma attack.

7. Process for etching trenches according to claim 1, wherein the attack comprises a high-density plasma attack.

8. A method, comprising:

forming on a material a metallic first mask that exposes a region of the material;

forming on the first mask a second mask that exposes a section of the region and a portion of the first mask that is contiguous with the section of the region and that covers a section of the region and the first mask that is contiguous with the opposite section of the region; and

forming a trench in the exposed section of the material, the trench having a first trench wall that not parallel with a second trench wall.

9. The method of claim 8, further comprising:

forming on a substrate a first optical layer having a first index of refraction;

forming on the first layer a second optical layer having a second index of refraction; and

forming on the second layer a third optical layer having a third index of refraction, the first, second, and third layers composing the material.

10. The method of claim 8, further comprising removing the first and second masks after forming the trench.

11. The method of claim 8 wherein forming the first mask comprises forming the first mask only within predetermined distance from a perimeter of the region.

12. The method of claim 8 wherein forming the second mask comprises forming the second mask such that the second mask exposes the entire region of the material and exposes a portion of the first mask that is contiguous with multiple sides of the region.

13. The method of claim 8 wherein forming the second mask comprises forming the second mask such that the second mask exposes a section that is smaller than the entire region of the material and exposes only a portion of the first mask that is contiguous with fewer than all sides of the section.

14. The method of claim 8 wherein forming the second mask comprises forming the second mask such that the second mask exposes a section that is smaller than the entire region of the material and exposes only a portion of the first mask that is contiguous with a single side of the section.

15. The method of claim 8 wherein forming the trench comprises anisotropically etching the exposed section of the material.

16. The method of claim 8 wherein forming the trench comprises plasma etching the exposed section of the material.

17. The method of claim 8 wherein forming the second mask comprises forming the second mask from a non-metallic material.

18. A method, comprising:

forming a first mask on a material;

forming a second mask on the first mask such that a region of the material is exposed, the exposed region bounded on one side by the first mask and the exposed region bounded on a different side by the second mask; and

forming a trench in the exposed region of the material.

19. The method of claim 18, further comprising:

forming on a substrate a first optical layer having a first index of refraction;

forming on the first layer a second optical layer having a second index of refraction; and

forming on the second layer a third optical layer having a third index of refraction, the first, second, and third layers composing the material.

20. The method of claim 18 wherein the first mask is formed from a metallic material and the second mask is formed from a photoresist material.