Structure and process for electrical interconnect and thermal management

• US 8,486,765 B2
• Filed: 09/21/2011
• Issued: 07/16/2013
• Est. Priority Date: 08/28/2007
• Status: Active Grant

• Current Assignee: Micross Advanced Interconnect Technology LLC
• Original Assignee: Research Triangle Institute
• Inventors: Garrou, Philip, Williams, Charles Kenneth, Bower, Christopher A.
• Primary Examiner(s): Sandvik, Benjamin
• Assistant Examiner(s): Cruz, Leslie Pilar
• Application Number:
  US13/238,975
• Publication Number:
  US 20120048596A1
• Time in Patent Office: 664 Days
• Field of Search: 438/107, 438/109, 438/122, 257/713, 257/714, 257/715, 257/777, 257/625, 257/686, 257/712, 257/716, 257/717, 257/E23.097, 257/E23.098, 257/E23.099, 257/E23.102, 257/E21.705
• US Class Current: 438/122
• CPC Class Codes: H01L 2224/02372 connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05 of an individual bonding area
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13024 the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/14181 On opposite sides of the body
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/16146 the bump connector connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06589 Thermal management, e.g. cooling
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

A method for making a structure for thermal management of circuit devices. The method provides a first substrate and a second substrate where at least one of the first and second substrates includes a circuit element. The method forms in at least one of the first substrate and the second substrate an entrance through-hole extending through a thickness of the first substrate or the second substrate, forms in at least one of the first substrate and the second substrate an exit through-hole extending through a thickness of the first substrate or the second substrate, forms respective bonding elements on at least one of the first and second substrates, and bonds the first and second substrates at the respective bonding elements to form a seal between the first and second substrates and to form a first coolant channel in between the first and second substrates.

Claims

1. A method for making a structure for thermal management of circuit devices, comprising:

providing a first substrate and a second substrate, wherein at least one of the first and second substrates includes a circuit element;

forming in at least one of the first substrate and the second substrate an entrance through-hole extending through a thickness of the first substrate or the second substrate;

forming in at least one of the first substrate and the second substrate an exit through-hole extending through a thickness of the first substrate or the second substrate;

forming respective bonding elements on at least one of the first and second substrates; and

bonding the first and second substrates at the respective bonding elements to form a seal between the first and second substrates and to form a first coolant channel extending laterally between the first and second substrates and separating the first and second substrates principally by a thickness of the bonding elements.

2. The method of claim 1, wherein forming respective bonding elements comprises:

forming metallic bonding elements on the first and second substrates.

3. The method of claim 1, wherein at least one of forming the entrance through-hole and forming the exit through-hole comprises:

forming a metallic conduit for connection to the circuit element.

4. The method of claim 3, wherein at least one of forming the entrance through-hole and forming the exit through-hole comprises:

forming an electrical isolation region surrounding the metallic conduit.

5. The method of claim 3, wherein forming a metallic conduit comprises:

forming said metal conduit with a flange.

6. The method of claim 5, further comprising:

forming a metallic interconnect extending through said thickness of the first or the second substrate to form an electrical connection to the circuit element.

7. The method of claim 6, further comprising:

upon said bonding, connecting the flange to the metallic interconnect.

8. The method of claim 6, wherein forming a metallic interconnect comprises:

forming the metallic interconnect as a part of the entrance through-hole or the exit through-hole.

9. The method of claim 6, wherein forming a metallic interconnect comprises:

isolating the metallic interconnect from an interior of the through-hole using an electrical insulator.

10. The method of claim 1, wherein forming respective metallic bonding elements comprises:

forming an undulating path extending laterally between the first and second substrates for the first coolant channel between the first and second substrates.