Illumination apparatus

• US 8,487,315 B2
• Filed: 10/19/2011
• Issued: 07/16/2013
• Est. Priority Date: 04/12/2000
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kimura, Hajime, Satake, Rumo
• Primary Examiner(s): PRENTY, MARK V
• Application Number:
  US13/276,367
• Publication Number:
  US 20120037964A1
• Time in Patent Office: 636 Days
• Field of Search: 257/72, 257/59, 257/759
• US Class Current: 257/72
• CPC Class Codes: G02B 6/0028 Light guide, e.g. taper
• CPC Class Codes: G02B 6/0031 Reflecting element, sheet or layer
• CPC Class Codes: G02B 6/0038 Linear indentations or grooves, e.g. arc-shaped grooves or meandering grooves, extending over the full length or width of the light guide
• CPC Class Codes: G02B 6/0043 provided on the surface of the light guide
• CPC Class Codes: G02B 6/0046 Tapered light guide, e.g. wedge-shaped light guide
• CPC Class Codes: G02B 6/0055 Reflecting element, sheet or layer
• CPC Class Codes: G02F 1/1336 Illuminating devices
• CPC Class Codes: G02F 1/133615 Edge-illuminating devices, i.e. illuminating from the side
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785

Abstract

A point light source is converted into a plane light source having a satisfactory uniformity. The point light source is converted into a line light source by means of a linear light guiding plate, and further into the plane light source by means of a plane-like light guiding plate. Light from the point light source is reflected at a lamp reflector to be incident on at least two side surfaces of the plane-like light guiding plate.

Claims

1. A semiconductor device comprising:

a semiconductor film and a gate electrode with a gate insulating film interposed therebetween;

a source wiring;

an insulating film over the gate electrode and the source wiring; and

a gate wiring over the insulating film,

wherein a part of the gate wiring overlaps with a part of the semiconductor film.

2. A semiconductor device according to claim 1, wherein the source wiring is formed on a same surface as the gate electrode.

3. A semiconductor device according to claim 1, further comprising:

a conductive film over the insulating film,

wherein the gate wiring is formed on a same surface as the conductive film.

4. A semiconductor device according to claim 1, wherein the insulating film comprises an organic resin material.

5. A semiconductor device according to claim 1, wherein the gate electrode is formed over the semiconductor film.

6. A semiconductor device according to claim 1, wherein the semiconductor device is incorporated in at least one selected from the group consisting of a personal computer, a digital camera, a mobile telephone, a video camera, a mobile computer, a head mount display, a television, an electronic book, a player which use a recording medium, and a navigation system.

7. A semiconductor device comprising:

a semiconductor film and a gate electrode with a gate insulating film interposed therebetween;

a source wiring;

a conductive film electrically connected to the semiconductor film and the source wiring; and

a gate wiring electrically connected to the gate electrode,

wherein the source wiring and the gate electrode comprise a same material,

wherein the gate wiring and the conductive film comprise a same material, and

wherein a part of the gate wiring overlaps with a part of the semiconductor film.

8. A semiconductor device according to claim 7, wherein the source wiring is formed on a same surface as the gate electrode.

9. A semiconductor device according to claim 7, wherein the gate wiring is formed on a same surface as the conductive film.

10. A semiconductor device according to claim 7, further comprising an insulating film over the gate electrode and the source wiring,

wherein the insulating film comprises an organic resin material.

11. A semiconductor device according to claim 7, wherein the gate electrode is formed over the semiconductor film.

12. A semiconductor device according to claim 7, wherein the semiconductor device is incorporated in at least one selected from the group consisting of a personal computer, a digital camera, a mobile telephone, a video camera, a mobile computer, a head mount display, a television, an electronic book, a player which use a recording medium, and a navigation system.

13. A semiconductor device comprising:

a semiconductor film and a gate electrode with a gate insulating film interposed therebetween;

a source wiring;

an insulating film over the gate electrode and the source wiring; and

a gate wiring and a conductive film over the insulating film

wherein the conductive film is electrically connected to the semiconductor film and the source wiring,

wherein the source wiring and the gate electrode comprise a same material,

wherein the gate wiring and the conductive film comprise a same material, and

wherein a part of the gate wiring overlaps with a part of the semiconductor film.

14. A semiconductor device according to claim 13, wherein the source wiring is formed on a same surface as the gate electrode.

15. A semiconductor device according to claim 13, wherein the gate wiring is formed on a same surface as the conductive film.

16. A semiconductor device according to claim 13, wherein the insulating film comprises an organic resin material.

17. A semiconductor device according to claim 13, wherein the gate electrode is formed over the semiconductor film.

18. A semiconductor device according to claim 13, wherein the semiconductor device is incorporated in at least one selected from the group consisting of a personal computer, a digital camera, a mobile telephone, a video camera, a mobile computer, a head mount display, a television, an electronic book, a player which use a recording medium, and a navigation system.