Devices and methods for preventing capacitor leakage

• US 8,487,361 B2
• Filed: 04/02/2010
• Issued: 07/16/2013
• Est. Priority Date: 07/20/2005
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Tu, Kuo-Chi
• Primary Examiner(s): MONTALVO, EVA Y
• Application Number:
  US12/753,594
• Publication Number:
  US 20100187589A1
• Time in Patent Office: 1,201 Days
• Field of Search: 257/296, 257/298, 257/306
• US Class Current: 257/298
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H10B 12/0335 Making a connection between the transistor and the capacitor, e.g. plug

Abstract

Devices and methods for preventing capacitor leakage caused by sharp tip. The formation of sharp tip is avoided by a thicker bottom electrode which fully fills a micro-trench that induces formation of the sharp tip. Alternatively, formation of the sharp tip can be avoided by recessing the contact plug to substantially eliminate the micro-trench.

Claims

1. A semiconductor device, comprising:

a contact plug having a top flange protruding from a main portion of the contact plug, wherein a cross section of the top flange is narrower than a cross section of the main portion of contact plug; and

a capacitor landing on the contact plug with an overlay shift, comprising a bottom electrode on the contact plug, a capacitor dielectric on the bottom electrode, and a top electrode on the capacitor dielectric, with the top flange of the contact plug fitting against the capacitor,

wherein the capacitor is formed in a capacitor opening having a bottommost surface, and

wherein a portion of the bottommost surface of the capacitor opening that overlays a top recess of the contact plug is level with the rest of the bottommost surface of the capacitor opening that does not overlay the top recess of the contact plug.

2. The semiconductor device of claim 1, wherein the contact plug is formed over a source/drain region of a MOSFET transistor.

3. The semiconductor device of claim 1, wherein the contact plug is formed in a contact opening through a first insulating layer, and the capacitor opening is through a second insulating layer overlying the first insulating layer.

4. The semiconductor device of claim 3, further comprising a stop layer between the first insulating layer and the second insulting layer, and the capacitor opening is further formed through the stop layer.

5. The semiconductor device of claim 1, wherein the capacitor is cup-shaped.

6. The semiconductor device of claim 1, wherein the top flange of the contact plug fits against the bottom sidewall of the capacitor.

7. The semiconductor device of claim 1, wherein the bottommost surface of the capacitor opening has a continuous smooth bottom surface.