Device scheme of HKMG gate-last process
First Claim
1. An integrated circuit having metal gate stacks, comprising:
- a semiconductor substrate;
a first gate stack of an n-type field-effect transistor, the first gate stack including;
a high k dielectric layer on the semiconductor substrate;
a titanium nitride layer on the high k dielectric material layer;
a first metal layer on the titanium nitride layer, the first metal layer comprised of one of titanium nitride and tantalum nitride; and
a second metal layer on the first metal layer such that the second metal layer physically contacts the first metal layer; and
a second gate stack of a p-type FET, the second gate stack including;
the high k dielectric layer on the semiconductor substrate;
the titanium nitride layer on the high k dielectric material layer;
a third metal layer on the titanium nitride layer, wherein the third metal layer is different from the first and second metal layers; and
a fourth metal layer on the third metal layer,wherein the second metal layer comprises at least one of titanium aluminum and titanium aluminum nitride in physical contact with the first metal layer.
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Accused Products
Abstract
The present disclosure provides a method for making metal gate stacks of a semiconductor device. The method includes forming a high k dielectric material layer on a semiconductor substrate; forming a conductive material layer on the high k dielectric material layer; forming a dummy gate in a n-type field-effect transistor (nFET) region and a second dummy gate in a pFET region employing polysilicon; forming an inter-level dielectric (ILD) material on the semiconductor substrate; applying a first chemical mechanical polishing (CMP) process to the semiconductor substrate; removing the polysilicon from the first dummy gate, resulting in a first gate trench; forming a n-type metal to the first gate trench; applying a second CMP process to the semiconductor substrate; removing the polysilicon from the second dummy gate, resulting in a second gate trench; forming a p-type metal to the second gate trench; and applying a third CMP process to the semiconductor substrate.
19 Citations
20 Claims
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1. An integrated circuit having metal gate stacks, comprising:
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a semiconductor substrate; a first gate stack of an n-type field-effect transistor, the first gate stack including; a high k dielectric layer on the semiconductor substrate; a titanium nitride layer on the high k dielectric material layer; a first metal layer on the titanium nitride layer, the first metal layer comprised of one of titanium nitride and tantalum nitride; and a second metal layer on the first metal layer such that the second metal layer physically contacts the first metal layer; and a second gate stack of a p-type FET, the second gate stack including; the high k dielectric layer on the semiconductor substrate; the titanium nitride layer on the high k dielectric material layer; a third metal layer on the titanium nitride layer, wherein the third metal layer is different from the first and second metal layers; and a fourth metal layer on the third metal layer, wherein the second metal layer comprises at least one of titanium aluminum and titanium aluminum nitride in physical contact with the first metal layer. - View Dependent Claims (2, 3, 4, 5)
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6. An integrated circuit comprising:
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a semiconductor substrate; a first gate stack of an n-type field-effect transistor, the first gate stack including; a high k dielectric layer on the semiconductor substrate; a first metal layer disposed over the high k dielectric material layer; a second metal layer on the first metal layer, the second metal layer being different than the first metal layer; and a third metal layer on the second metal layer, the third metal layer being different than the second metal layer; and a second gate stack of a p-type FET, the second gate stack including; the high k dielectric layer on the semiconductor substrate; the first metal layer disposed over the high k dielectric material layer; a fourth metal layer on the first metal layer, the fourth metal layer being different than the first metal layer; and a fifth metal layer on the fourth metal layer, the fifth metal layer being different than the fourth metal layer, wherein one of the second, third, fourth, and fifth metal layers is a titanium aluminum layer. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13)
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14. An integrated circuit comprising:
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a semiconductor substrate; a first gate stack of an n-type field-effect transistor, the first gate stack including; a high k dielectric layer on the semiconductor substrate; a titanium nitride layer disposed on the high k dielectric material layer; a first metal layer on the titanium nitride layer, the first metal layer being different than the titanium nitride layer; a second metal layer on the first metal layer, the second metal layer being different than the first metal layer; and wherein at least one of the first and second metal layers is a titanium aluminum layer, and a second gate stack of a p-type FET, the second gate stack including; the high k dielectric layer on the semiconductor substrate; the titanium nitride layer on the high k dielectric material layer; a third metal layer disposed over the titanium nitride layer; and a fourth metal layer on the third metal layer, the fourth metal layer being different than the third metal layer. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification