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Through-silicon vias for semicondcutor substrate and method of manufacture

  • US 8,487,410 B2
  • Filed: 04/13/2011
  • Issued: 07/16/2013
  • Est. Priority Date: 04/13/2011
  • Status: Active Grant
First Claim
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1. A semiconductor component comprising:

  • a semiconductor substrate having a top surface;

    an opening having an interior surface extending from the top surface into the semiconductor substrate, wherein the opening has a top portion and a bottom portion;

    a first dielectric liner disposed on the interior surface of the opening, the first dielectric liner having a thickness T1 on the top portion and a thickness T2 on the bottom portion, wherein R1 is a ratio of T1 to T2;

    a second dielectric liner disposed on the first dielectric liner, the second dielectric liner having a thickness T3 on the top portion and a thickness T4 on the bottom portion, wherein R2 is a ratio of T3 to T4, and R1 is greater than R2;

    a third dielectric liner disposed on the second dielectric liner, the third dielectric liner having a thickness T5 on the top portion and a thickness T6 on the bottom portion, wherein T5 is greater than T6;

    a metal barrier layer disposed on the third dielectric liner; and

    a conductive material disposed on the metal barrier layer and filling the opening.

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