Passivation film for electronic device and method of manufacturing the same

• US 8,487,413 B2
• Filed: 06/09/2011
• Issued: 07/16/2013
• Est. Priority Date: 10/25/2010
• Status: Expired due to Fees

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Kim, Yong-Tak, Cho, Yoon-Hyeung, Oh, Min-Ho, Lee, Byoung-Duk, Lee, So-Young, Song, Seung-Yong, Lee, Jong-Hyuk
• Primary Examiner(s): DANG, PHUC T
• Application Number:
  US13/157,083
• Publication Number:
  US 20120098108A1
• Time in Patent Office: 768 Days
• Field of Search: 257/640, 257/E29.006, 257/E21.293, 438/761
• US Class Current: 257/640
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/3105 After-treatment

Abstract

Disclosed are a passivation film for an electronic device having a nitride film formed on a substrate by a plasma-enhanced chemical vapor deposition (PECVD) method using a silicon-containing gas and a nitrogen-containing gas and a plasma-processed film formed by plasma processing a surface of the nitride film by a PECVD method using an NH₃ gas, an N₂ gas, and a H₂ gas, and a method of manufacturing the passivation film.

Claims

1. A passivation film for an electronic device comprising:

a nitride film formed on a substrate by using a silicon-containing gas and a nitrogen-containing gas, wherein the nitride film has a thickness in a range from about 0.5 to about 1.5 μ

m; and

a plasma-processed film formed by plasma processing a surface of the nitride film using an NH₃ gas, an N₂ gas, and a H₂ gas.

2. The passivation film of claim 1, wherein the nitride film comprises at least one of a silicon nitride film and a silicon carbon nitride film.

3. The passivation film of claim 1, wherein a Si—

H bond peak in the plasma-processed film in a 2,200 nm region is reduced.

4. The passivation film of claim 1, wherein the tensile stress characteristic of the passivation film is increased by the plasma processing.

5. The passivation film of claim 1, wherein the passivation film has a refractive index of about 70% or more in a visible light region.

6. The passivation film of claim 1, wherein the plasma-processed film has a thickness in a range from about 0.02 to about 0.8 μ

m.

7. A passivation film for an electronic device comprising:

a nitride film formed on a substrate by using a silicon-containing gas and a nitrogen-containing gas, wherein the nitride film comprises a first nitride film; and

a plasma-processed film formed by plasma processing a surface of the nitride film using an NH₃ gas, an N₂ gas, and a H₂ gas, wherein the plasma-processed film comprises a first plasma-processed film, and a second nitride film formed by plasma processing a surface of the first plasma-processed film using a silicon-containing gas and a nitrogen-containing gas.

8. The passivation film of claim 7, further comprising a second plasma-processed film formed by plasma processing a surface of the second nitride film using an NH₃ gas, an N₂ gas, and a H₂ gas and a third nitride film formed by plasma processing a surface of the second plasma-processed film using a silicon-containing gas and a nitrogen-containing gas.

9. A method of manufacturing a passivation film for an electronic device, the method comprising:

forming a nitride film on a substrate by a plasma-enhanced chemical vapor deposition (PECVD) method using a silicon-containing gas and a nitrogen-containing gas, wherein the nitride film has a thickness in a range from about 0.5 to about 1.5 μ

m; and

plasma processing a surface of the nitride film by a PECVD method using an NH₃ gas, an N₂ gas, and a H₂ gas.

10. The method of claim 9, wherein the nitride film comprises at least one of a silicon nitride film and a silicon carbon nitride film.

11. The method of claim 9, wherein the silicon-containing gas in the forming of the nitride film is a SiH₄ gas.

12. The method of claim 9, wherein the plasma processing is performed under a pressure condition in a range from about 0.1 to about 10 torr.

13. The method of claim 9, wherein the plasma processing is performed with a radio frequency (RF) power in a range from about 50 to about 1,000 W.

14. The method of claim 9, wherein the plasma processing is performed at a temperature of the substrate in a range from about 50 to about 200°

C.

15. A method of manufacturing passivation film for an electronic device, the method comprising:

forming a nitride film on a substrate by a plasma-enhanced chemical vapor deposition (PECVD) method using a silicon-containing gas and a nitrogen-containing gas;

plasma processing a surface of the nitride film by a PECVD method using an NH₃ gas, an N₂ gas, and a H₂ gas; and

forming a second nitride film on a first plasma-processed film by a PECVD method using a silicon-containing gas and a nitrogen-containing gas.

16. The method of claim 15, further comprising:

forming a second plasma-processed film by plasma processing a surface of the second nitride film by a PECVD method using an NH₃ gas, an N₂ gas, and a H₂ gas; and

forming a third nitride film on the second plasma-processed film by plasma processing a surface of the second plasma-processed film by a PECVD method using a silicon-containing gas and a nitrogen-containing gas.