Particle detection sensor, method for manufacturing particle detection sensor, and method for detecting particle using particle detection sensor

• US 8,492,172 B2
• Filed: 10/30/2009
• Issued: 07/23/2013
• Est. Priority Date: 08/26/2005
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamaguchi, Mayumi, Izumi, Konami, Tateishi, Fuminori
• Primary Examiner(s): Lee, Hsien Ming
• Application Number:
  US12/609,328
• Publication Number:
  US 20100141278A1
• Time in Patent Office: 1,362 Days
• Field of Search: 438/5, 438/6, 438/14, 438 48- 50, 257/252, 257/253, 257/414, 257/416, 324/691, 324/693, 324/696, 250/282, 250/288
• US Class Current: 438/5
• CPC Class Codes: G01N 15/1023 Microstructural devices for non-optical measurement
• CPC Class Codes: G01N 15/1031 by measuring electrical or magnetic effects

Abstract

A compact sensor with which particles floating in the air can be easily detected. A sensor having a microstructure which detects a detection object by contact is used. A microstructure has an opening to be a detection hole corresponding to the size of a detection object, and a pair of electrodes having a bridge structure are provided thereabove or thereunder so as to partially contact with each other.

Claims

1. A method for manufacturing a semiconductor device, comprising:

forming an insulating layer;

forming a first electrode over the insulating layer;

forming a second electrode over the insulating layer so as to overlap with a part of the first electrode without interposing an insulator between the first electrode and the second electrode; and

forming an opening in a part of the insulating layer which is under a region where the first electrode and the second electrode partly overlap,

wherein both the first electrode and the second electrode are formed on and in contact with a top surface of the insulating layer.

2. A method for manufacturing a semiconductor device according to claim 1, wherein the opening is formed by dry etching or wet etching.

3. A method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is a particle detection sensor.

4. A method for manufacturing a semiconductor device, comprising:

forming a semiconductor layer in a first region;

forming an insulating layer in the first region and a second region;

forming a first electrode in the second region over the insulating layer;

forming a second electrode so as to overlap with a part of the first electrode; and

forming an opening in a part of the insulating layer which is under a region where the first electrode and the second electrode overlap,

wherein both the first electrode and the second electrode are formed on and in contact with a top surface of the insulating layer.

5. A method for manufacturing a semiconductor device according to claim 4, wherein the opening is formed by dry etching or wet etching.

6. A method for manufacturing a semiconductor device according to claim 4, wherein the semiconductor device is a particle detection sensor.

7. A method for manufacturing a semiconductor device, comprising:

forming an insulating layer;

forming a first electrode over the insulating layer;

forming a sacrificial layer over the first electrode;

forming a second electrode over the sacrificial layer so as to overlap with a part of the first electrode;

forming an opening in a part of the insulating layer which is under a region where the first electrode and the second electrode overlap; and

removing the sacrificial layer,

wherein both the first electrode and the second electrode are formed on and in contact with a top surface of the insulating layer.

8. A method for manufacturing a semiconductor device according to claim 7, wherein the sacrificial layer is removed by dry etching or wet etching.

9. A method for manufacturing a semiconductor device according to claim 7, wherein the opening is formed by dry etching or wet etching.

10. A method for manufacturing a semiconductor device according to claim 7, wherein the semiconductor device is a particle detection sensor.

11. A method for manufacturing a semiconductor device, comprising:

forming an insulating layer;

forming a first electrode over the insulating layer;

forming a sacrificial layer over the first electrode;

forming a second electrode over the sacrificial layer so as to overlap with a part of the first electrode;

forming an opening in a part of the insulating layer which is under a region where the first electrode and the second electrode overlap; and

removing the sacrificial layer thereby contacting the first electrode and the second electrode,

wherein both the first electrode and the second electrode are formed on and in contact with a top surface of the insulating layer.

12. A method for manufacturing a semiconductor device according to claim 11, wherein the sacrificial layer is removed by dry etching or wet etching.

13. A method for manufacturing a semiconductor device according to claim 11, wherein the opening is formed by dry etching or wet etching.

14. A method for manufacturing a semiconductor device according to claim 11, wherein the semiconductor device is a particle detection sensor.

15. A method for manufacturing a semiconductor device, comprising:

forming a semiconductor layer in a first region;

forming a conductive layer in the first region and a second region;

processing the conductive layer thereby forming a gate electrode in the first region and forming a first sacrificial layer in the second region;

forming an insulating layer so as to cover the gate electrode and the first sacrificial layer;

forming a first electrode over the insulating layer;

forming a second sacrificial layer over the first electrode;

forming a second electrode over the second sacrificial layer so as to overlap with a part of the first electrode;

forming an opening in a part of the insulating layer which is under a region where the first electrode and the second electrode overlap;

removing the second sacrificial layer thereby contacting the first electrode and the second electrode; and

removing the first sacrificial layer.

16. A method for manufacturing a semiconductor device according to claim 15, wherein the semiconductor device is a particle detection sensor.

17. A method for manufacturing a semiconductor device, comprising:

forming a semiconductor layer in a first region;

forming a conductive layer in the first region and a second region;

processing the conductive layer thereby forming a gate electrode in the first region and forming a first sacrificial layer in the second region;

forming an insulating layer so as to cover the gate electrode and the first sacrificial layer;

forming a first electrode over the insulating layer;

forming a second sacrificial layer over the first electrode;

forming a second electrode over the second sacrificial layer so as to overlap with a part of the first electrode;

forming an opening in a part of the insulating layer which is under a region where the first electrode and the second electrode overlap;

removing the second sacrificial layer thereby contacting the first electrode and the second electrode; and

removing the first sacrificial layer thereby forming a connection hole.

18. A method for manufacturing a semiconductor device according to claim 17, wherein the semiconductor device is a particle detection sensor.

19. A method for manufacturing a semiconductor device, comprising:

forming an insulating layer;

forming a first electrode over the insulating layer;

forming a second electrode over the insulating layer so as to overlap with a part of the first electrode without interposing an insulator between the first electrode and the second electrode; and

forming an opening in a part of the insulating layer which is under a region where the first electrode and the second electrode partly overlap,

wherein both the first electrode and the second electrode are formed on and in contact with a top surface of the insulating layer, and

wherein the first electrode and the second electrode are not in contact with each other.

20. A method for manufacturing a semiconductor device, comprising:

forming an insulating layer;

forming a first electrode over the insulating layer;

forming a second electrode over the insulating layer so as to overlap with a part of the first electrode without interposing an insulator between the first electrode and the second electrode; and

forming an opening in a part of the insulating layer which is under a region where the first electrode and the second electrode partly overlap,

wherein both the first electrode and the second electrode are formed on and in contact with a top surface of the insulating layer, and

wherein the first electrode and the second electrode are in contact with each other.