Methods for making thin layers of crystalline materials

• US 8,492,245 B1
• Filed: 02/07/2012
• Issued: 07/23/2013
• Est. Priority Date: 02/07/2012
• Status: Active Grant

• Current Assignee: Wisconsin Alumni Research Foundation (University of Wisconsin System)
• Original Assignee: Wisconsin Alumni Research Foundation (University of Wisconsin System)
• Inventors: Lagally, Max G., Paskiewicz, Deborah M., Tanto, Boy
• Primary Examiner(s): Maldonado, Julio J
• Assistant Examiner(s): GALVIN III, JOSEPH M
• Application Number:
  US13/367,600
• Publication Number:
  US 20130203236A1
• Time in Patent Office: 532 Days
• Field of Search: None
• US Class Current: 438/458
• CPC Class Codes: C30B 29/16 Oxides
• CPC Class Codes: C30B 29/52 Alloys
• CPC Class Codes: C30B 33/08 Etching
• CPC Class Codes: H01L 21/02439 Materials
• CPC Class Codes: H01L 21/0245 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02521 Materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304

Abstract

Methods for making growth templates for the epitaxial growth of compound semiconductors and other materials are provided. The growth templates are thin layers of single-crystalline materials that are themselves grown epitaxially on a substrate that includes a thin layer of sacrificial material. The thin layer of sacrificial material, which creates a coherent strain in the single-crystalline material as it is grown thereon, includes one or more suspended sections and one or more supported sections.

Claims

1. A method for fabricating a layer of strain-relaxed, single-crystalline material, the method comprising:

growing a layer of coherently strained single-crystalline material over a layer of sacrificial material, the layer of sacrificial material comprising one or more suspended sections and one or more supported sections, wherein the strain in the portions of single-crystalline material grown over the one or more suspended sections is lower than the strain in the portions of single-crystalline material grown over the one or more supported sections;

selectively removing the one or more suspended sections of the layer of sacrificial material, such that the portions of the single-crystalline material previously disposed over the one or more suspended sections are elastically relaxed; and

detaching the one or more elastically relaxed portions of the layer of single-crystalline material from the remainder of the layer of single-crystalline material.

2. The method of claim 1, wherein the one or more suspended sections in the layer of sacrificial material are formed over apertures in a base substrate underlying the layer of sacrificial material.

3. The method of claim 2, wherein the layer of coherently strained single-crystalline material is grown on a silicon-on-insulator substrate comprising a layer of single-crystalline Si disposed over a buried oxide layer supported on a handle wafer, and further wherein the layer of single-crystalline Si is the sacrificial layer and the buried oxide layer and the handle wafer together form the base substrate.

4. The method of claim 2, wherein the layer of coherently strained, single-crystalline material has a thickness in the range from 10 nm to 3 nm, the layer of sacrificial material has a thickness in the range from 10 nm to 3 μ

m and the base substrate has a thickness of at least 100 nm.

5. The method of claim 1, wherein the coherently strained single-crystalline material is grown to a thickness greater than the critical thickness for plastic relaxation for the single-crystalline material grown on a substrate of bulk sacrificial material.

6. The method of claim 5, wherein the detached portions of the layer of single-crystalline material are free of misfit dislocations.

7. The method of claim 1, wherein the layer of sacrificial material has a plurality of suspended sections and the layer of single-crystalline material is grown as a continuous layer over the plurality of suspended sections.

8. The method of claim 7, wherein the plurality of suspended sections of the layer of sacrificial material is formed over apertures in a base substrate underlying the layer of sacrificial material.

9. The method of claim 1, further comprising bonding the one or more detached portions of the single-crystalline material to a bonding substrate.

10. The method of claim 1, wherein detaching the one or more elastically relaxed portions of the layer of single-crystalline material from the remainder of the layer of single-crystalline material comprises:

contacting a surface of the one or more elastically relaxed portions of the single-crystalline material with a bonding substrate;

applying a pressure to an opposite surface of the one or more elastically relaxed portions of the layer of single-crystalline material to maintain the contact between the one or more elastically relaxed portions of the layer of single-crystalline material and the bonding substrate; and

pulling the remainder of the layer of single-crystalline material away from the bonding substrate, such that the elastically relaxed portions of the layer of single-crystalline material detach from the remainder of the layer of single-crystalline material.

11. The method of claim 10, wherein the surface of the bonding substrate is coated with a liquid, the method further comprising evaporating the liquid coating from the surface of the bonding substrate.

12. The method of claim 1, further comprising growing an additional layer of single-crystalline material on the one or more elastically relaxed, detached portions.

13. The method of claim 12, wherein the additional layer of single-crystalline material has the same material composition as the material of the detached portions.

14. The method of claim 12, wherein the additional layer of single-crystalline material has a different material composition than the material of the detached portions.

15. The method of claim 1, wherein the single-crystalline material is a single-crystalline semiconductor alloy.

16. The method of claim 15, wherein the semiconductor alloy is Si_1-xGe_x and x is at least 0.2.

17. The method of claim 1, wherein the single-crystalline material is a transition metal oxide.

18. The method of claim 1, wherein the layer of coherently strained, single-crystalline material has a thickness in the range from 10 nm to 3 μ

m and the layer of sacrificial material has a thickness in the range from 10 nm to 3 nm.