Method of forming E-fuse in replacement metal gate manufacturing process
First Claim
1. A method of forming an electronic fuse comprising:
- forming a polysilicon structure on top of a semiconductor substrate;
implanting at least one dopant into said polysilicon structure to create a doped polysilicon layer in at least a top portion of said polysilicon structure;
subjecting said doped polysilicon layer to a reactive-ion-etching (RIE) process, said doped polysilicon layer being substantially unaffected by said RIE process; and
converting said polysilicon structure including said doped polysilicon layer into a silicide to form said electronic fuse,wherein subjecting said doped polysilicon layer to said RIE process further comprises removing a cap layer on top of a sacrificial gate electrode of a transistor, wherein said transistor is formed on said semiconductor substrate thereupon said polysilicon structure is formed and wherein said removing removes, at most, a fraction of said doped polysilicon layer with rest of said doped polysilicon layer covering rest of said polysilicon structure, and subsequently applying said RIE process in removing selectively said sacrificial gate electrode of said transistor.
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Abstract
Embodiment of the present invention provides a method of forming electronic fuse or commonly known as e-fuse. The method includes forming a polysilicon structure and a field-effect-transistor (FET) structure together on top of a common semiconductor substrate, the FET structure having a sacrificial gate electrode; implanting at least one dopant into the polysilicon structure to create a doped polysilicon layer in at least a top portion of the polysilicon structure; subjecting the polysilicon structure and the FET structure to a reactive-ion-etching (RIE) process, the RIE process selectively removing the sacrificial gate electrode of the FET structure while the doped polysilicon layer being substantially unaffected by the RIE process; and converting the polysilicon structure including the doped polysilicon layer into a silicide to form the electronic fuse.
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Citations
16 Claims
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1. A method of forming an electronic fuse comprising:
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forming a polysilicon structure on top of a semiconductor substrate; implanting at least one dopant into said polysilicon structure to create a doped polysilicon layer in at least a top portion of said polysilicon structure; subjecting said doped polysilicon layer to a reactive-ion-etching (RIE) process, said doped polysilicon layer being substantially unaffected by said RIE process; and converting said polysilicon structure including said doped polysilicon layer into a silicide to form said electronic fuse, wherein subjecting said doped polysilicon layer to said RIE process further comprises removing a cap layer on top of a sacrificial gate electrode of a transistor, wherein said transistor is formed on said semiconductor substrate thereupon said polysilicon structure is formed and wherein said removing removes, at most, a fraction of said doped polysilicon layer with rest of said doped polysilicon layer covering rest of said polysilicon structure, and subsequently applying said RIE process in removing selectively said sacrificial gate electrode of said transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method comprising:
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forming a polysilicon structure and a field-effect-transistor (FET) structure together on top of a common semiconductor substrate, said FET structure having a sacrificial gate electrode; implanting at least one dopant into said polysilicon structure to create a doped polysilicon layer in at least a top portion of said polysilicon structure; subjecting said polysilicon structure and said FET structure to a reactive-ion-etching (RIE) process, said RIE process selectively removing said sacrificial gate electrode of said FET structure while said doped polysilicon layer being substantially unaffected by said RIE process; and converting said polysilicon structure including said doped polysilicon layer into a silicide to form said electronic fuse, wherein converting said polysilicon structure into said silicide further comprises; forming a hard mask pattern, said hard mask pattern covering said FET structure but exposing said doped polysilicon layer and said polysilicon structure underneath; depositing a metal layer in direct contact with said doped polysilicon layer; and causing diffusion, through a rapid thermal annealing process, of said metal layer into at least said doped polysilicon layer to create said silicide. - View Dependent Claims (10, 11, 12, 13)
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14. A method comprising:
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forming an electronic fuse (e-fuse) structure and a field-effect-transistor (FET) structure on top of a semiconductor substrate, said e-fuse structure including a polysilicon layer and said FET structure having a sacrificial gate electrode; implanting a boron (B) dopant into said polysilicon layer of said e-fuse structure to create a doped polysilicon layer in at least a top portion thereof; removing a cap layer on top of said sacrificial gate electrode of said FET structure, wherein said removing also removes a fraction of said doped polysilicon layer with rest of said doped polysilicon layer covering rest of said e-fuse structure; subjecting said e-fuse structure and said FET structure to a common reactive-ion-etching (RIE) process, said RIE process selectively removing said sacrificial gate electrode of said FET structure while causing no substantial changes to said e-fuse structure; and performing silicidation of said doped polysilicon layer to convert said e-fuse structure into an e-fuse. - View Dependent Claims (15, 16)
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Specification