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Semiconductor device and method for manufacturing the same

  • US 8,492,757 B2
  • Filed: 03/04/2010
  • Issued: 07/23/2013
  • Est. Priority Date: 03/06/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode layer over a substrate having an insulating surface;

    a gate insulating layer over the gate electrode layer;

    an oxide semiconductor layer including a channel formation region over the gate insulating layer;

    a buffer layer over the oxide semiconductor layer; and

    source and drain electrode layers over the buffer layer,wherein the buffer layer includes a first region which is in contact with one of the source and drain electrode layers,wherein the buffer layer includes a second region which is in contact with the channel formation region,wherein the first region has higher electrical conductivity than the channel formation region, andwherein the second region has lower electrical conductivity than the channel formation region.

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