Light-emitting device and manufacturing method thereof

• US 8,492,764 B2
• Filed: 08/02/2010
• Issued: 07/23/2013
• Est. Priority Date: 08/07/2009
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Sakakura, Masayuki, Sakata, Junichiro, Tsubuku, Masashi, Akimoto, Kengo, Hosoba, Miyuki, Oikawa, Yoshiaki
• Primary Examiner(s): Reames, Matthew
• Assistant Examiner(s): LIU, BENJAMIN T
• Application Number:
  US12/848,375
• Publication Number:
  US 20110031496A1
• Time in Patent Office: 1,086 Days
• Field of Search: 257/59, 257/43, 257/13, 257/E29.117, 257/E29.296, 257/E33.001, 438/104, 438/22
• US Class Current: 257/59
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H10K 2102/3031 Two-side emission, e.g. transparent OLEDs [TOLED]
• CPC Class Codes: H10K 50/19 Tandem OLEDs
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]

Abstract

A light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors in accordance with characteristics of the plural kinds of circuits are included. An inverted-coplanar thin film transistor including an oxide semiconductor layer which overlaps a source and drain electrode layers is used as a thin film transistor for a pixel, a channel-stop thin film transistor is used as a thin film transistor for a driver circuit, and a color filter layer is provided between the thin film transistor for a pixel and a light-emitting element so as to overlap the light-emitting element which is electrically connected to the thin film transistor for a pixel.

Claims

1. A light-emitting device comprising:

a pixel portion over a substrate, and comprising;

a first thin film transistor comprising;

a first gate electrode layer over the substrate;

a first gate insulating layer over the first gate electrode layer;

a first source electrode layer and a first drain electrode layer over the first gate insulating layer; and

a first oxide semiconductor layer over the first gate insulating layer, and overlapping with the first source electrode layer and the first drain electrode layer;

a first oxide insulating layer which is in contact with the first oxide semiconductor layer;

a connection electrode layer over the first oxide insulating layer, and electrically connected to the first drain electrode layer;

a color filter layer over the first oxide insulating layer;

a first electrode over the color filter layer, and electrically connected to the connection electrode layer;

a light-emitting layer over the first electrode; and

a second electrode over the light-emitting layer;

a driver circuit over the substrate, and comprising;

a second thin film transistor comprising;

a second gate electrode layer over the substrate;

a second gate insulating layer over the second gate electrode layer;

a second oxide semiconductor layer over the second gate insulating layer;

a second oxide insulating layer over the second oxide semiconductor layer;

a second source electrode layer and a second drain electrode layer on and in contact with the second oxide semiconductor layer; and

an insulating layer over the second oxide insulating layer, the second source electrode layer and the second drain electrode layer and in contact with the second oxide semiconductor layer,

wherein the second oxide insulating layer includes a first region and a second region,

wherein the first region is in contact with the second oxide semiconductor layer so as to overlap with the second gate electrode layer,

wherein the second region is in contact with the second oxide semiconductor layer so as to cover an end portion of the second oxide semiconductor layer,

wherein the second region is sandwiched between the second oxide semiconductor layer and one of the second source electrode layer and the second drain electrode layer, and

wherein the first gate electrode layer, the first gate insulating layer, the first oxide semiconductor layer, the first source electrode layer, the first drain electrode layer, the first oxide insulating layer, and the first electrode have a light-transmitting property.

2. The light-emitting device according to claim 1, wherein a material of the second source electrode layer and the second drain electrode layer is different from a material of the first source electrode layer and the first drain electrode layer, and wherein a resistance of the material of the second source electrode layer and the second drain electrode layer is lower than a resistance of the material of the first source electrode layer and the first drain electrode layer.

3. The light-emitting device according to claim 1, wherein the connection electrode layer is formed using a film including an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W as its main component or a stacked-layer film including the film and an alloy film of any of the elements.

4. The light-emitting device according to claim 1, wherein the second source electrode layer and the second drain electrode layer are the same materials as the connection electrode layer.

5. The light-emitting device according to claim 1, wherein the first source electrode layer and the first drain electrode layer are indium oxide, an alloy of indium oxide and tin oxide, an alloy of indium oxide and zinc oxide, or zinc oxide.

6. The light-emitting device according to claim 1, wherein the first oxide insulating layer and the second oxide insulating layer are a silicon oxide film or an aluminum oxide film formed by a sputtering method.

7. The light-emitting device according to claim 1, wherein the second thin film transistor includes an oxide conductive layer between the second oxide semiconductor layer and the second source electrode layer and an oxide conductive layer between the second oxide semiconductor layer and the second drain electrode layer.

8. A method for manufacturing a light-emitting device, comprising the steps of:

forming a first gate electrode layer and a second gate electrode layer;

forming a gate insulating layer over the first gate electrode layer and the second gate electrode layer;

forming a first source electrode layer and a first drain electrode layer over the gate insulating layer so as to overlap the first gate electrode layer;

forming over the gate insulating layer, a first oxide semiconductor layer so as to overlap the first gate electrode layer, a part of the first source electrode layer, and a part of the first drain electrode layer, and a second oxide semiconductor layer so as to overlap the second gate electrode layer;

forming an oxide insulating layer over the second oxide semiconductor layer;

forming a second source electrode layer and a second drain electrode layer over the second oxide semiconductor layer, and forming a connection electrode layer over the oxide insulating layer so as to be electrically connected to the first drain electrode layer;

forming an insulating layer over the oxide insulating layer, the second source electrode layer and the second drain electrode layer and in contact with the second oxide semiconductor layer;

forming a color filter layer over the oxide insulating layer which overlaps with the first oxide semiconductor layer; and

forming over the color filter layer, a first electrode which is electrically connected to the connection electrode layer, a light-emitting layer, and a second electrode,

wherein the oxide insulating layer includes a first region and a second region,

wherein the first region is in contact with the second oxide semiconductor layer so as to overlap with the second gate electrode layer,

wherein the second region is in contact with the second oxide semiconductor layer so as to cover an end portion of the second oxide semiconductor layer, and

wherein the second region is sandwiched between the second oxide semiconductor layer and one of the second source electrode layer and the second drain electrode layer.