Light-emitting device and manufacturing method thereof

• US 8,492,780 B2
• Filed: 02/11/2010
• Issued: 07/23/2013
• Est. Priority Date: 02/11/2009
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Chuang, Chia-Ming, Ou, Chen, Hsu, Chen Ke, Su, Win Jim
• Primary Examiner(s): Lee, Jae
• Assistant Examiner(s): WITHERS, GRANT S
• Application Number:
  US12/703,964
• Publication Number:
  US 20100200885A1
• Time in Patent Office: 1,258 Days
• Field of Search: 257/98
• US Class Current: 257/98
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A light emitting device and a method of fabricating thereof are provided. The method of fabricating the light emitting device comprises: providing a substrate having a first major surface and a second major surface; forming a plurality of light-emitting stacks on the first major surface; forming an etching protection layer on each of the light emitting stacks; forming a plurality of holes by a discontinuous laser beam on the substrate; etching the plurality of holes; and slicing off the substrate along the plurality of holes to form a light emitting device. The light emitting device has a substrate wherein the sidewall of the substrate comprising a first area with a substantially flat surface and a second area with substantially textured surface.

Claims

1. A light emitting device comprising:

a substrate, wherein the substrate comprises a first major surface, a second major surface, and a sidewall; and

a light emitting stack layer formed on the first major surface of the substrate, comprising a first conductive-type semiconductor layer, an active layer and a second conductive-type semiconductor layer;

wherein the sidewall of the substrate comprises a first area and a second area;

wherein the morphology of the first area is substantially flat and the morphology of the second area is substantially textured.

2. The light emitting device of claim 1, wherein the second area is a convex-concave structure.

3. The light emitting device of claim 2, wherein an extension direction of the convex-concave structure is longitudinal.

4. The light emitting device of claim 2, wherein the extension direction of the convex-concave structure comprises a direction originating from the first major surface and extending toward the second major surface, a direction originating from the first major surface and extending away from the first major surface, and/or a direction originating from the second major surface and extending away from the second major surface.

5. The light emitting device of claim 2, wherein the extension direction of the convex-concave structure is substantially parallel to the normal line of the first major surface or that of the second major surface of the substrate.

6. The light emitting device of claim 1, wherein the first area is formed on the sidewall of the substrate and located close to the first major surface or the second major surface.

7. The light emitting device of claim 1, wherein the second area is formed on the sidewall of the substrate;

wherein the second area is sandwiched by two of the first areas.