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Reduced process sensitivity of electrode-semiconductor rectifiers

  • US 8,492,837 B2
  • Filed: 10/27/2011
  • Issued: 07/23/2013
  • Est. Priority Date: 06/12/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor layer;

    a trench disposed in the semiconductor layer;

    a first electrode disposed in the trench;

    a mesa region adjacent to the trench and being defined, at least in part, by the trench, the mesa region having a top surface and a graded region, the graded region having a doping concentration decreasing with increasing depth from the top surface of the mesa region, the doping concentration of the graded region being highest at the top surface of the mesa region, the first electrode having at least a portion electrically insulated from the mesa region; and

    a second electrode disposed on the top surface of the mesa region, the second electrode being a first portion of a Schottky contact, the top surface of the mesa region being a second portion of the Schottky contact.

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