Stress-generating shallow trench isolation structure having dual composition
First Claim
1. A semiconductor structure comprising:
- an active area comprising a semiconductor material and located in a semiconductor substrate;
a first shallow trench isolation portion laterally abutting lengthwise sidewalls of a only middle portion of said active area; and
a set of two second shallow trench isolation portions, each laterally abutting remaining lengthwise sidewalls of said active area as well as widthwise sidewalls of end portions of said active area, wherein said first shallow trench isolation portion and said set of two second shallow trench isolation portions comprise different materials, and wherein one of said set of two second shallow trench isolation portions is in direct contact with a first sidewall of said first shallow trench isolation portion and another of said set of two second shallow trench isolation portions is in direct contact with a second sidewall of said first shallow trench isolation portion, said second sidewall of said first shallow trench isolation portion is opposite of said first sidewall of said first shallow trench isolation portion.
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Accused Products
Abstract
A shallow trench isolation structure containing a first shallow trench isolation portion comprising the first shallow trench material and a second shallow trench isolation portion comprising the second shallow trench material is provided. A first biaxial stress on at least one first active area and a second bidirectional stress on at least one second active area are manipulated separately to enhance charge carrier mobility in middle portions of the at least one first and second active areas by selection of the first and second shallow trench materials as well as adjusting the type of the shallow trench isolation material that each portion of the at least one first active area and the at least one second active area laterally abut.
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Citations
13 Claims
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1. A semiconductor structure comprising:
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an active area comprising a semiconductor material and located in a semiconductor substrate; a first shallow trench isolation portion laterally abutting lengthwise sidewalls of a only middle portion of said active area; and a set of two second shallow trench isolation portions, each laterally abutting remaining lengthwise sidewalls of said active area as well as widthwise sidewalls of end portions of said active area, wherein said first shallow trench isolation portion and said set of two second shallow trench isolation portions comprise different materials, and wherein one of said set of two second shallow trench isolation portions is in direct contact with a first sidewall of said first shallow trench isolation portion and another of said set of two second shallow trench isolation portions is in direct contact with a second sidewall of said first shallow trench isolation portion, said second sidewall of said first shallow trench isolation portion is opposite of said first sidewall of said first shallow trench isolation portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification