Method for producing a silicon substrate having modified surface properties and a silicon substrate of said type

• US 8,492,850 B2
• Filed: 04/27/2007
• Issued: 07/23/2013
• Est. Priority Date: 06/23/2006
• Status: Expired due to Fees

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Lammel, Gerhard, Benzel, Hubert, Illing, Matthias, Laermer, Franz, Kronmueller, Silvia, Farber, Paul, Armbruster, Simon, Reichenbach, Ralf, Schelling, Christoph, Feyh, Ando
• Primary Examiner(s): HA, NATHAN W
• Application Number:
  US12/308,200
• Publication Number:
  US 20100035068A1
• Time in Patent Office: 2,279 Days
• Field of Search: 257/300, 257/396, 438/3, 438/424, 428/317.9, 356/244
• US Class Current: 257/396
• CPC Class Codes: H01L 21/02008 Multistep processes
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02529 Silicon carbide
• CPC Class Codes: H01L 21/02573 Conductivity type
• CPC Class Codes: H01L 21/02601 Nanoparticles fullerenes H10K85/211
• CPC Class Codes: H01L 21/02612 Formation types
• CPC Class Codes: H01L 21/02656 Special treatments
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 33/346 containing porous silicon

Abstract

A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material.

Claims

1. A silicon substrate device, comprising:

a silicon substrate having an essentially planar silicon surface in which there are a plurality of cavities of a diameter of between less than 0.002 μ

m and 10 μ

m; and

a filling material within the cavities and selected from a group of rare earths, wherein the cavities, including the filling material therein, are enclosed on all sides by the silicon substrate.

2. The silicon substrate device of claim 1, wherein the filling material includes a chemical element in a lanthanide series.

3. The silicon substrate device of claim 2, wherein the filling material is erbium.

4. The silicon substrate device of claim 3, wherein the erbium is oxidized.

5. A silicon wafer, comprising:

a silicon substrate having an essentially planar surface in which there are a plurality of cavities of a diameter of between less than 0.002 μ

m and 10 μ

m; and

a filling material within the cavities and selected from a group of rare earths, wherein the cavities, including the filling material therein, are enclosed on all sides by the silicon substrate.