Field effect transistor having conductor electrode in contact with semiconductor layer
First Claim
1. A field effect transistor comprising:
- a semiconductor layer including a first surface and a second surface opposed to the first surface;
a first conductor electrode in contact with the first surface of the semiconductor layer;
a second conductor electrode in contact with the first surface of the semiconductor layer;
a gate provided over the second surface of the semiconductor layer; and
a third conductor electrode in contact with the first surface of the semiconductor layer and between the first conductor electrode and the second conductor electrode so as to cross the semiconductor layer,wherein a material of the semiconductor layer is an oxide semiconductor.
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Accused Products
Abstract
An object is to provide a structure with which the off-state current of a field effect transistor including a conductor-semiconductor junction can be reduced. A semiconductor layer is provided in contact with a first conductor electrode and a second conductor electrode which include a material with a work function that is at the same level as or lower than the electron affinity of the semiconductor layer. A third conductor electrode is formed using a material whose work function is higher than the electron affinity of the semiconductor layer to be in contact with a surface of the semiconductor layer opposite to a surface provided with a gate and to cross the semiconductor layer, so that a Schottky barrier junction is formed in the semiconductor layer. The carrier concentration of the portion including the Schottky barrier junction is extremely low; thus, the off-state current can be reduced.
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Citations
12 Claims
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1. A field effect transistor comprising:
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a semiconductor layer including a first surface and a second surface opposed to the first surface; a first conductor electrode in contact with the first surface of the semiconductor layer; a second conductor electrode in contact with the first surface of the semiconductor layer; a gate provided over the second surface of the semiconductor layer; and a third conductor electrode in contact with the first surface of the semiconductor layer and between the first conductor electrode and the second conductor electrode so as to cross the semiconductor layer, wherein a material of the semiconductor layer is an oxide semiconductor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification