Solid-state imaging device and electronic equipment

• US 8,492,864 B2
• Filed: 10/04/2011
• Issued: 07/23/2013
• Est. Priority Date: 10/12/2010
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Watanabe, Kazufumi
• Primary Examiner(s): YUSHIN, NIKOLAY K
• Application Number:
  US13/252,618
• Publication Number:
  US 20120086094A1
• Time in Patent Office: 658 Days
• Field of Search: 257/432, 257/435, 257/E27.151, 257/E31.127
• US Class Current: 257/435
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14623 Optical shielding
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 31/0232 Optical elements or arrangements associated with the device H01L31/0236 takes precedence; for photovoltaic cells H01L31/054; for photovoltaic modules H02S40/20

Abstract

A solid-state imaging device includes: a substrate; a wiring layer formed on a front side of the substrate in which pixels are formed; a surface electrode pad section formed in the wiring layer; a light-shielding film formed on a rear side of the substrate; a pad section base layer formed in the same layer as the light-shielding film; an on-chip lens layer formed over the light-shielding film and the pad section base layer in a side opposite from the substrate side; a back electrode pad section formed above the on-chip lens layer; a through-hole formed to penetrate the on-chip lens layer, the pad section base layer, and the substrate so as to expose the surface electrode pad section; and a through-electrode layer which is formed in the through-hole and connects the surface electrode pad section and the back electrode pad section.

Claims

1. A solid-state imaging device comprising:

substrate in which a plurality of pixels including a photoelectric conversion section are formed, the substrate having a rear side and a back side;

a wiring layer formed on the front side of the substrate;

a surface electrode pad section formed in the wiring layer;

a light-shielding film formed on the rear side of the substrate;

a pad section base layer formed in the same layer as the light-shielding film;

an on-chip lens layer formed over the light-shielding film and the pad section base layer at the rear side of the substrate;

a back electrode pad section formed above the on-chip lens layer;

a through-hole formed to penetrate the on-chip lens layer, the pad section base layer, and the substrate so that the surface electrode pad section is exposed; and

a through-electrode layer which is formed in the through-hole and connects the surface electrode pad section and the back electrode pad section,

wherein,

the light-shielding film includes an inter-pixel light-shielding film which shields between adjacent pixels, and an invalid pixel light-shielding film for shielding an invalid pixel region among the plurality of pixels.

2. The solid-state imaging device according to claim 1, wherein the through-electrode layer electrically connects the surface electrode pad section, the back electrode pad section, and the pad section base layer.

3. The solid-state imaging device according to claim 1, wherein the inter-pixel light-shielding film and the invalid pixel light-shielding film are electrically connected to each other.

4. The solid-state imaging device according to claim 3, wherein the inter-pixel light-shielding film, the invalid pixel region, and the pad section base layer are electrically connected to each other.

5. The solid-state imaging device according to claim 1, wherein the through-hole includes a first opening portion formed such that the surface electrode pad section is exposed to the light incidence side, and a second opening portion formed to have a larger diameter than the first opening portion and formed such that the pad section base layer is exposed to the light incidence side.

6. The solid-state imaging device according to claim 1, wherein the back electrode pad section is formed so as to extend up above the invalid pixel light-shielding film.

7. An electronic equipment comprising:

an optical lens;

a solid-state imaging device which includes a substrate in which a plurality of pixels which are each provided with a photoelectric conversion section that produces a signal charge according to an amount of received light is formed, a wiring layer formed on a front side of the substrate, a surface electrode pad section formed in the wiring layer, a light-shielding film formed on a back side of the substrate, a pad section base layer formed in the same layer as the light-shielding film, an on-chip lens layer formed at a back side of the substrate on a light incidence side of an upper layer of the light-shielding film and the pad section base layer, a back electrode pad section formed above the on-chip lens layer, a through-hole formed to penetrate the on-chip lens layer, the pad section base layer, and the substrate so that the surface electrode pad section is exposed, and an electrode layer which connects the surface electrode pad section and the back electrode pad section through the through-hole, and on which light condensed by the optical lens is incident; and

a signal processing circuit which processes an output signal that is output from the solid-state imaging device,

wherein,

the light-shielding film includes an inter-pixel light-shielding film which shields between adjacent pixels, and an invalid pixel light-shielding film for shielding an invalid pixel region among the plurality of pixels.

8. The electronic equipment according to claim 7, wherein the through-electrode layer electrically connects the surface electrode pad section, the back electrode pad section, and the pad section base layer.

9. The electronic equipment according to claim 7, wherein the inter-pixel light-shielding film and the invalid pixel light-shielding film are electrically connected to each other.

10. The electronic equipment according to claim 9, wherein the inter-pixel light-shielding film, the invalid pixel region, and the pad section base layer are electrically connected to each other.

11. The electronic equipment according to claim 7, wherein the through-hole includes a first opening portion formed such that the surface electrode pad section is exposed to the light incidence side, and a second opening portion formed to have a larger diameter than the first opening portion and formed such that the pad section base layer is exposed to the light incidence side.

12. The electronic equipment according to claim 7, wherein the back electrode pad section is formed so as to extend up above the invalid pixel light-shielding film.