Solid-state imaging device and electronic equipment
First Claim
1. A solid-state imaging device comprising:
- substrate in which a plurality of pixels including a photoelectric conversion section are formed, the substrate having a rear side and a back side;
a wiring layer formed on the front side of the substrate;
a surface electrode pad section formed in the wiring layer;
a light-shielding film formed on the rear side of the substrate;
a pad section base layer formed in the same layer as the light-shielding film;
an on-chip lens layer formed over the light-shielding film and the pad section base layer at the rear side of the substrate;
a back electrode pad section formed above the on-chip lens layer;
a through-hole formed to penetrate the on-chip lens layer, the pad section base layer, and the substrate so that the surface electrode pad section is exposed; and
a through-electrode layer which is formed in the through-hole and connects the surface electrode pad section and the back electrode pad section,wherein,the light-shielding film includes an inter-pixel light-shielding film which shields between adjacent pixels, and an invalid pixel light-shielding film for shielding an invalid pixel region among the plurality of pixels.
1 Assignment
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Accused Products
Abstract
A solid-state imaging device includes: a substrate; a wiring layer formed on a front side of the substrate in which pixels are formed; a surface electrode pad section formed in the wiring layer; a light-shielding film formed on a rear side of the substrate; a pad section base layer formed in the same layer as the light-shielding film; an on-chip lens layer formed over the light-shielding film and the pad section base layer in a side opposite from the substrate side; a back electrode pad section formed above the on-chip lens layer; a through-hole formed to penetrate the on-chip lens layer, the pad section base layer, and the substrate so as to expose the surface electrode pad section; and a through-electrode layer which is formed in the through-hole and connects the surface electrode pad section and the back electrode pad section.
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Citations
12 Claims
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1. A solid-state imaging device comprising:
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substrate in which a plurality of pixels including a photoelectric conversion section are formed, the substrate having a rear side and a back side; a wiring layer formed on the front side of the substrate; a surface electrode pad section formed in the wiring layer; a light-shielding film formed on the rear side of the substrate; a pad section base layer formed in the same layer as the light-shielding film; an on-chip lens layer formed over the light-shielding film and the pad section base layer at the rear side of the substrate; a back electrode pad section formed above the on-chip lens layer; a through-hole formed to penetrate the on-chip lens layer, the pad section base layer, and the substrate so that the surface electrode pad section is exposed; and a through-electrode layer which is formed in the through-hole and connects the surface electrode pad section and the back electrode pad section, wherein, the light-shielding film includes an inter-pixel light-shielding film which shields between adjacent pixels, and an invalid pixel light-shielding film for shielding an invalid pixel region among the plurality of pixels. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An electronic equipment comprising:
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an optical lens; a solid-state imaging device which includes a substrate in which a plurality of pixels which are each provided with a photoelectric conversion section that produces a signal charge according to an amount of received light is formed, a wiring layer formed on a front side of the substrate, a surface electrode pad section formed in the wiring layer, a light-shielding film formed on a back side of the substrate, a pad section base layer formed in the same layer as the light-shielding film, an on-chip lens layer formed at a back side of the substrate on a light incidence side of an upper layer of the light-shielding film and the pad section base layer, a back electrode pad section formed above the on-chip lens layer, a through-hole formed to penetrate the on-chip lens layer, the pad section base layer, and the substrate so that the surface electrode pad section is exposed, and an electrode layer which connects the surface electrode pad section and the back electrode pad section through the through-hole, and on which light condensed by the optical lens is incident; and a signal processing circuit which processes an output signal that is output from the solid-state imaging device, wherein, the light-shielding film includes an inter-pixel light-shielding film which shields between adjacent pixels, and an invalid pixel light-shielding film for shielding an invalid pixel region among the plurality of pixels. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification