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Metal-contamination-free through-substrate via structure

  • US 8,492,878 B2
  • Filed: 07/21/2010
  • Issued: 07/23/2013
  • Est. Priority Date: 07/21/2010
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising a semiconductor substrate and a through-substrate via (TSV) structure embedded therein, wherein said TSV structure includes:

  • a diffusion barrier liner that comprises a conductive material, wherein an outer sidewall of said conductive material contacts semiconductor surfaces of an entirety of a contiguous sidewall around a hole within said semiconductor substrate;

    a dielectric liner contacting an inner sidewall of said diffusion barrier liner; and

    a metallic conductive via structure laterally contacting said dielectric liner.

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