Metal-contamination-free through-substrate via structure
First Claim
1. A semiconductor structure comprising a semiconductor substrate and a through-substrate via (TSV) structure embedded therein, wherein said TSV structure includes:
- a diffusion barrier liner that comprises a conductive material, wherein an outer sidewall of said conductive material contacts semiconductor surfaces of an entirety of a contiguous sidewall around a hole within said semiconductor substrate;
a dielectric liner contacting an inner sidewall of said diffusion barrier liner; and
a metallic conductive via structure laterally contacting said dielectric liner.
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Accused Products
Abstract
A through-substrate via (TSV) structure that is immune to metal contamination due to a backside planarization process is provided. After forming a through-substrate via (TSV) trench, a diffusion barrier liner is conformally deposited on the sidewalls of the TSV trench. A dielectric liner is formed by depositing a dielectric material on vertical portions of the diffusion barrier liner. A metallic conductive via structure is formed by subsequently filling the TSV trench. Horizontal portions of the diffusion barrier liner are removed. The diffusion barrier liner protects the semiconductor material of the substrate during the backside planarization by blocking residual metallic material originating from the metallic conductive via structure from entering into the semiconductor material of the substrate, thereby protecting the semiconductor devices within the substrate from metallic contamination.
57 Citations
24 Claims
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1. A semiconductor structure comprising a semiconductor substrate and a through-substrate via (TSV) structure embedded therein, wherein said TSV structure includes:
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a diffusion barrier liner that comprises a conductive material, wherein an outer sidewall of said conductive material contacts semiconductor surfaces of an entirety of a contiguous sidewall around a hole within said semiconductor substrate; a dielectric liner contacting an inner sidewall of said diffusion barrier liner; and a metallic conductive via structure laterally contacting said dielectric liner. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor structure comprising a semiconductor substrate and a through-substrate via (TSV) structure embedded therein, wherein said TSV structure includes:
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a diffusion barrier liner that contacts an entirety of a contiguous sidewall around a hole within said semiconductor substrate; a dielectric liner contacting an inner sidewall of said diffusion barrier liner; and a metallic conductive via structure laterally contacting said dielectric liner, wherein said dielectric liner includes a horizontal portion having a distal horizontal surface and a proximal horizontal surface, wherein said distal horizontal surface is farther away from said at least one semiconductor device than said proximal horizontal surface, and said distal horizontal surface is coplanar with an end surface of said metallic conductive via structure. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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21. A semiconductor structure comprising a semiconductor substrate and a through-substrate via (TSV) structure embedded therein, wherein said TSV structure includes:
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a diffusion barrier liner that contacts an entirety of a contiguous sidewall around a hole within said semiconductor substrate; a dielectric liner contacting an inner sidewall of said diffusion barrier liner; a metallic conductive via structure laterally contacting said dielectric liner; and an interconnect-level dielectric layer having a coplanar horizontal surface that contacts said metallic conductive via structure and said diffusion barrier liner. - View Dependent Claims (22, 23, 24)
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Specification