Dual thin film precision resistance trimming
First Claim
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1. A method of forming a trimmable resistance structure in an integrated circuit die, the method comprising:
- forming a first and a second metal interconnection structure spaced from each other and overlying a semiconductor substrate having transistors formed therein;
forming a thin film resistive structure overlying the first and second metal interconnection structures and extending from the first metal interconnection structure to the second metal interconnection structure and being positioned over the semiconductor substrate, the resistive structure being composed of a material whose resistance is permanently changeable by application of heat thereto;
forming a dielectric layer over the resistive structure;
forming a heater overlying the dielectric layer, the dielectric layer being positioned between the heater layer and the resistive structure, the resistive structure being positioned between the heater and semiconductor substrate; and
forming a switch in the semiconductor substrate configured to selectively couple the heater to a voltage supply to cause the heater to heat the resistive structure to cause a permanent change in the resistance of the resistive structure.
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Abstract
A trimmable resistor for use in an integrated circuit is trimmed using a heater. The heater is selectively coupled to a voltage source. The application of voltage to the heater causes the heater temperature to increase and produce heat. The heat permeates through a thermal separator to the trimmable resistor. The resistance of the trimmable resistor is permanently increased or decreased when the temperature of the resistor is increased to a value within a particular range of temperatures.
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Citations
18 Claims
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1. A method of forming a trimmable resistance structure in an integrated circuit die, the method comprising:
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forming a first and a second metal interconnection structure spaced from each other and overlying a semiconductor substrate having transistors formed therein; forming a thin film resistive structure overlying the first and second metal interconnection structures and extending from the first metal interconnection structure to the second metal interconnection structure and being positioned over the semiconductor substrate, the resistive structure being composed of a material whose resistance is permanently changeable by application of heat thereto; forming a dielectric layer over the resistive structure; forming a heater overlying the dielectric layer, the dielectric layer being positioned between the heater layer and the resistive structure, the resistive structure being positioned between the heater and semiconductor substrate; and forming a switch in the semiconductor substrate configured to selectively couple the heater to a voltage supply to cause the heater to heat the resistive structure to cause a permanent change in the resistance of the resistive structure. - View Dependent Claims (2, 3, 4, 18)
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5. A method comprising:
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forming a transistor in a semiconductor substrate; forming a resistor overlying the semiconductor substrate; forming a dielectric layer on the resistor; and forming a heater layer on the dielectric layer and overlying the resistor, the transistor being configured to pass a current through the heater to transfer heat to the resistor to cause a permanent change in a resistance of the resistor. - View Dependent Claims (6, 7, 8, 9)
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10. A method, comprising:
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forming an amplifier in an integrated circuit die; forming a trimmable thin film resistor in the integrated circuit die electrically coupled to the amplifier, a gain of the amplifier being based in part on a resistance of the trimable thin film resistor; forming a thin film heater in the integrated circuit die above the trimable thin film resistor and thermally coupled to the trimmable thin film resistor; forming a transistor in the integrated circuit die electrically coupled to the thin film heater and configured to selectively pass a current through the thin film heater to increase a temperature of the trimable thin film resistor to permanently alter the resistance of the trimable thin film resistor; and forming a thin film thermal separator disposed between the trimmable thin film resistor and the thin film heater. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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Specification