Lithographic apparatus and device manufacturing method

• US 8,493,548 B2
• Filed: 08/06/2007
• Issued: 07/23/2013
• Est. Priority Date: 08/06/2007
• Status: Expired due to Fees

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Ivanov, Vladimir Vitalevich, Banine, Vadim Yevgenyevich, Koshelev, Konstantin Nikolaevich, Krivtsun, Vladimir Mihailovitch
• Primary Examiner(s): Ton, Toan
• Assistant Examiner(s): RIDDLE, CHRISTINA A
• Application Number:
  US11/882,853
• Publication Number:
  US 20090040491A1
• Time in Patent Office: 2,178 Days
• Field of Search: 355/53, 355 67- 71, 355/77, 430/8, 430/30, 430/311, 430/312, 250/493.1, 250/492.2, 250/492.22, 250/548, 250/503.1, 250/504.R, 315/111.01, 315/111.21, 315/111.71, 313/231.61, 313/362.1
• US Class Current: 355/67
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G03F 7/70033 by plasma extreme ultraviolet [EUV] sources
• CPC Class Codes: H05G 2/003 being produced from a liquid or gas
• CPC Class Codes: H05H 1/24 Generating plasma nuclear fusion reactors G21B1/00; gas-filled discharge reactors H01J37/32

Abstract

A lithographic system includes a source configured to generate a radiation, the source including a cathode and an anode, the cathode and the anode configured to create a discharge in a fuel located in a discharge space so as to generate a plasma, the discharge space including, in use, a substance configured to adjust radiation emission by the plasma so as to control a volume defined by the plasma; a pattern support configured to hold a patterning device, the patterning device configured to pattern the radiation to form a patterned beam of radiation; a substrate support configured to support a substrate; and a projection system configured to project the patterned beam of radiation onto the substrate.

Claims

1. A method for generating a radiation for use in a lithographic apparatus, the method comprising:

supplying a fuel to a discharge space located between a cathode and an anode;

creating a discharge between the cathode and the anode in the fuel to form a plasma; and

reducing a volume defined by the plasma by controlling radiation emission by the plasma, the reducing including supplying a substance to the plasma to control the radiation emission, wherein the substance includes at least one of Ga, In, Bi, Pb or Al.

2. The method of claim 1, wherein the fuel includes at least one of Sn, Xe or Li.

3. The method of claim 1, wherein the substance and the fuel are separately supplied to the discharge space.

4. The method of claim 1, wherein the substance is part of a mixture including the fuel.

5. The method of claim 4, wherein the mixture is solid or liquid.

6. The method of claim 5, further comprising supplying the mixture to the cathode before creating the discharge.

7. The method of claim 1, wherein the substance is selected to increase radiation emission in a pre-determined wavelength range.

8. The method of claim 1, wherein the reducing the volume defined by the plasma includes reducing a radial size of the plasma.

9. The method of claim 1, wherein the reducing includes controlling the volume defined by the plasma such that an etendue of a radiation source configured to generate the plasma substantially matches an etendue of the lithographic apparatus.

10. A device manufacturing method comprising:

generating a beam of radiation, the generating including

supplying a fuel to a discharge space located between a cathode and an anode;

creating a discharge between the cathode and the anode in the fuel to form a plasma; and

reducing a volume defined by the plasma by controlling radiation emission by the plasma, the reducing including supplying a substance to the plasma to control the radiation emission, wherein the substance includes at least one of Ga, In, Bi, Pb or Al;

patterning the beam of radiation to form a patterned beam of radiation; and

projecting the patterned beam of radiation onto a substrate.

11. The method of claim 10, wherein the fuel includes at least one of Sn, Xe or Li.

12. The method of claim 10, wherein the substance and the fuel are separately supplied to the discharge space.

13. The method of claim 10, wherein the substance is selected to increase radiation emission in a pre-determined wavelength range.

14. The method of claim 10, wherein the reducing the volume defined by the plasma is such that an etendue of a radiation source configured to generate the plasma substantially matches an etendue of a lithographic apparatus configured to pattern the beam of radiation.

15. A source configured to generate a radiation for a lithographic apparatus, the source comprising:

a cathode and an anode, the cathode and the anode configured to create a discharge in a fuel located in a discharge space so as to generate a plasma, the discharge space including, in use, a substance configured to adjust radiation emission by the plasma so as to reduce a volume defined by the plasma, wherein the substance includes at least one of Ga, In, Bi or Al.

16. The source of claim 15, wherein the fuel includes at least one of Sn, Xe or Li.

17. The source of claim 15, further comprising a fuel supply configured to supply the fuel to the discharge space.

18. The source of claim 15, further comprising a supply configured to supply the substance in the discharge space.

19. The source of claim 18, wherein the substance and the fuel are separately supplied to the discharge space.

20. The source of claim 15, wherein the substance is part of a mixture including the fuel.

21. The source of claim 20, wherein the mixture is solid or liquid.

22. The source of claim 21, wherein the mixture is located on the cathode.

23. The source of claim 15, wherein the substance is selected to increase the radiation emission in a pre-determined wavelength range.

24. The source of claim 15, wherein the substance is configured to reduce a radial size of the plasma.

25. The source of claim 15, further comprising a supply configured to supply both the fuel and the substance in the discharge space.

26. The source of claim 15, wherein an etendue of the source substantially matches an etendue of the lithographic apparatus.

27. A lithographic system comprising:

a source configured to generate a radiation, the source comprising a cathode and an anode, the cathode and the anode configured to create a discharge in a fuel located in a discharge space so as to generate a plasma, the discharge space including, in use, a substance configured to adjust radiation emission by the plasma so as to reduce a volume defined by the plasma, wherein the substance includes at least one of Ga, In, Bi or Al;

a pattern support configured to hold a patterning device, the patterning device configured to pattern the radiation to form a patterned beam of radiation;

a substrate support configured to support a substrate; and

a projection system configured to project the patterned beam of radiation onto the substrate.

28. The apparatus of claim 27, wherein the fuel includes at least one of Sn, Xe or Li.

29. The apparatus of claim 27, further comprising a fuel supply configured to supply the fuel to the discharge space.

30. The apparatus of claim 27, further comprising a supply configured to supply the substance in the discharge space.

31. The apparatus of claim 27, wherein the substance and the fuel are separately supplied to the discharge space.

32. The apparatus of claim 27, wherein the substance is part of a mixture including the fuel.

33. The apparatus of claim 32, wherein the mixture is solid or liquid.

34. The apparatus of claim 33, wherein the mixture is located on the cathode.

35. The apparatus of claim 27, wherein the substance is selected to increase the radiation emission in a pre-determined wavelength range.

36. The apparatus of claim 27, wherein the substance is configured to reduce a radial size of the plasma.

37. The apparatus of claim 27, further comprising a supply configured to supply both the fuel and the substance in the discharge space.

38. The apparatus of claim 27, wherein an etendue of the source substantially matches an etendue of the lithographic apparatus.

39. The apparatus of claim 27, wherein the patterning device includes a programmable mirror array.