Power semiconductor module and semiconductor power converter provided with the same
First Claim
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1. A power semiconductor module comprising:
- a first semiconductor element constituting an upper arm of a first phase in a first circuit of a first system for driving a first electric device;
a second semiconductor element constituting a lower arm of the first phase in the first circuit of the first system;
a third semiconductor element constituting an upper arm of a first phase in a second circuit of a second system for driving a second electric device;
a fourth semiconductor element constituting a lower arm of the first phase in the second circuit of the second system;
a first conductor comprising a first joint surface joined to a positive electrode side of the first semiconductor element, and joined to a positive electrode side of the third semiconductor element;
a second conductor comprising a first joint surface joined to a negative electrode side of the second semiconductor element, and joined to a negative electrode side of the fourth semiconductor element;
a third conductor arranged between the first conductor and the second conductor, and comprising a first joint surface opposed to the first joint surface of the first conductor and joined to a negative electrode side of the first semiconductor element, and a second joint surface opposed to the first joint surface of the second conductor and joined to a positive electrode side of the second semiconductor element; and
a fourth conductor arranged between the first conductor and second conductor, aligned with the third conductor, and comprising a first joint surface opposed to the first joint surface of the first conductor and joined to a negative electrode side of the third semiconductor element, and a second joint surface opposed to the first joint surface of the second conductor and joined to a positive electrode side of the fourth semiconductor element.
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Abstract
A power semiconductor module includes semiconductor elements of a first system constituting each of arms in a circuit of the first system, semiconductor elements of a second system constituting each of arms in a circuit of the second system, a plurality of DC electrode conductors including a common DC electrode conductor joined to the semiconductor elements of the first and second systems, and a plurality of AC electrode conductors joined to the respective semiconductor elements of the first and second systems. Each of the semiconductor elements of the first and second systems is interposed between the DC electrode conductor and AC electrode conductor.
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Citations
17 Claims
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1. A power semiconductor module comprising:
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a first semiconductor element constituting an upper arm of a first phase in a first circuit of a first system for driving a first electric device; a second semiconductor element constituting a lower arm of the first phase in the first circuit of the first system; a third semiconductor element constituting an upper arm of a first phase in a second circuit of a second system for driving a second electric device; a fourth semiconductor element constituting a lower arm of the first phase in the second circuit of the second system; a first conductor comprising a first joint surface joined to a positive electrode side of the first semiconductor element, and joined to a positive electrode side of the third semiconductor element; a second conductor comprising a first joint surface joined to a negative electrode side of the second semiconductor element, and joined to a negative electrode side of the fourth semiconductor element; a third conductor arranged between the first conductor and the second conductor, and comprising a first joint surface opposed to the first joint surface of the first conductor and joined to a negative electrode side of the first semiconductor element, and a second joint surface opposed to the first joint surface of the second conductor and joined to a positive electrode side of the second semiconductor element; and a fourth conductor arranged between the first conductor and second conductor, aligned with the third conductor, and comprising a first joint surface opposed to the first joint surface of the first conductor and joined to a negative electrode side of the third semiconductor element, and a second joint surface opposed to the first joint surface of the second conductor and joined to a positive electrode side of the fourth semiconductor element. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A power semiconductor module comprising:
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a first semiconductor element including a first switching element, and constituting one arm; a second semiconductor element including a second switching element, and constituting another arm; a first conductor joined to a positive electrode side of the first semiconductor element; a second conductor joined to a negative electrode side of the second semiconductor element; a third conductor arranged between the first conductor and the second conductor, and joined to a negative electrode side of the first semiconductor element and a positive electrode side of the second semiconductor element; a plurality of input and output terminals provided for the first switching element and second switching element; a first electrode output terminal extended from the first conductor; a second electrode output terminal extended from the second conductor; a third electrode output terminal extended from the third conductor; and emitter sense terminals provided at the first, second, and third electrode output terminals, and configured to drive the first and second switching elements. - View Dependent Claims (9, 10, 11, 12)
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13. A power semiconductor module comprising:
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a first semiconductor element including a first switching element, and constituting one arm; a second semiconductor element including a second switching element, and constituting another arm; a first conductor joined to a positive electrode side of the first semiconductor element; a second conductor joined to a negative electrode side of the second semiconductor element; and a third conductor arranged between the first conductor and second conductor, and comprising a first joint surface opposed to the first conductor and joined to a negative electrode side of the first semiconductor element, a second joint surface opposed to the second conductor and joined to a positive electrode side of the second semiconductor element, and a central axis parallel to the first and second joint surfaces; the first switching element and the second switching element being arranged at positions asymmetrical with respect to the central axis of the third conductor, wherein the first conductor, second conductor, and third conductor are arranged side by side in parallel with one another, the first semiconductor element includes the first switching element and a first diode which are interposed between the first conductor and the third conductor, and are arranged in a line along the central axis, the second semiconductor element includes the second switching element and a second diode which are interposed between the second conductor and the third conductor, and are arranged in a line along the central axis, and the first switching element and second switching element are arranged at positions shifted from each other in the direction of the central axis. - View Dependent Claims (14, 15, 16, 17)
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Specification