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Power semiconductor module and semiconductor power converter provided with the same

  • US 8,493,762 B2
  • Filed: 12/28/2009
  • Issued: 07/23/2013
  • Est. Priority Date: 12/28/2009
  • Status: Active Grant
First Claim
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1. A power semiconductor module comprising:

  • a first semiconductor element constituting an upper arm of a first phase in a first circuit of a first system for driving a first electric device;

    a second semiconductor element constituting a lower arm of the first phase in the first circuit of the first system;

    a third semiconductor element constituting an upper arm of a first phase in a second circuit of a second system for driving a second electric device;

    a fourth semiconductor element constituting a lower arm of the first phase in the second circuit of the second system;

    a first conductor comprising a first joint surface joined to a positive electrode side of the first semiconductor element, and joined to a positive electrode side of the third semiconductor element;

    a second conductor comprising a first joint surface joined to a negative electrode side of the second semiconductor element, and joined to a negative electrode side of the fourth semiconductor element;

    a third conductor arranged between the first conductor and the second conductor, and comprising a first joint surface opposed to the first joint surface of the first conductor and joined to a negative electrode side of the first semiconductor element, and a second joint surface opposed to the first joint surface of the second conductor and joined to a positive electrode side of the second semiconductor element; and

    a fourth conductor arranged between the first conductor and second conductor, aligned with the third conductor, and comprising a first joint surface opposed to the first joint surface of the first conductor and joined to a negative electrode side of the third semiconductor element, and a second joint surface opposed to the first joint surface of the second conductor and joined to a positive electrode side of the fourth semiconductor element.

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