Power semiconductor module and semiconductor power converter provided with the same

• US 8,493,762 B2
• Filed: 12/28/2009
• Issued: 07/23/2013
• Est. Priority Date: 12/28/2009
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Obu, Toshiharu, Shimizu, Yoshiyuki, Ninomiya, Gou, Ueda, Kazuhiro, Baba, Shinichi
• Primary Examiner(s): Laxton, Gary L
• Application Number:
  US12/647,874
• Publication Number:
  US 20110156797A1
• Time in Patent Office: 1,303 Days
• Field of Search: 363/95, 363/98, 363/132, 363/144, 363/146, 361/715, 361/728, 257/691, 257/712, 257/717
• US Class Current: 363/144
• CPC Class Codes: H01L 25/112 Mixed assemblies
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H02M 7/003 Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Abstract

A power semiconductor module includes semiconductor elements of a first system constituting each of arms in a circuit of the first system, semiconductor elements of a second system constituting each of arms in a circuit of the second system, a plurality of DC electrode conductors including a common DC electrode conductor joined to the semiconductor elements of the first and second systems, and a plurality of AC electrode conductors joined to the respective semiconductor elements of the first and second systems. Each of the semiconductor elements of the first and second systems is interposed between the DC electrode conductor and AC electrode conductor.

Claims

1. A power semiconductor module comprising:

a first semiconductor element constituting an upper arm of a first phase in a first circuit of a first system for driving a first electric device;

a second semiconductor element constituting a lower arm of the first phase in the first circuit of the first system;

a third semiconductor element constituting an upper arm of a first phase in a second circuit of a second system for driving a second electric device;

a fourth semiconductor element constituting a lower arm of the first phase in the second circuit of the second system;

a first conductor comprising a first joint surface joined to a positive electrode side of the first semiconductor element, and joined to a positive electrode side of the third semiconductor element;

a second conductor comprising a first joint surface joined to a negative electrode side of the second semiconductor element, and joined to a negative electrode side of the fourth semiconductor element;

a third conductor arranged between the first conductor and the second conductor, and comprising a first joint surface opposed to the first joint surface of the first conductor and joined to a negative electrode side of the first semiconductor element, and a second joint surface opposed to the first joint surface of the second conductor and joined to a positive electrode side of the second semiconductor element; and

a fourth conductor arranged between the first conductor and second conductor, aligned with the third conductor, and comprising a first joint surface opposed to the first joint surface of the first conductor and joined to a negative electrode side of the third semiconductor element, and a second joint surface opposed to the first joint surface of the second conductor and joined to a positive electrode side of the fourth semiconductor element.

2. The power semiconductor module according to claim 1, wherein the third conductor includes a first end opposed to the fourth conductor with a gap, and the fourth conductor includes a first end opposed to the first end of the third conductor, a second end opposite to the first end of the fourth conductor, and a notch extending from the first end to the second end of the fourth conductor, and

which further comprises:

a positive electrode output terminal extending from the first conductor;

a negative electrode output terminal extending from the second conductor;

a first AC output terminal configured to extend from the first end of the third conductor and beyond the second end of the fourth conductor through the notch of the fourth conductor; and

a second AC output terminal configured to extend from the second end of the fourth conductor.

3. The power semiconductor module according to claim 1, wherein the first, second, third, and fourth conductors are each formed into an elongate shape including first and second axial ends, and are arranged in parallel with one another,

the third conductor is arranged between the first and second conductors in parallel with the first and second conductors with a gap between the first and second conductors, and

the fourth conductor is arranged between the first and second conductors in parallel with the first and second conductors with a gap between the first and second conductors, and aligned with the third conductor,

which further comprises:

a positive electrode output terminal extending from the first axial end of the first conductor;

a negative electrode output terminal extending from the first axial end of the second conductor in the same direction as the positive electrode output terminal;

a first AC output terminal extending from the second axial end of the third conductor opposed to the first axial end of the fourth conductor in a direction opposite to the positive electrode output terminal; and

a second AC output terminal extending from the second axial end of the fourth conductor in a direction opposite to the positive electrode output terminal.

4. The power semiconductor module according to claim 1, wherein the third conductor includes an axial end opposed to the fourth conductor with a gap, and the fourth conductor includes a first axial end opposed to the axial end of the third conductor with a gap, and a second axial end opposite to the first axial end of the fourth conductor, and

which further comprises:

a positive electrode output terminal extending from the first conductor;

a negative electrode output terminal extending from the second conductor; and

a first AC output terminal configured to extend from the axial end of the third conductor beyond the second axial end of the fourth conductor and electrically connected to the fourth conductor.

5. The power semiconductor module according to claim 1, further comprising a radiator member including a joint surface joined to the first conductor, second conductor, third conductor, and fourth conductor.

6. The power semiconductor module according to claim 5, wherein a first joint surface between the first and second semiconductor elements and the first conductor, a second joint surface between the second and fourth semiconductor elements and the second conductor, a third joint surface between the first and second semiconductor elements and the third conductor, and a fourth joint surface between the third and fourth semiconductor elements and the fourth conductor each extends to intersect the joint surface of the radiator member.

7. A semiconductor power converter comprising:

the power semiconductor module according to claim 1;

a drive circuit configured to drive the power semiconductor module; and

a control circuit configured to control the power semiconductor module.

8. A power semiconductor module comprising:

a first semiconductor element including a first switching element, and constituting one arm;

a second semiconductor element including a second switching element, and constituting another arm;

a first conductor joined to a positive electrode side of the first semiconductor element;

a second conductor joined to a negative electrode side of the second semiconductor element;

a third conductor arranged between the first conductor and the second conductor, and joined to a negative electrode side of the first semiconductor element and a positive electrode side of the second semiconductor element;

a plurality of input and output terminals provided for the first switching element and second switching element;

a first electrode output terminal extended from the first conductor;

a second electrode output terminal extended from the second conductor;

a third electrode output terminal extended from the third conductor; and

emitter sense terminals provided at the first, second, and third electrode output terminals, and configured to drive the first and second switching elements.

9. The power semiconductor module according to claim 8, wherein the first conductor, second conductor, and third conductor are arranged side by side in parallel with one another,

the first switching element is interposed between the first conductor and the third conductor, and

the second semiconductor element is interposed between the second conductor and third conductor.

10. The power semiconductor module according to claim 8, further comprising a radiator member including a joint surface joined to the first conductor, second conductor, and third conductor.

11. The power semiconductor module according to claim 10, wherein a first joint surface between the first conductor and the first semiconductor element, a second joint surface between the second conductor and the second semiconductor element, a third joint surface between the third conductor and the first semiconductor element, and a fourth joint surface between the third conductor and the second semiconductor element each extends to intersect the joint surface of the radiator member.

12. A semiconductor power converter comprising:

the power semiconductor module according to claim 8;

a drive circuit configured to drive the power semiconductor module; and

a control circuit configured to control the power semiconductor module.

13. A power semiconductor module comprising:

a first semiconductor element including a first switching element, and constituting one arm;

a second semiconductor element including a second switching element, and constituting another arm;

a first conductor joined to a positive electrode side of the first semiconductor element;

a second conductor joined to a negative electrode side of the second semiconductor element; and

a third conductor arranged between the first conductor and second conductor, and comprising a first joint surface opposed to the first conductor and joined to a negative electrode side of the first semiconductor element, a second joint surface opposed to the second conductor and joined to a positive electrode side of the second semiconductor element, and a central axis parallel to the first and second joint surfaces;

the first switching element and the second switching element being arranged at positions asymmetrical with respect to the central axis of the third conductor,

wherein the first conductor, second conductor, and third conductor are arranged side by side in parallel with one another,

the first semiconductor element includes the first switching element and a first diode which are interposed between the first conductor and the third conductor, and are arranged in a line along the central axis,

the second semiconductor element includes the second switching element and a second diode which are interposed between the second conductor and the third conductor, and are arranged in a line along the central axis, and

the first switching element and second switching element are arranged at positions shifted from each other in the direction of the central axis.

14. The power semiconductor module according to claim 13, wherein the first switching element is opposed to the second diode of the second semiconductor element with the third conductor interposed between the first switching element and the second diode, and

the second switching element is opposed to the first diode of the first semiconductor element with the third conductor interposed between the second switching element and the first diode.

15. The power semiconductor module according to claim 13, further comprising a radiator member including a joint surface joined to the first conductor, second conductor, and third conductor.

16. The power semiconductor module according to claim 15, wherein

the first conductor comprises a first joint surface joined to the first semiconductor element, the second conductor comprises a first joint surface joined to the second semiconductor element, and the first joint surface of the first and second conductors and the first and second joint surface of the third conductor each extends to intersect the joint surface of the radiator member.

17. A semiconductor power converter comprising:

the power semiconductor module according to claim 13;

a drive circuit configured to drive the power semiconductor module; and

a control circuit configured to control the power semiconductor module.