Computer-implemented methods, computer-readable media, and systems for determining one or more characteristics of a wafer

• US 8,494,802 B2
• Filed: 06/19/2009
• Issued: 07/23/2013
• Est. Priority Date: 06/19/2008
• Status: Active Grant

• Current Assignee: KLA-Tencor Corporation
• Original Assignee: KLA-Tencor Corporation
• Inventors: Chen, Haiguang, Kavaldjiev, Daniel, Vintro, Louis, Kren, George
• Primary Examiner(s): TSAI, CAROL S W
• Application Number:
  US13/000,013
• Publication Number:
  US 20110196639A1
• Time in Patent Office: 1,495 Days
• Field of Search: 702/108, 702 81- 84, 702/117, 702/40, 702/85, 356/237.1, 356/237.2, 356/237.5, 356/237.6, 438/14, 382/141, 382/145, 324/457
• US Class Current: 702/108
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G06T 2207/30148 Semiconductor; IC; Wafer
• CPC Class Codes: G06T 7/001 using an image reference approach

Abstract

Computer-implemented methods, computer-readable media, and systems for determining one or more characteristics of a wafer are provided.

Claims

1. A computer-implemented method for determining one or more characteristics of a wafer, comprising:

using a computer system to perform the steps of;

acquiring output generated for the wafer by an inspection system;

separately altering the output generated for different locations on the wafer using a reference corresponding to the different locations on the wafer, wherein the output that is altered comprises output that does not correspond to defects on the wafer; and

determining one or more characteristics of the wafer using the altered output, wherein the one or more characteristics comprise at least one characteristic that is not spatially localized in two dimensions.

2. The method of claim 1, wherein the one or more characteristics further comprise at least one characteristic that is spatially localized in at least one dimension.

3. The method of claim 1, wherein said separately altering is performed prior to detecting the defects on the wafer, and wherein the defects are spatially localized in at least one dimension.

4. The method of claim 1, wherein the inspection system generates the output for the wafer by scanning the wafer during an inspection process, and wherein the reference is created from additional output generated by scanning the wafer with the inspection system during the inspection process.

5. The method of claim 1, wherein the inspection system generates the output for the wafer by scanning the wafer during an inspection process, and wherein the reference is created from additional output generated by scanning the wafer with the inspection system or a different inspection system during a different process.

6. The method of claim 1, wherein the inspection system generates the output for the wafer by scanning the wafer during an inspection process, and wherein the reference is created from additional output generated by scanning a different wafer with the inspection system or a different inspection system.

7. The method of claim 1, wherein the inspection system generates the output for the wafer by scanning the wafer during an inspection process, wherein the reference is created from additional output generated by scanning a different wafer with the inspection system or a different inspection system, and wherein the wafer and the different wafer are in the same lot.

8. The method of claim 1, wherein the inspection system generates the output for the wafer by scanning the wafer during an inspection process, wherein the reference is created from additional output generated by scanning a different wafer with the inspection system or a different inspection system, and wherein the wafer and the different wafer are in different lots.

9. The method of claim 1, further comprising determining a derivative of the output generated for the wafer, wherein the reference comprises a derivative of different output generated by scanning the wafer or a different wafer with the inspection system or a different inspection system, and wherein said separately altering comprises separately altering the derivative of the output generated for the different locations using the derivative of the different output corresponding to the different locations.

10. The method of claim 1, wherein the reference is created by performing a function on data acquired from a computer-readable medium.

11. The method of claim 1, wherein the reference is created by performing a function on data generated for two or more wafers by one or more inspection systems.

12. The method of claim 1, wherein the reference comprises a map of reference values corresponding to the different locations on the wafer.

13. The method of claim 1, wherein the altered output comprises a map of values corresponding to the different locations on the wafer.

14. The method of claim 1, wherein said separately altering suppresses background and surface features in the output.

15. The method of claim 1, wherein said determining comprises extracting one or more features of the wafer from the altered output.

16. The method of claim 1, wherein the one or more characteristics further comprise variations in background light scattering from the wafer, and wherein the method further comprises monitoring a process performed on the wafer based on the variations in the background light scattering.

17. The method of claim 1, wherein the altered output comprises a signal map for the wafer, and wherein the method further comprises detecting excursions in the signal map relative to signal maps for one or more other wafers in the same lot as the wafer or in a different lot than the water.

18. A non-transitory computer-readable medium storing program instructions executable on a computer system for performing a computer-implemented method for determining one or more characteristics of a wafer, wherein the computer-implemented method comprises:

using the computer system to perform the steps of;

acquiring output generated for the wafer by an inspection system;

separately altering the output generated for different locations on the wafer using a reference corresponding to the different locations on the wafer, wherein the output that is altered comprises output that does not correspond to defects on the wafer; and

determining one or more characteristics of the wafer using the altered output, wherein the one or more characteristics comprise at least one characteristic that is not spatially localized in two dimensions.

19. A system configured to determine one or more characteristics of a wafer, comprising:

an inspection subsystem configured to generate output for the wafer; and

a computer subsystem configured to;

acquire the output;

separately alter the output generated for different locations on the wafer using a reference corresponding to the different locations on the wafer, wherein the output that is altered comprises output that does not correspond to defects on the wafer; and

determine one or more characteristics of the wafer using the altered output, wherein the one or more characteristics comprise at least one characteristic that is not spatially localized in two dimensions.