Method, program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography

• US 8,495,529 B2
• Filed: 11/05/2009
• Issued: 07/23/2013
• Est. Priority Date: 08/24/2004
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Masktools B.V. (ASML Holding NV)
• Inventors: Chen, Jang Fung, van Den Broeke, Douglas
• Primary Examiner(s): DOAN, NGHIA M
• Application Number:
  US12/613,344
• Publication Number:
  US 20100047699A1
• Time in Patent Office: 1,356 Days
• Field of Search: 716 50- 55, 430/5, 430/30
• US Class Current: 716/55
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 7/70441 Optical proximity correction [OPC]

Abstract

A method of generating a mask having optical proximity correction features. The method includes the steps of: (a) obtaining a desired target pattern having features to be imaged on a substrate; (b) determining a first focus setting to be utilized when imaging the mask; (c) determining a first interference map based on the target pattern and the first focus setting; (d) determining a first seeding site representing the optimal placement of an assist feature within the mask relative to a feature to be imaged on the basis of the first interference map; (e) selecting a second focus setting which represents a predefined amount of defocus relative to the first focus setting; (f) determining a second interference map based on the target pattern and the second focus setting; (g) determining a second seeding site representing the optimal placement of an assist feature within the mask relative to the feature to be imaged on the basis of the second interference map; and (h) generating an assist feature having a shape which encompasses both the first seeding site and the second seeding site.

Claims

1. A method, implemented by a computer, of improving imaging performance of a mask pattern having a feature to be imaged, said method comprising the steps of:

(a) obtaining a model of a lithographic process for imaging said mask pattern onto a substrate;

(b) determining an optimal setting of said lithographic process to be utilized when imaging said mask pattern;

(c) determining, using said model, a first interference map based on said mask pattern and said optimal setting;

(d) determining a first seeding site representing the optimal placement of an assist feature within said mask pattern relative to said feature to be imaged on the basis of said first interference map;

(e) selecting a plurality of lithographic process settings that represent a predefined amount of variation relative to said optimal setting;

(f) determining, using said model, a plurality of interference maps respectively based on said mask pattern and said plurality of lithographic process settings;

(g) determining a plurality of seeding sites representing the optimal placement of an assist feature within said mask pattern relative to said feature to be imaged on the basis of said plurality of interference maps; and

(h) generating an assist feature having a shape which encompasses both said first seeding site and said plurality of seeding sites,

wherein one or more of steps (a)-(f) are performed using said computer.

2. The method of claim 1, wherein said optimal setting represents the optimal focus setting for imaging said mask pattern.

3. The method of claim 1, wherein said assist feature has a size such that said assist feature is not imaged on said substrate.

4. The method of claim 1, further comprising the step of placing additional assist features relative to additional features to be imaged within said mask pattern, each of said additional assist features being generated by performing steps (b)-(h).

5. The method of claim 1, wherein said interference maps define areas of constructive interference and areas of destructive interference between said feature to be imaged and a field area adjacent said feature.

6. The method of claim 1, further comprising the steps of:

determining a maximum image intensity level for said assist feature, said maximum image intensity defining an imaging intensity that will not result in the imaging of said assist feature on said substrate; and

adjusting the size of said assist feature such that an image intensity level associated with said assist feature is equal to or less than said maximum image intensity level.

7. The method of claim 4, further comprising the steps of:

determining a maximum image intensity level which defines an imaging intensity that will not result in the imaging of said assist features on said substrate;

initially sizing each of said assist features such that said assist features have an imaging intensity level which is below said maximum image intensity level; and

adjusting the size of each of said assist features such that the image intensity level associated with said each assist feature is equal to or less than said maximum image intensity level.

8. The method of claim 1, wherein said lithographic process settings correspond to focus, and wherein said step of selecting said plurality of lithographic processing settings includes determining a plurality of defocus values in accordance with a numerical aperture of the lithographic process.

9. The method of claim 1, wherein said feature to be imaged has a dimension approximately one quarter of a wavelength of said lithographic process.

10. A computer program product for controlling a computer comprising a non-transitory recording medium readable by the computer, means recorded on the recording medium for directing the computer to perform a method of improving imaging performance of a mask pattern having a feature to be imaged, said method comprising the steps of:

(a) obtaining a model of a lithographic process for imaging said mask pattern onto a substrate;

(b) determining an optimal setting of said lithographic process to be utilized when imaging said mask pattern;

(c) determining, using said model, a first interference map based on said mask pattern and said optimal setting;

(d) determining a first seeding site representing the optimal placement of an assist feature within said mask pattern relative to said feature to be imaged on the basis of said first interference map;

(e) selecting a plurality of lithographic process settings that represent a predefined amount of variation relative to said optimal setting;

(f) determining, using said model, a plurality of interference maps respectively based on said mask pattern and said plurality of lithographic process settings;

(g) determining a plurality of seeding sites representing the optimal placement of an assist feature within said mask pattern relative to said feature to be imaged on the basis of said plurality of interference maps; and

(h) generating an assist feature having a shape which encompasses both said first seeding site and said plurality of seeding sites.

11. The computer program product of claim 10, wherein said optimal setting represents the optimal focus setting for imaging said mask pattern.

12. The computer program product of claim 10, wherein said assist feature has a size such that said assist feature is not imaged on said substrate.

13. The computer program product of claim 10, further comprising the step of placing additional assist features relative to additional features to be imaged within said mask pattern, each of said additional assist features being generated by performing steps (b)-(h).

14. The computer program product of claim 10, wherein said interference maps define areas of constructive interference and areas of destructive interference between said feature to be imaged and a field area adjacent said feature.

15. The computer program product of claim 10, further comprising the steps of:

determining a maximum image intensity level for said assist feature, said maximum image intensity defining an imaging intensity that will not result in the imaging of said assist feature on said substrate; and

adjusting the size of said assist feature such that an image intensity level associated with said assist feature is equal to or less than said maximum image intensity level.

16. The computer program product of claim 13, further comprising the steps of:

determining a maximum image intensity level which defines an imaging intensity that will not result in the imaging of said assist features on said substrate;

initially sizing each of said assist features such that said assist features have an imaging intensity level which is below said maximum image intensity level; and

adjusting the size of each of said assist features such that the image intensity level associated with said each assist feature is equal to or less than said maximum image intensity level.

17. The computer program product of claim 10, wherein said lithographic process settings correspond to focus, and wherein said step of selecting said plurality of lithographic processing settings includes determining a plurality of defocus values in accordance with a numerical aperture of the lithographic process.

18. The computer program product of claim 10, wherein said feature to be imaged has a dimension approximately one quarter of a wavelength of said lithographic process.

19. A device manufacturing method comprising the steps of;

(a) providing a substrate that is at least partially covered by a layer of radiation-sensitive material;

(b) providing a projection beam of radiation using an imaging system;

(c) using a mask pattern having a feature to be imaged to endow the projection beam with a pattern in its cross-section;

(d) projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material,

wherein, in step (c), said mask pattern is optimized by a method comprising the steps of;

obtaining a model of said imaging system for imaging said mask pattern onto said substrate;

determining an optimal setting of said imaging system to be utilized when imaging said mask pattern;

determining, using said model, a first interference map based on said mask pattern and said optimal setting;

determining a first seeding site representing the optimal placement of an assist feature within said mask pattern relative to said feature to be imaged on the basis of said first interference map;

selecting a plurality of imaging system settings that represent a predefined amount of variation relative to said optimal setting;

determining, using said model, a plurality of interference maps respectively based on said mask pattern and said plurality of imaging system settings;

determining a plurality of seeding sites representing the optimal placement of an assist feature within said mask pattern relative to said feature to be imaged on the basis of said plurality of interference maps; and

generating an assist feature having a shape which encompasses both said first seeding site and said plurality of seeding sites.