Systems and methods for in situ annealing of electro- and electroless platings during deposition

• US 8,496,799 B2
• Filed: 09/10/2008
• Issued: 07/30/2013
• Est. Priority Date: 02/08/2005
• Status: Expired due to Fees

• Current Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Original Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Inventors: Von Gutfeld, Robert J., West, Alan C.
• Primary Examiner(s): Smith, Nicholas A
• Application Number:
  US12/208,287
• Publication Number:
  US 20090081386A1
• Time in Patent Office: 1,784 Days
• Field of Search: 205/80, 427/421.1
• US Class Current: 205/80
• CPC Class Codes: C23C 18/161 from plating step, e.g. inkjet
• CPC Class Codes: C23C 18/1612 through irradiation means
• CPC Class Codes: C23C 18/1628 Specific elements or parts of the apparatus
• CPC Class Codes: C23C 18/163 Supporting devices for articles to be coated
• CPC Class Codes: C23C 18/1678 Heating of the substrate
• CPC Class Codes: C23C 18/1692 Heat-treatment
• CPC Class Codes: C25D 17/00 Constructional parts, or assemblies thereof, of cells for electrolytic coating
• CPC Class Codes: C25D 17/06 Suspending or supporting devices for articles to be coated
• CPC Class Codes: C25D 21/02 Heating or cooling
• CPC Class Codes: C25D 5/024 using locally applied electromagnetic radiation, e.g. lasers
• CPC Class Codes: C25D 5/026 using locally applied jets of electrolyte
• CPC Class Codes: C25D 5/50 by heat-treatment

Abstract

Systems and methods for in-situ annealing of metal layers as they are being plated on a substrate by action of a chemical solution are provided. The in-situ annealing, in conjunction with controlled slow growth rates, allows control of the structure of the plated metal layers. The systems and methods are used for maskless plating of the substrates.

Claims

1. A method depositing a metal layer on a substrate by action of a chemical solution that includes one of an electrolytic and electroless solution of one or more metal ions, the substrate having a front and a back surface and including an array of spaced-apart sections, each of the sections including a first portion in contact with the chemical solution and a second portion coupled with a rail that is not in contact with the chemical solution, the method comprising:

depositing a metal layer on the first portion of each of the plurality of sections of the substrate by action of the chemical solution; and

annealing the metal layer in-situ during its growth phase as it is being deposited, wherein the annealing comprises locally heating a portion of the rail while moving the rail along the direction of the array of the spaced-apart sections such that at least some sections in the array of the spaced-apart sections of the substrate are heated at different times by thermal conduction from the portion of the rail being heated.

2. The method of claim 1, wherein the depositing comprises depositing the metal layer at a slow growth rate on the order of 1-10 nm/s.

3. The method of claim 1, wherein locally heating the portion of the rail comprises electrically heating the portion of the rail between two electrical contacts that are fixed in location and slidingly coupled to the rail.