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Semiconductor device having variable parameter selection based on temperature

  • US 8,497,453 B2
  • Filed: 09/19/2011
  • Issued: 07/30/2013
  • Est. Priority Date: 04/19/2006
  • Status: Active Grant
First Claim
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1. A method comprising:

  • sensing a first temperature with a first temperature-sensing circuit, wherein the first temperature-sensing circuit includes;

    a first amplifier comprising a first positive input and a first negative input, wherein the first negative input is configured to be driven by a temperature-independent signal;

    a first transistor electrically coupled to the first positive input, wherein the first transistor is configured to be controlled by a temperature signal; and

    a first temperature threshold resistance and a first hysteresis resistance both electrically coupled in series to the first positive input, wherein the first hysteresis resistance is configured to be controlled, at least in part, by an output of the first amplifier;

    generating a first word line disable voltage based on the output of the first amplifier; and

    driving a word line with the first word line disable voltage.

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