Semiconductor device having variable parameter selection based on temperature
First Claim
1. A method comprising:
- sensing a first temperature with a first temperature-sensing circuit, wherein the first temperature-sensing circuit includes;
a first amplifier comprising a first positive input and a first negative input, wherein the first negative input is configured to be driven by a temperature-independent signal;
a first transistor electrically coupled to the first positive input, wherein the first transistor is configured to be controlled by a temperature signal; and
a first temperature threshold resistance and a first hysteresis resistance both electrically coupled in series to the first positive input, wherein the first hysteresis resistance is configured to be controlled, at least in part, by an output of the first amplifier;
generating a first word line disable voltage based on the output of the first amplifier; and
driving a word line with the first word line disable voltage.
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Abstract
A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, a word line low voltage, or the like. In this way, operating specifications of a semiconductor device at worse case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored an temperature threshold values and temperature hysteresis values may be thereby determined.
107 Citations
20 Claims
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1. A method comprising:
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sensing a first temperature with a first temperature-sensing circuit, wherein the first temperature-sensing circuit includes; a first amplifier comprising a first positive input and a first negative input, wherein the first negative input is configured to be driven by a temperature-independent signal; a first transistor electrically coupled to the first positive input, wherein the first transistor is configured to be controlled by a temperature signal; and a first temperature threshold resistance and a first hysteresis resistance both electrically coupled in series to the first positive input, wherein the first hysteresis resistance is configured to be controlled, at least in part, by an output of the first amplifier; generating a first word line disable voltage based on the output of the first amplifier; and driving a word line with the first word line disable voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. An apparatus comprising:
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a temperature-sensing circuit including; an amplifier comprising a positive input, a negative input, and an output, wherein the first negative input is configured to be driven by a temperature-independent signal, and wherein the output is associated with a binary temperature indication; a transistor electrically coupled to the first positive input, wherein the transistor is configured to be controlled by a temperature signal; and a temperature threshold resistance associated with a temperature threshold value and a hysteresis resistance associated with a hysteresis value, wherein the temperature threshold resistance and the hysteresis resistance are both electrically coupled in series to the first positive input, and wherein the hysteresis resistance is configured to be controlled, at least in part, by the output of the amplifier; and a word line driving circuit configured to provide a word line disable voltage based on the binary temperature indication. - View Dependent Claims (13, 14, 15)
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16. A system comprising:
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a first temperature-sensing circuit including; a first amplifier comprising a first positive input and a first negative input, wherein the first negative input is configured to be driven by a temperature-independent signal; a first transistor electrically coupled to the first positive input, wherein the first transistor is configured to be controlled by a temperature signal; and a first temperature threshold resistance and a first hysteresis resistance both electrically coupled in series to the first positive input, wherein the first hysteresis resistance is configured to be controlled, at least in part, by an output of the first amplifier; and a first word line driving circuit configured to provide a first word line disable voltage based on the output of the first amplifier, wherein the first word line disable voltage is configured to drive a word line. - View Dependent Claims (17, 18, 19, 20)
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Specification