Thin film transistor and display unit
First Claim
1. A thin film transistor comprising layers stacked over a substrate, in the order listed:
- a gate electrode;
a gate insulting film;
an oxide semiconductor layer including a channel region; and
a channel protective layer covering the channel region and formed within the boundaries of the gate electrode,wherein,a source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, anda protrusion region in which the top surface of the oxide semiconductor layer is exposed from an end of the source electrode or the drain electrode is provided along a side opposed to a side overlapped with the channel protective layer of at least one of the source electrode and the drain electrode.
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Accused Products
Abstract
A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same. The thin film transistor includes, sequentially over a substrate, a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.
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Citations
10 Claims
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1. A thin film transistor comprising layers stacked over a substrate, in the order listed:
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a gate electrode; a gate insulting film; an oxide semiconductor layer including a channel region; and a channel protective layer covering the channel region and formed within the boundaries of the gate electrode, wherein, a source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and a protrusion region in which the top surface of the oxide semiconductor layer is exposed from an end of the source electrode or the drain electrode is provided along a side opposed to a side overlapped with the channel protective layer of at least one of the source electrode and the drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A display unit comprising:
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a thin film transistor; and a display device, wherein, the thin film transistor includes layers stacked over a substrate, in the order listed, (a) a gate electrode, (b) a gate insulting film, (c) an oxide semiconductor layer including a channel region, and (d) a channel protective layer covering the channel region and formed within the boundaries of the gate electrode, a source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and a protrusion region in which the top surface of the oxide semiconductor layer is exposed from an end of the source electrode or the drain electrode is provided along a side opposed to a side overlapped with the channel protective layer of at least one of the source electrode and the drain electrode. - View Dependent Claims (10)
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Specification