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Thin film transistor and display unit

  • US 8,497,504 B2
  • Filed: 11/02/2011
  • Issued: 07/30/2013
  • Est. Priority Date: 02/09/2009
  • Status: Active Grant
First Claim
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1. A thin film transistor comprising layers stacked over a substrate, in the order listed:

  • a gate electrode;

    a gate insulting film;

    an oxide semiconductor layer including a channel region; and

    a channel protective layer covering the channel region and formed within the boundaries of the gate electrode,wherein,a source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, anda protrusion region in which the top surface of the oxide semiconductor layer is exposed from an end of the source electrode or the drain electrode is provided along a side opposed to a side overlapped with the channel protective layer of at least one of the source electrode and the drain electrode.

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