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Protecting semiconducting oxides

  • US 8,497,506 B2
  • Filed: 09/04/2012
  • Issued: 07/30/2013
  • Est. Priority Date: 10/26/2007
  • Status: Active Grant
First Claim
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1. A transistor structure comprising:

  • a gate electrode;

    a gate dielectric layer over the gate electrode;

    a layered structure over the gate dielectric layer, the layered structure including;

    a source electrode;

    a drain electrode; and

    a semiconducting transition metal oxide layer in which a channel is defined, the channel being electrically connected between the source and drain electrodes;

    the oxide layer having an exposed region;

    a first protective layer on the oxide layer'"'"'s exposed region, the first protective layer including an organic polymer and being structured to protect the oxide layer; and

    a second, inorganic protective layer over the first protective layer.

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