Protecting semiconducting oxides
First Claim
1. A transistor structure comprising:
- a gate electrode;
a gate dielectric layer over the gate electrode;
a layered structure over the gate dielectric layer, the layered structure including;
a source electrode;
a drain electrode; and
a semiconducting transition metal oxide layer in which a channel is defined, the channel being electrically connected between the source and drain electrodes;
the oxide layer having an exposed region;
a first protective layer on the oxide layer'"'"'s exposed region, the first protective layer including an organic polymer and being structured to protect the oxide layer; and
a second, inorganic protective layer over the first protective layer.
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Accused Products
Abstract
In transistor structures such as thin film transistors (TFTs) in an array of cells, a layer of semiconducting oxide material that includes a channel is protected by a protective layer that includes low-temperature encapsulant material. The semiconducting oxide material can be a transition metal oxide material such as zinc oxide, and can be in an active layered substructure that also includes channel end electrodes. The low-temperature encapsulant can, for example, be an organic polymer such as poly(methyl methacrylate) or parylene, deposited on an exposed region of the oxide layer such as by spinning, spincasting, evaporation, or vacuum deposition or an inorganic polymer deposited such as by spinning or liquid deposition. The protective layer can include a lower sublayer of low-temperature encapsulant on the exposed region and an upper sublayer of inorganic material on the lower sublayer. For roll-to-roll processing, a mechanically flexible, low-temperature substrate can be used.
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Citations
9 Claims
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1. A transistor structure comprising:
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a gate electrode; a gate dielectric layer over the gate electrode; a layered structure over the gate dielectric layer, the layered structure including; a source electrode; a drain electrode; and a semiconducting transition metal oxide layer in which a channel is defined, the channel being electrically connected between the source and drain electrodes;
the oxide layer having an exposed region;a first protective layer on the oxide layer'"'"'s exposed region, the first protective layer including an organic polymer and being structured to protect the oxide layer; and a second, inorganic protective layer over the first protective layer. - View Dependent Claims (2)
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3. A transistor structure comprising:
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a mechanically flexible, low-temperature substrate; a gate electrode over the substrate; a gate dielectric layer over the gate electrode; a layered structure over the gate dielectric layer, the layered structure including a semiconducting oxide layer in which a channel is defined;
the oxide layer having an exposed region; anda low-temperature protective layer on the oxide layer'"'"'s exposed region, the low-temperature protective layer being structured to protect the oxide layer, wherein the low-temperature protective layer includes; a lower sublayer that includes a low-temperature encapsulant and is on the oxide layer'"'"'s exposed region; and an upper sublayer on the lower sublayer, the upper sublayer including inorganic material. - View Dependent Claims (4)
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5. An article comprising:
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a substrate; and a layered structure on the substrate;
the layered structure including;a gate layer that includes gate electrodes; a gate dielectric layer over a set of the gate electrodes; an active layered substructure over the gate dielectric layer, the active layered substructure including a layer of semiconducting oxide material;
in operation, the active layered substructure including;a set of one or more channels defined in the layer of semiconducting oxide material, each channel being over at least one of the gate electrodes; and a protective layer over the active layered substructure, the protective layer including low-temperature encapsulant and being structured to protect the semiconducting oxide material, wherein the protective layer includes; a lower sublayer that includes the low-temperature encapsulant and is on the active layered substructure; and an upper sub layer on the lower sublayer, the upper sub layer including inorganic material. - View Dependent Claims (6, 7, 8, 9)
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Specification