Light emitting device and method of manufacturing the same
First Claim
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1. A light emitting device comprising:
- a thin film transistor;
a first insulating film including an inorganic insulating material over the thin film transistor;
a second insulating film including an organic resin material over the first insulating film;
a first electrode over the second insulating film;
a bank including an organic resin material, the bank covering an edge of the first electrode;
an organic compound layer including a first region having a first thickness over the first electrode and a second region having a second thickness over the bank; and
a second electrode over the organic compound layer,wherein the first thickness is larger than the second thickness, andwherein a source or drain electrode of the thin film transistor is electrically connected to the first electrode.
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Abstract
A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification.
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Citations
31 Claims
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1. A light emitting device comprising:
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a thin film transistor; a first insulating film including an inorganic insulating material over the thin film transistor; a second insulating film including an organic resin material over the first insulating film; a first electrode over the second insulating film; a bank including an organic resin material, the bank covering an edge of the first electrode; an organic compound layer including a first region having a first thickness over the first electrode and a second region having a second thickness over the bank; and a second electrode over the organic compound layer, wherein the first thickness is larger than the second thickness, and wherein a source or drain electrode of the thin film transistor is electrically connected to the first electrode. - View Dependent Claims (2, 3, 4, 5, 6, 22, 23, 24, 25)
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7. A light emitting device comprising:
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a thin film transistor; a first insulating film including an organic resin material over the thin film transistor; a second insulating film including a silicon oxide film, a silicon oxynitride film, or a silicon nitride film, over the first insulating film; a first electrode over the second insulating film; a bank including an organic resin material, the bank covering an edge of the first electrode; an organic compound layer including a first region having a first thickness over the first electrode and a second region having a second thickness over the bank; and a second electrode over the organic compound layer, wherein the first thickness is larger than the second thickness. - View Dependent Claims (8, 9, 10, 11, 26, 27)
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12. A light emitting device comprising:
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a thin film transistor; a first insulating film including an organic resin material over the thin film transistor, the first insulating film being a cured film formed by plasma treatment; a second insulating film including a DLC film over the first insulating film; a first electrode over the second insulating film; a bank including an organic resin material, the bank covering an edge of the first electrode; an organic compound layer including a first region having a first thickness over the first electrode and a second region having a second thickness over the bank; and a second electrode over the organic compound layer, wherein the first thickness is larger than the second thickness. - View Dependent Claims (13, 14, 15, 16, 28, 29)
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17. A light emitting device comprising:
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a thin film transistor; a first insulating film including an organic resin material over the thin film transistor; a second insulating film including an aluminum oxide nitride film over the first insulating film; a first electrode over the second insulating film; a bank including an organic resin material, the bank covering an edge of the first electrode; an organic compound layer including a first region having a first thickness over the first electrode and a second region having a second thickness over the bank; and a second electrode over the organic compound layer, wherein the first thickness is larger than the second thickness. - View Dependent Claims (18, 19, 20, 21, 30, 31)
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Specification