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Light emitting device and method of manufacturing the same

  • US 8,497,525 B2
  • Filed: 10/06/2010
  • Issued: 07/30/2013
  • Est. Priority Date: 02/19/2001
  • Status: Expired due to Term
First Claim
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1. A light emitting device comprising:

  • a thin film transistor;

    a first insulating film including an inorganic insulating material over the thin film transistor;

    a second insulating film including an organic resin material over the first insulating film;

    a first electrode over the second insulating film;

    a bank including an organic resin material, the bank covering an edge of the first electrode;

    an organic compound layer including a first region having a first thickness over the first electrode and a second region having a second thickness over the bank; and

    a second electrode over the organic compound layer,wherein the first thickness is larger than the second thickness, andwherein a source or drain electrode of the thin film transistor is electrically connected to the first electrode.

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