Optical proximity correction verification accounting for mask deviations
First Claim
1. A computer-implemented method of accounting for photomask deviations in a lithographic process during optical proximity correction verification, the method comprising:
- identifying a wafer control structure in a data set representing one of a first chip or a kerf;
biasing the data set representing the first chip if the wafer control structure is in the data set representing the first chip;
biasing the data set representing the kerf or a second chip distinct from the first chip, if the wafer control structure is in the data set representing the kerf or the second chip;
simulating formation of the wafer control structure;
determining whether the simulated wafer control structure complies with a target control structure; and
iteratively adjusting an exposure dose condition if the simulated wafer control structure does not comply with the target control structure.
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Abstract
Solutions for accounting for photomask deviations in a lithographic process during optical proximity correction verification are disclosed. In one embodiment, a method includes: identifying a wafer control structure in a data set representing one of a first chip or a kerf; biasing the data set representing the first chip in the case that the wafer control structure is in the data set representing the first chip; biasing the data set representing the kerf or a second chip distinct from the first chip, in the case that the wafer control structure is in the data set representing the kerf or the second chip; simulating formation of the wafer control structure; determining whether the simulated wafer control structure complies with a target control structure; and iteratively adjusting an exposure dose condition in the case that the simulated wafer control structure does not comply with the target control structure.
49 Citations
20 Claims
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1. A computer-implemented method of accounting for photomask deviations in a lithographic process during optical proximity correction verification, the method comprising:
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identifying a wafer control structure in a data set representing one of a first chip or a kerf; biasing the data set representing the first chip if the wafer control structure is in the data set representing the first chip; biasing the data set representing the kerf or a second chip distinct from the first chip, if the wafer control structure is in the data set representing the kerf or the second chip; simulating formation of the wafer control structure; determining whether the simulated wafer control structure complies with a target control structure; and iteratively adjusting an exposure dose condition if the simulated wafer control structure does not comply with the target control structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A computer system comprising:
at least one computing device configured to account for photomask deviations in a lithographic process during optical proximity correction verification by performing actions comprising; identifying a wafer control structure in a data set representing one of a first chip or a kerf; biasing the data set representing the first chip if the wafer control structure is in the data set representing the first chip; biasing the data set representing the kerf or a second chip distinct from the first chip, if the wafer control structure is in the data set representing the kerf or the second chip; simulating formation of the wafer control structure; determining whether the simulated wafer control structure complies with a target control structure; and iteratively adjusting an exposure dose condition if the simulated wafer control structure does not comply with the target control structure. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A computer program comprising program code embodied in at least one non-transitory computer-readable medium, which when executed, enables a computer system to account for photomask deviations in a lithographic process during optical proximity correction verification, the method comprising:
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identifying a wafer control structure in a data set representing one of a first chip or a kerf; biasing the data set representing the first chip if the wafer control structure is in the data set representing the first chip; biasing the data set representing the kerf or a second chip distinct from the first chip, if the wafer control structure is in the data set representing the kerf or the second chip; simulating formation of the wafer control structure; determining whether the simulated wafer control structure complies with a target control structure; and iteratively adjusting an exposure dose condition if the simulated wafer control structure does not comply with the target control structure.
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Specification