Enhanced deposition of noble metals
First Claim
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1. A method for depositing a noble metal, the method comprising:
- contacting a substrate in a reaction chamber comprising quartz walls with a vapor phase reactant comprising a metal halide or metal organic reactant thereby forming a surface termination comprising the metal halide or metal organic on the substrate, wherein the vapor phase reactant does not comprise a noble metal, wherein the substrate and the chamber walls are at the same temperature and wherein the temperature is selected such that the halide or metal organic reacts with the substrate surface but not with the reaction chamber walls;
removing excess vapor phase reactant; and
depositing noble metal on the surface termination comprising the metal halide or metal organic in the quartz reaction chamber by an atomic layer deposition (ALD) process by providing a noble metal reactant and an oxygen reactant.
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Abstract
The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.
238 Citations
22 Claims
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1. A method for depositing a noble metal, the method comprising:
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contacting a substrate in a reaction chamber comprising quartz walls with a vapor phase reactant comprising a metal halide or metal organic reactant thereby forming a surface termination comprising the metal halide or metal organic on the substrate, wherein the vapor phase reactant does not comprise a noble metal, wherein the substrate and the chamber walls are at the same temperature and wherein the temperature is selected such that the halide or metal organic reacts with the substrate surface but not with the reaction chamber walls; removing excess vapor phase reactant; and
depositing noble metal on the surface termination comprising the metal halide or metal organic in the quartz reaction chamber by an atomic layer deposition (ALD) process by providing a noble metal reactant and an oxygen reactant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method for depositing a film comprising a noble metal on a substrate in a reaction chamber comprising quartz walls the method comprising:
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contacting the substrate in the reaction chamber with a vapor phase reactant comprising a metal halide or metal organic compound, wherein the vapor phase reactant does not comprise a noble metal, wherein the substrate and the chamber walls are at the same temperature and wherein the temperature is selected such that the metal halide or metal organic compound reacts with the substrate but does not appreciably react with the walls of the reaction chamber; removing excess vapor phase reactant; and depositing the film comprising the noble metal on the substrate surface having the halide or metal organic terminated surface by an atomic layer deposition (ALD) process comprising alternate and sequential pulses of a reactant comprising a noble metal and a reactant comprising oxygen. - View Dependent Claims (20, 21, 22)
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Specification