Method for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration
First Claim
1. A method of manufacturing thin film photovoltaic devices, the method comprising:
- accessing a substrate housed in a load lock station that has been depressurized from an external ambient pressure to a first internal pressure that is less than the external ambient pressure;
transferring the substrate from the load lock station to a first process station, wherein the substrate is transferred to the first process station via a first transfer station, the first transfer station is mechanically coupled with the load lock station at a first end of the first transfer station, and the first transfer station is mechanically coupled with the first process station at a second end of the first transfer station;
performing a first process for forming a thin film photovoltaic device in the first process station, wherein a first process temperature in the first process station is adjusted using a first process station temperature system, and a first process pressure in the first process station is adjusted using a first process station pressure system;
returning the substrate from the first process station to the load lock station via the first transfer station;
transferring the substrate from the load lock station to a second process station, wherein the substrate is transferred to the second process station via a second transfer station, the second transfer station is mechanically coupled with the load lock station at a first end of the second transfer station, and the second transfer station is mechanically coupled with the second process station at a second end of the second transfer station; and
performing a second process for forming the thin film photovoltaic device in the second process station, wherein a second process temperature in the second process station is adjusted using a second process station temperature system, and a second process pressure in the second process station is adjusted using a second process station pressure system.
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Abstract
A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station. The method includes formation of a first conductor layer overlying the surface region of the substrate. The method includes transferring the substrate to a second process station, and forming a second layer overlying the surface region of the substrate. The method further includes repeating the transferring and processing until all thin film materials of the photovoltaic devices are formed. In an embodiment, the invention also provides a method for large scale manufacture of photovoltaic devices including feed forward control. That is, the method includes in-situ monitoring of the physical, electrical, and optical properties of the thin films. These properties are used to determine and adjust process conditions for subsequent processes.
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Citations
8 Claims
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1. A method of manufacturing thin film photovoltaic devices, the method comprising:
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accessing a substrate housed in a load lock station that has been depressurized from an external ambient pressure to a first internal pressure that is less than the external ambient pressure; transferring the substrate from the load lock station to a first process station, wherein the substrate is transferred to the first process station via a first transfer station, the first transfer station is mechanically coupled with the load lock station at a first end of the first transfer station, and the first transfer station is mechanically coupled with the first process station at a second end of the first transfer station; performing a first process for forming a thin film photovoltaic device in the first process station, wherein a first process temperature in the first process station is adjusted using a first process station temperature system, and a first process pressure in the first process station is adjusted using a first process station pressure system; returning the substrate from the first process station to the load lock station via the first transfer station; transferring the substrate from the load lock station to a second process station, wherein the substrate is transferred to the second process station via a second transfer station, the second transfer station is mechanically coupled with the load lock station at a first end of the second transfer station, and the second transfer station is mechanically coupled with the second process station at a second end of the second transfer station; and performing a second process for forming the thin film photovoltaic device in the second process station, wherein a second process temperature in the second process station is adjusted using a second process station temperature system, and a second process pressure in the second process station is adjusted using a second process station pressure system. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification