Method for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration

• US 8,501,507 B2
• Filed: 01/24/2012
• Issued: 08/06/2013
• Est. Priority Date: 11/14/2007
• Status: Expired due to Fees

• Current Assignee: Stion Corporation
• Original Assignee: Stion Corporation
• Inventors: Lee, Howard W. H., Farris, Chester A. III
• Primary Examiner(s): Lee, Hsien Ming
• Application Number:
  US13/357,445
• Publication Number:
  US 20120186975A1
• Time in Patent Office: 560 Days
• Field of Search: 438/22, 438/29, 438/34, 438/46, 438/47, 438/57, 438/73, 438/74, 438/95, 257/40, 257/E33.001, 257/E25.008, 257/E51.018, 313/504, 313/506, 428/690, 428/917
• US Class Current: 438/22
• CPC Class Codes: H01L 21/67167 surrounding a central transfer chamber
• CPC Class Codes: H01L 21/67173 in-line arrangement
• CPC Class Codes: H01L 21/67213 comprising at least one ion or electron beam chamber coating by ion implantation C23C; ion or electron beam tubes H01J37/00
• CPC Class Codes: H01L 21/6723 comprising at least one plating chamber electroless plating apparatuses C23C, electroplating apparatuses C25D
• CPC Class Codes: Y10S 428/917 Electroluminescent

Abstract

A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station. The method includes formation of a first conductor layer overlying the surface region of the substrate. The method includes transferring the substrate to a second process station, and forming a second layer overlying the surface region of the substrate. The method further includes repeating the transferring and processing until all thin film materials of the photovoltaic devices are formed. In an embodiment, the invention also provides a method for large scale manufacture of photovoltaic devices including feed forward control. That is, the method includes in-situ monitoring of the physical, electrical, and optical properties of the thin films. These properties are used to determine and adjust process conditions for subsequent processes.

Claims

1. A method of manufacturing thin film photovoltaic devices, the method comprising:

accessing a substrate housed in a load lock station that has been depressurized from an external ambient pressure to a first internal pressure that is less than the external ambient pressure;

transferring the substrate from the load lock station to a first process station, wherein the substrate is transferred to the first process station via a first transfer station, the first transfer station is mechanically coupled with the load lock station at a first end of the first transfer station, and the first transfer station is mechanically coupled with the first process station at a second end of the first transfer station;

performing a first process for forming a thin film photovoltaic device in the first process station, wherein a first process temperature in the first process station is adjusted using a first process station temperature system, and a first process pressure in the first process station is adjusted using a first process station pressure system;

returning the substrate from the first process station to the load lock station via the first transfer station;

transferring the substrate from the load lock station to a second process station, wherein the substrate is transferred to the second process station via a second transfer station, the second transfer station is mechanically coupled with the load lock station at a first end of the second transfer station, and the second transfer station is mechanically coupled with the second process station at a second end of the second transfer station; and

performing a second process for forming the thin film photovoltaic device in the second process station, wherein a second process temperature in the second process station is adjusted using a second process station temperature system, and a second process pressure in the second process station is adjusted using a second process station pressure system.

2. The method of claim 1, wherein the first transfer station includes a first transfer station pressure system that maintains a first transfer pressure during the transferring of the substrate to the first process station that is equal to the first process pressure.

3. The method of claim 1, wherein the first transfer station includes a first transfer station gas delivery system that delivers an inert gas to the first transfer station and maintains an inert environment in the first transfer station during the transferring of the substrate to the first process station.

4. The method of claim 1, wherein the first process for forming the thin film photovoltaic device comprises film deposition, patterning, etching, curing, annealing, or cleaning.

5. The method of claim 1, further comprising, prior to transferring the substrate from the load lock station to the second process station, adjusting the load lock pressure from the first internal pressure to a second internal pressure that is equal to the second process pressure, and wherein the second transfer station includes a second transfer station pressure system that maintains a second transfer pressure during the transferring of the substrate to the second process station that is equal to the second process pressure.

6. The method of claim 1, further comprising:

transferring the substrate from the load lock station to a third process station, wherein the substrate is transferred to the third process station via a third transfer station, the third transfer station is mechanically coupled with the load lock station at a first end of the third transfer station, and the third transfer station is mechanically coupled with the third process station at a second end of the third transfer station;

performing a third process for forming the thin film photovoltaic device in the third process station, wherein a third process temperature in the third process station is adjusted using a third process station temperature system, and a third process pressure in the third process station is adjusted using a third process station pressure system.

7. The method of claim 6, further comprising, prior to transferring the substrate from the load lock station to the third process station, adjusting a load lock pressure of the load lock station from the second process pressure to a third internal pressure that is equal to the third process pressure, and wherein the third transfer station includes a third transfer station pressure system that maintains a third transfer pressure during the transferring of the substrate to the third process station that is equal to the third process pressure.

8. The method of claim 7, wherein one of the first process station, the second process station, or the third process station is configured to form a copper-indium composite material with a Cu-rich stoichiometry overlying an electrode layer on the substrate.