Method for producing a semiconductor component arrangement comprising a trench transistor

• US 8,501,561 B2
• Filed: 01/10/2011
• Issued: 08/06/2013
• Est. Priority Date: 03/07/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Zundel, Markus, Hirler, Franz, Krischke, Norbert
• Primary Examiner(s): NGUYEN, THANH T
• Application Number:
  US12/987,847
• Publication Number:
  US 20110165755A1
• Time in Patent Office: 939 Days
• Field of Search: 438242-243, 438/386
• US Class Current: 438/243
• CPC Class Codes: H01L 21/743 Making of internal connections, substrate contacts
• CPC Class Codes: H01L 27/0733 in combination with capacitors only
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7804 the other device being a pn-junction diode
• CPC Class Codes: H01L 29/7809 having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7816 Lateral DMOS transistors, i.e. LDMOS transistors
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence
• CPC Class Codes: H01L 29/945 Trench capacitors

Abstract

Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least an gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps.

Claims

1. A method for producing a semiconductor component arrangement, the method comprising:

producing a trench transistor structure including at least one trench disposed in the semiconductor body and at least one gate electrode disposed in the at least one trench;

producing an electrode structure disposed in at least one further trench, the electrode structure comprising at least one electrode, the electrode structure being produced such that the at least one electrode electrically connects at least two interconnects disposed in or on the semiconductor body;

wherein the at least one trench of the transistor structure and the at least one further trench are produced by common process steps; and

/or

wherein the gate electrode and the at least one electrode of the electrode structure are produced by common process steps.

2. The method of claim 1,

wherein the at least one trench of the transistor structure and the at least one further trench are produced by common process steps;

and

wherein the gate electrode and the at least one electrode of the electrode structure are produced by common process steps.

3. The method of claim 1, further comprising:

producing at least one field electrode of the trench transistor structure in the at least one trench;

producing the electrode structure to comprise at least two electrodes;

wherein the at least two electrodes of the electrode structure and the at least one gate electrode and the at least one field electrode are produced by common process steps.

4. The method of claim 1, wherein the at least one trench of the trench transistor structure and the at least one further trench are produced having different trench widths.

5. The method of claim 1, wherein prior to producing the at least one gate electrode of the trench transistor structure and prior to producing the at least one electrode of the electrode structure, dielectric layers are produced on surfaces of the at least one trench of the trench transistor structure and the at least one further trench.

6. The method of claim 1, wherein the trench transistor structure comprises a body zone and a source zone which are adjacent to the at least one trench of the trench transistor structure, wherein the body zone and the source zone are produced after producing the at least one gate electrode.

7. The method of claim 1, wherein producing the capacitor dielectric comprises the steps of

thermally oxidizing surfaces of the at least one further trench, and

protecting the trench transistor structure against an oxidation by a protection layer during said thermal oxidation step.

8. The method of claim 7, wherein the gate dielectric is produced after the removal of the protection layer.