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Self-aligned protection layer for copper post structure

  • US 8,501,616 B2
  • Filed: 10/25/2012
  • Issued: 08/06/2013
  • Est. Priority Date: 09/01/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate;

    a conductive post overlying and electrically connected to the substrate; and

    a manganese-containing protection layer on a surface of the conductive post.

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