Method for fabricating silicon dioxide layer
First Claim
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1. A method for fabricating silicon dioxide layer, comprising:
- providing a semiconductor substrate;
cleaning the semiconductor substrate with a solution containing hydrogen peroxide to form a chemical oxide layer on the semiconductor substrate;
heating the chemical oxide layer in no oxygen atmosphere, such that the chemical oxide layer forms a compact layer; and
heating the semiconductor substrate in oxygen atmosphere to form a silicon dioxide layer between the semiconductor substrate and the compact layer;
wherein the step of cleaning the semiconductor substrate, the step of heating the chemical oxide layer in no oxygen atmosphere, and the step of heating the semiconductor substrate in oxygen atmosphere are performed sequentially.
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Abstract
A method for fabricating silicon dioxide layer is disclosed. The method includes the following steps. Firstly, a semiconductor substrate is provided. Next, the semiconductor substrate is cleaned with a solution containing hydrogen peroxide to form a chemical oxide layer on the semiconductor substrate. Then, the chemical oxide layer is heated in no oxygen atmosphere, such that the chemical oxide layer forms a compact layer. Then, the semiconductor substrate is heated in oxygen atmosphere to form a silicon dioxide layer between the semiconductor substrate and the compact layer.
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Citations
16 Claims
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1. A method for fabricating silicon dioxide layer, comprising:
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providing a semiconductor substrate; cleaning the semiconductor substrate with a solution containing hydrogen peroxide to form a chemical oxide layer on the semiconductor substrate; heating the chemical oxide layer in no oxygen atmosphere, such that the chemical oxide layer forms a compact layer; and heating the semiconductor substrate in oxygen atmosphere to form a silicon dioxide layer between the semiconductor substrate and the compact layer; wherein the step of cleaning the semiconductor substrate, the step of heating the chemical oxide layer in no oxygen atmosphere, and the step of heating the semiconductor substrate in oxygen atmosphere are performed sequentially. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for fabricating silicon dioxide layer, comprising:
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providing a semiconductor substrate; cleaning the semiconductor substrate with an ozone water solution to form a chemical oxide layer on the semiconductor substrate; heating the chemical oxide layer in no oxygen atmosphere, such that the chemical oxide layer forms a compact layer; and heating the semiconductor substrate in oxygen atmosphere to form a silicon dioxide layer between the semiconductor substrate and the compact layer; wherein the step of cleaning the semiconductor substrate, the step of heating the chemical oxide layer in no oxygen atmosphere, and the step of heating the semiconductor substrate in oxygen atmosphere are performed sequentially. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification