Light-emitting device and fabricating method thereof
First Claim
1. A light emitting device comprising:
- a support substrate;
a wafer bonding layer over the support substrate;
a second electrode layer including a current blocking layer and a reflective current spreading layer over the wafer bonding layer;
a current injection layer over the second electrode layer;
a superlattice structure layer over the current injection layer;
a second conductive semiconductor layer over the superlattice structure layer;
an active layer over the second conductive semiconductor layer;
a first conductive semiconductor layer over the active layer;
a light extracting structure layer on the first conductive semiconductor layer, wherein the light extracting structure layer is formed in a concavo-convex structure and a central region of a surface of the first conductive semiconductor layer is exposed;
a first ohmic contact electrode layer on the light extracting structure layer and on the surface of the first conductive semiconductor layer in the central region, wherein the first ohmic contact electrode layer corresponding to the light extracting structure layer is formed in a concavo-convex structure; and
a first electrode layer on a flat surface of the first ohmic contact electrode layer corresponding to the central region.
2 Assignments
0 Petitions
Accused Products
Abstract
Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a wafer bonding layer over the support substrate, a second electrode layer, which includes a current blocking layer and a reflective current spreading layer, over the wafer bonding layer, a current injection layer over the second electrode layer, a superlattice structure layer over the current injection layer, a second conductive semiconductor layer over the superlattice structure layer, an active layer over the second conductive semiconductor layer, a first conductive semiconductor layer over the active layer, and a first electrode layer over the first conductive semiconductor layer.
-
Citations
20 Claims
-
1. A light emitting device comprising:
-
a support substrate; a wafer bonding layer over the support substrate; a second electrode layer including a current blocking layer and a reflective current spreading layer over the wafer bonding layer; a current injection layer over the second electrode layer; a superlattice structure layer over the current injection layer; a second conductive semiconductor layer over the superlattice structure layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; a light extracting structure layer on the first conductive semiconductor layer, wherein the light extracting structure layer is formed in a concavo-convex structure and a central region of a surface of the first conductive semiconductor layer is exposed; a first ohmic contact electrode layer on the light extracting structure layer and on the surface of the first conductive semiconductor layer in the central region, wherein the first ohmic contact electrode layer corresponding to the light extracting structure layer is formed in a concavo-convex structure; and a first electrode layer on a flat surface of the first ohmic contact electrode layer corresponding to the central region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A light emitting device comprising:
-
a support substrate; a wafer bonding layer over the support substrate; a current blocking layer partially formed over the wafer bonding layer; a reflective current spreading layer over the wafer bonding layer and the current blocking layer; a current injection layer provided over a top surface and a lateral surface of the reflective current spreading layer; a superlattice structure layer over a top surface and a lateral surface of the current injection layer; a second conductive semiconductor layer over the superlattice structure layer and the reflective current spreading layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; a first electrode layer over the first conductive semiconductor layer; and a light extracting structure layer on the first conductive semiconductor in a periphery region of the first electrode layer, wherein the light extracting structure layer is formed in a concavo-convex structure, and wherein the reflective current spreading layer contacts a top surface and a lateral surface of the current blocking layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
-
-
20. A light emitting device comprising:
-
a substrate; a wafer bonding layer on the substrate; a second electrode layer including a current blocking layer and a reflective current spreading layer on the wafer bonding layer; a current injection layer on the second electrode layer; a superlattice structure layer on the current injection layer; a second conductive semiconductor layer on the superlattice structure layer; an active layer on the second conductive semiconductor layer; a first conductive semiconductor layer on the active layer, the first conductive semiconductor layer having a first portion and a second portion on a top surface of the first conductive semiconductor layer; a light extracting structure layer on the first portion of the first conductive semiconductor layer while the second portion of the first conductive semiconductor layer is exposed, and wherein the light extracting structure layer on the first portion of the first conductive semiconductor layer is a concavo-convex structure; a first ohmic contact electrode layer having a concavo-convex structure on the light extracting structure and having a flat surface at an area corresponding to the second portion of the first conductive semiconductor layer; and a first electrode layer on the flat surface of the first ohmic contact electrode layer.
-
Specification