Semiconductor element and display device using the same
First Claim
1. A display device comprising:
- a capacitor comprising;
a first electrode; and
a second electrode;
a thin film transistor comprising;
an island-like semiconductor film;
a gate insulating film in contact with the island-like semiconductor film;
a gate electrode in contact with the gate insulating film;
a first nitride insulating film covering the thin film transistor;
a photosensitive organic resin film over and in contact with the first nitride insulating film, the photosensitive organic resin film having a first opening portion and a second opening portion;
a second nitride insulating film over and in contact with the photosensitive organic resin film, the second nitride insulating film having a third opening portion and a fourth opening portion overlapped with the first opening portion; and
a third electrode over the second nitride insulating film, the third electrode is electrically connected to the island-like semiconductor film,wherein the capacitor comprises a part of the first nitride insulating film and a part of the second nitride insulating film which are overlapped with the first electrode and the second electrode in the second opening portion,wherein the first electrode is formed from a same layer as the gate electrode, andwherein the second electrode is formed from a same layer as the third electrode.
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Accused Products
Abstract
A semiconductor having an active layer; a gate insulating film in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second, nitride insulating film. A first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
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Citations
55 Claims
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1. A display device comprising:
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a capacitor comprising; a first electrode; and a second electrode; a thin film transistor comprising; an island-like semiconductor film; a gate insulating film in contact with the island-like semiconductor film; a gate electrode in contact with the gate insulating film; a first nitride insulating film covering the thin film transistor; a photosensitive organic resin film over and in contact with the first nitride insulating film, the photosensitive organic resin film having a first opening portion and a second opening portion; a second nitride insulating film over and in contact with the photosensitive organic resin film, the second nitride insulating film having a third opening portion and a fourth opening portion overlapped with the first opening portion; and a third electrode over the second nitride insulating film, the third electrode is electrically connected to the island-like semiconductor film, wherein the capacitor comprises a part of the first nitride insulating film and a part of the second nitride insulating film which are overlapped with the first electrode and the second electrode in the second opening portion, wherein the first electrode is formed from a same layer as the gate electrode, and wherein the second electrode is formed from a same layer as the third electrode. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A display device comprising:
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a capacitor comprising; a first electrode; and a second electrode; a thin film transistor comprising; an island-like semiconductor film; a gate insulating film in contact with the island-like semiconductor film; a gate electrode in contact with the gate insulating film; a first nitride insulating film covering the thin film transistor; a resin film over and in contact with the first nitride insulating film, the resin film having a first opening portion and a second opening portion; a second nitride insulating film over and in contact with the resin film, the second nitride insulating film having a third opening portion and a fourth opening portion overlapped with the first opening portion; and a third electrode over the second nitride insulating film, the third electrode is electrically connected to the island-like semiconductor film, wherein the capacitor comprises a part of the first nitride insulating film and a part of the second nitride insulating film which are overlapped with the first electrode and the second electrode in the second opening portion, wherein the first electrode is formed from a same layer as the gate electrode, wherein the second electrode is formed from a same layer as the third electrode, wherein a section of an edge portion of the first opening portion curves, and wherein a section of an edge portion of the second opening portion curves. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A display device comprising:
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a capacitor comprising; a first electrode; and a second electrode; a thin film transistor comprising; an island-like semiconductor film; a gate insulating film in contact with the island-like semiconductor film; a gate electrode in contact with the gate insulating film; a first nitride insulating film covering the thin film transistor; a resin film over and in contact with the first nitride insulating film, the resin film having a first opening portion and a second opening portion; a second nitride insulating film over and in contact with the resin film, wherein a part of the first nitride insulating film is in contact with a part of the second nitride insulating film in a bottom portion of the first opening portion, and wherein the second nitride insulating film has a third opening portion and a fourth opening portion overlapped with the first opening portion; and a third electrode over the second nitride insulating film, the third electrode is electrically connected to the island-like semiconductor film, wherein the capacitor comprises at least one of a part of the first nitride insulating film and a part of the second nitride insulating film which is overlapped with the first electrode and the second electrode in the second opening portion, wherein the first electrode is formed from a same layer as the gate electrode, wherein the second electrode is formed from a same layer as the third electrode, wherein a section of an edge portion of the first opening portion curves, and wherein a section of an edge portion of the second opening portion curves. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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a gate electrode; a gate insulating film over the gate electrode; a semiconductor layer including a channel region over the gate electrode with the gate insulating film therebetween; an electrode over and in contact with the semiconductor layer; an inorganic insulating film over the electrode, the inorganic insulating film including a first opening to expose a portion of the electrode; an organic resin film over the inorganic insulating film, the organic resin film including a second opening wherein the second opening is overlapped with the first opening so as to expose a portion of a top surface of the inorganic insulating film around the first opening; and a pixel electrode over the organic resin film, wherein the organic resin film has a curved inner wall surface in the second opening, and wherein the pixel electrode is electrically connected to the electrode through the first opening and the second opening. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27)
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28. A semiconductor device comprising:
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a gate electrode; a gate insulating film over the gate electrode; a semiconductor layer including a channel region over the gate electrode with the gate insulating film therebetween; an electrode over and in contact with the semiconductor layer; a first inorganic insulating film over the electrode, the first inorganic insulating film including a first opening to expose a portion of the electrode; an organic resin film over the first inorganic insulating film, the organic resin film including a second opening, wherein the second opening is overlapped with the first opening to expose a portion of a top surface of the first inorganic insulating film around the first opening; a second inorganic insulating film comprising silicon and nitrogen over the organic resin film, the second inorganic insulating film including a third opening, wherein the third opening is overlapped with the first opening and the second opening; and a pixel electrode over the second inorganic insulating film, wherein the organic resin film has a curved inner wall surface in the second opening, and wherein the pixel electrode is electrically connected to the electrode through the first opening, the second opening, and the third opening. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36)
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37. A semiconductor device comprising:
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a gate electrode; a gate insulating film over the gate electrode; a semiconductor layer including a channel region over the gate electrode with the gate insulating film therebetween; an electrode over and in contact with the semiconductor layer; a first inorganic insulating film over the electrode, the first inorganic insulating film including a first opening to expose a portion of the electrode; an organic resin film over the first inorganic insulating film, the organic resin film including a second opening, wherein the second opening is overlapped with the first opening to expose a portion of a top surface of the first inorganic insulating film around the first opening; a second inorganic insulating film comprising silicon and nitrogen over the organic resin film, the second inorganic insulating film including a third opening, wherein the third opening is overlapped with the first opening and the second opening; and a pixel electrode over the second inorganic insulating film, wherein the second inorganic insulating film is in contact with the first inorganic insulating film in the second opening, wherein the organic resin film has a curved inner wall surface in the second opening, and wherein the pixel electrode is electrically connected to the electrode through the first opening, the second opening, and the third opening. - View Dependent Claims (38, 39, 40, 41, 42, 43, 44, 45, 46)
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47. A semiconductor device comprising:
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a gate electrode; a gate insulating film over the gate electrode; a semiconductor layer including a channel region over the gate electrode with the gate insulating film therebetween; an electrode over and in contact with the semiconductor layer; a first inorganic insulating film over the electrode, the first inorganic insulating film including a first opening to expose a portion of the electrode; an organic resin film over the first inorganic insulating film, the organic resin film including a second opening, wherein the second opening is overlapped with the first opening to expose a portion of a top surface of the first inorganic insulating film around the first opening; a second inorganic insulating film comprising silicon and nitrogen over the organic resin film, the second inorganic insulating film including a third opening, wherein the third opening is overlapped with the first opening and the second opening; and a pixel electrode over the second inorganic insulating film, wherein a diameter of the second opening is larger than a diameter of the first opening, wherein the organic resin film has a curved inner wall surface in the second opening, and wherein the pixel electrode is electrically connected to the electrode through the first opening, the second opening, and the third opening. - View Dependent Claims (48, 49, 50, 51, 52, 53, 54, 55)
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Specification