Semiconductor device with two metal oxide films and an oxide semiconductor film
First Claim
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1. A semiconductor device comprising:
- an insulating film;
a first metal oxide film on and in contact with the insulating film;
an oxide semiconductor film in contact with the first metal oxide film;
source and drain electrodes in contact with the oxide semiconductor film;
a second metal oxide film in contact with the oxide semiconductor film;
a gate insulating film on and in contact with the second metal oxide film; and
a gate electrode over the gate insulating film.
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Abstract
An object is to stabilize electric characteristics of a semiconductor device including an oxide semiconductor to increase reliability. The semiconductor device includes an insulating film; a first metal oxide film on and in contact with the insulating film; an oxide semiconductor film partly in contact with the first metal oxide film; source and drain electrodes electrically connected to the oxide semiconductor film; a second metal oxide film partly in contact with the oxide semiconductor film; a gate insulating film on and in contact with the second metal oxide film; and a gate electrode over the gate insulating film.
271 Citations
24 Claims
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1. A semiconductor device comprising:
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an insulating film; a first metal oxide film on and in contact with the insulating film; an oxide semiconductor film in contact with the first metal oxide film; source and drain electrodes in contact with the oxide semiconductor film; a second metal oxide film in contact with the oxide semiconductor film; a gate insulating film on and in contact with the second metal oxide film; and a gate electrode over the gate insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 24)
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15. A semiconductor device comprising:
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a first metal oxide film including gallium over a substrate; an oxide semiconductor film over and in contact with the first metal oxide film; source and drain electrodes over and in contact with the oxide semiconductor film; a second metal oxide film including gallium over and in contact with the oxide semiconductor film and the source and drain electrodes; a gate insulating film over and in contact with the second metal oxide film; and a gate electrode over the gate insulating film. - View Dependent Claims (16, 17)
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18. A semiconductor device comprising:
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a first metal oxide film including gallium over a substrate; an oxide semiconductor film over and in contact with the first metal oxide film; source and drain electrodes over and in contact with the oxide semiconductor film; a second metal oxide film including gallium over and in contact with the oxide semiconductor film and the source and drain electrodes; a gate insulating film over and in contact with the second metal oxide film; and a gate electrode over the gate insulating film, wherein the first metal oxide film and the second metal oxide film each contain a constituent element of the oxide semiconductor film. - View Dependent Claims (19, 20)
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21. A semiconductor device comprising:
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a first metal oxide film including gallium over a substrate; an oxide semiconductor film over and in contact with the first metal oxide film; source and drain electrodes over and in contact with the oxide semiconductor film; a second metal oxide film including gallium over and in contact with the oxide semiconductor film and the source and drain electrodes; a gate insulating film over and in contact with the second metal oxide film; and a gate electrode over the gate insulating film, wherein the first metal oxide film and the second metal oxide film each contain a constituent element of the oxide semiconductor film, wherein the second metal oxide film includes a depression portion between the source electrode and the drain electrode. - View Dependent Claims (22, 23)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei
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Primary Examiner(s)PARENDO, KEVIN A
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Application NumberUS13/074,582Publication NumberTime in Patent Office861 DaysField of Search257/43, 257/410, 257/E29.273, 438158-160US Class Current257/43CPC Class CodesH01L 27/1222 with a particular compositi...H01L 27/1225 with semiconductor material...H01L 29/786 Thin film transistors, i.e....H01L 29/78606 with supplementary region o...H01L 29/7869 having a semiconductor body...H01L 29/78693 the semiconducting oxide be...
