Amorphous oxide semiconductor, semiconductor device, thin film transistor and display device
First Claim
Patent Images
1. A display device comprising a thin film transistor comprising:
- a channel layer;
a source electrode electrically connected to said channel layer;
a drain electrode electrically connected to said channel layer; and
a gate electrode adjacent to said channel layer with a gate insulating film interposed therebetween,said channel layer comprising an oxide semiconductor comprising at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein a mass density M of said oxide semiconductor is represented by relational expression (1) shown below;
M≧
0.94×
(7.121x+5.941y+5.675z)/(x+y+z)
(1)where 0≦
x≦
1, 0≦
y≦
1, 0≦
z≦
1, and x+y+z≠
0.
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Abstract
An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below:
M≧0.94×(7.121x+5.941y+5.675z)/(x+y+z) (1)
- where 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z≠0.
39 Citations
6 Claims
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1. A display device comprising a thin film transistor comprising:
-
a channel layer; a source electrode electrically connected to said channel layer; a drain electrode electrically connected to said channel layer; and a gate electrode adjacent to said channel layer with a gate insulating film interposed therebetween, said channel layer comprising an oxide semiconductor comprising at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein a mass density M of said oxide semiconductor is represented by relational expression (1) shown below;
M≧
0.94×
(7.121x+5.941y+5.675z)/(x+y+z)
(1)where 0≦
x≦
1, 0≦
y≦
1, 0≦
z≦
1, and x+y+z≠
0. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification
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Current AssigneeCanon Kabushiki Kaisha (Canon Inc.)
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Original AssigneeCanon Kabushiki Kaisha (Canon Inc.)
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InventorsYabuta, Hisato, Endo, Ayanori, Kaji, Nobuyuki, Hayashi, Ryo
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Primary Examiner(s)Richards, N Drew
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Assistant Examiner(s)SINGAL, ANKUSH K
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Application NumberUS13/403,536Publication NumberTime in Patent Office530 DaysField of Search257/43, 257/E29.095, 257/59, 257/72, 257/290, 438/151, 438/282, 438/483US Class Current257/43CPC Class CodesH01L 29/247 Amorphous materialsH01L 29/66969 of devices having semicondu...H01L 29/78693 the semiconducting oxide be...
