Light-emitting device and method for manufacturing the same

• US 8,502,225 B2
• Filed: 08/30/2010
• Issued: 08/06/2013
• Est. Priority Date: 09/04/2009
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Sakata, Junichiro, Sakakura, Masayuki, Oikawa, Yoshiaki, Okazaki, Kenichi, Maruyama, Hotaka
• Primary Examiner(s): Sandvik, Benjamin
• Assistant Examiner(s): Cruz, Leslie Pilar
• Application Number:
  US12/871,176
• Publication Number:
  US 20110210355A1
• Time in Patent Office: 1,072 Days
• Field of Search: 257/59, 257/72, 257/83, 257/222, 257/291, 257/E33.064, 257/E51.022, 313/500, 313/505
• US Class Current: 257/59
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/247 Amorphous materials
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10K 50/80 Constructional details
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]

Abstract

An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

Claims

1. A light-emitting device comprising:

a driver circuit portion over a substrate, comprising;

a first transistor comprising;

a first gate electrode layer over the substrate;

a gate insulating layer over the first gate electrode layer;

a first oxide semiconductor layer over the gate insulating layer;

a first source electrode layer over the first oxide semiconductor layer; and

a first drain electrode layer over the first oxide semiconductor layer; and

an oxide insulating layer over the first oxide semiconductor layer, the first source electrode layer, and the first drain electrode layer, the oxide insulating layer being in contact with at least a part of the first oxide semiconductor layer between the first source electrode layer and the first drain electrode layer; and

a pixel portion over the substrate, comprising;

a second transistor comprising;

a second gate electrode layer;

the gate insulating layer over the second gate electrode layer;

a second oxide semiconductor layer over the gate insulating layer;

a second source electrode layer over the second oxide semiconductor layer; and

a second drain electrode layer over the second oxide semiconductor layer;

the oxide insulating layer over the second oxide semiconductor layer, the second source electrode layer, and the second drain electrode layer, and the oxide insulating layer in contact with at least a part of the second oxide semiconductor layer between the second source electrode layer and the second drain electrode layer;

a first electrode layer over the oxide insulating layer and electrically connected to the second transistor;

an EL layer over the first electrode layer; and

a second electrode layer over the EL layer,

wherein the first transistor comprises a conductive layer over the oxide insulating layer, the conductive layer overlapping with the first gate electrode layer and the part of the first oxide semiconductor layer,

wherein the first and second gate electrode layers, the first and second source electrode layers, and the first and second drain electrode layers each comprise a metal conductive film, and

wherein the driver circuit portion is located outside the pixel portion.

2. The light-emitting device according to claim 1, wherein each of the first electrode layer and the conductive layer comprises a light-transmitting conductive film, and wherein the first electrode layer and the conductive layer are over and in contact with a same insulating surface.

3. The light-emitting device according to claim 1, wherein an oxide conductive layer is provided between the first oxide semiconductor layer and the first source electrode layer and between the first oxide semiconductor layer and the first drain electrode layer.

4. The light-emitting device according to claim 1, wherein an oxide conductive layer is provided between the second oxide semiconductor layer and the second source electrode layer and between the second oxide semiconductor layer and the second drain electrode layer.

5. The light-emitting device according to claim 1, wherein the second transistor has a single gate structure.

6. The light-emitting device according to claim 1,

further comprising a partition covering a periphery of the first electrode layer, and

wherein the partition does not overlap with the first transistor.

7. The light-emitting device according to claim 1,

wherein the pixel portion further comprises a color filter, and

wherein the color filter is interposed between the oxide insulating layer and the first electrode layer.

8. The light-emitting device according to claim 7, wherein the color filter does not overlap with the first oxide semiconductor layer or the second oxide semiconductor layer.

9. A light-emitting device comprising:

a driver circuit portion over a substrate, comprising;

a first transistor comprising;

a first gate electrode layer over the substrate;

a gate insulating layer over the first gate electrode layer;

a first oxide semiconductor layer over the gate insulating layer;

a first source electrode layer over the first oxide semiconductor layer; and

a first drain electrode layer over the first oxide semiconductor layer; and

an oxide insulating layer over the first oxide semiconductor layer, the first source electrode layer, and the first drain electrode layer, the oxide insulating layer being in contact with at least a part of the first oxide semiconductor layer between the first source electrode layer and the first drain electrode layer; and

a pixel portion over the substrate, comprising;

a second transistor comprising;

a second gate electrode layer;

the gate insulating layer over the second gate electrode layer;

a second oxide semiconductor layer over the gate insulating layer;

a second source electrode layer over the second oxide semiconductor layer; and

second drain electrode layer over the second oxide semiconductor layer;

the oxide insulating layer over the second oxide semiconductor layer, the second source electrode layer, and the second drain electrode layer, the oxide insulating layer being in contact with at least a part of the second oxide semiconductor layer between the second source electrode layer and the second drain electrode layer;

a connection electrode layer over the oxide insulating layer and electrically connected to the second transistor;

a first electrode layer over the oxide insulating layer; and

electrically connected to the second transistor through the connection electrode layer;

an EL layer over the first electrode layer; and

a second electrode layer over the EL layer,

wherein the first transistor comprises a conductive layer over the oxide insulating layer, the conductive layer overlapping with the first gate electrode layer and the part of the first oxide semiconductor layer, and

wherein the first and second gate electrode layers, the first and second source electrode layers, and the first and second drain electrode layers each comprise a metal conductive film, and

wherein the driver circuit portion is located outside the pixel portion.

10. The light-emitting device according to claim 9, wherein each of the first electrode layer and the conductive layer comprises a metal conductive film, and wherein the first electrode layer and the conductive layer are over and in contact with a same insulating surface.

11. The light-emitting device according to claim 9, wherein an oxide conductive layer is provided between the first oxide semiconductor layer and the first source electrode layer and between the first oxide semiconductor layer and the first drain electrode layer.

12. The light-emitting device according to claim 9, wherein an oxide conductive layer is provided between the second oxide semiconductor layer and the second source electrode layer and between the second oxide semiconductor layer and the second drain electrode layer.

13. The light-emitting device according to claim 9, wherein the second transistor has a single gate structure.

14. The light-emitting device according to claim 9,

further comprising a partition covering a periphery of the first electrode layer, and

wherein the partition does not overlap with the first transistor.

15. The light-emitting device according to claim 9,

wherein the pixel portion further comprises a color filter, and

wherein the color filter is interposed between the oxide insulating layer and the first electrode layer.

16. The light-emitting device according to claim 15, wherein the color filter does not overlap with the first oxide semiconductor layer or the second oxide semiconductor layer.