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High power allngan based multi-chip light emitting diode

  • US 8,502,239 B2
  • Filed: 11/10/2005
  • Issued: 08/06/2013
  • Est. Priority Date: 05/13/2003
  • Status: Active Grant
First Claim
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1. A lamp, comprising:

  • a plurality of light emitting diode chips, each comprisinga substrate;

    a lower epitaxial layer formed upon the substrate;

    an upper epitaxial layer, formed upon the lower epitaxial layer to expose a portion of the lower epitaxial layer;

    an upper contact finger formed upon the upper epitaxial layer;

    a lower contact finger formed upon the exposed portion of the lower epitaxial layer, generally parallel to a length of the lower epitaxial layer, wherein the upper and lower epitaxial layers cooperate to form a generally planar active area, a ratio of a length of the active area to a width of the active area is at least 1.5;

    1, and the width of the active area is at least 250 microns; and

    a reflective material intermediate the lower contact finger and the upper epitaxial layer to direct light away from the lower contact finger; and

    a package having a recess defined by a bottom surface and four sidewalls in which pairs of sidewalls are generally co-parallel and intersect to define four corners of the recess, the plurality of diode chips disposed in the recess, and are arranged around the periphery of the recess, with lengths of the diode chips co-parallel to the sidewalls, and each end of each of the diode chips disposed around the periphery of the recess either abut one of the corners of the recess, or abut an edge of another diode chip arranged around the periphery of the recess, and one or more of the plurality of light emitting diode chips are indirectly coupled to receive a biasing voltage from a pair of bonding wires respectively connected to different light emitting diode chips of the plurality.

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