Semiconductor device
First Claim
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1. A semiconductor device comprising:
- a first photo sensor in a pixel;
a transistor in the pixel, wherein the transistor is electrically connected to a pixel electrode;
a second photo sensor out of the pixel;
a controller for setting a drive condition of the first photo sensor in accordance with intensity of light obtained by the second photo sensor; and
a light-blocking film overlapping with the first photo sensor and the transistor,wherein sensitivity of the first photo sensor is changed in accordance with the drive condition,wherein the first photo sensor includes a semiconductor layer, the semiconductor layer including a first region including an impurity element which imparts n-type conductivity and a second region including an impurity element which imparts p-type conductivity, andwherein the first region and the second region are over and in contact with a same surface.
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Abstract
A semiconductor device obtains highly accurate image data regardless of the intensity of incident light. The semiconductor device includes a first photo sensor provided in a pixel, a second photo sensor provided around the pixel, and a controller for setting the drive condition of the first photo sensor in accordance with the intensity of outside light obtained by the second photo sensor. An image is taken after the sensitivity of the first photo sensor is changed in accordance with the drive condition set by the controller. Thus, in the semiconductor device, an image can be taken using the first photo sensor whose sensitivity is optimized in accordance with the intensity of incident light.
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Citations
19 Claims
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1. A semiconductor device comprising:
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a first photo sensor in a pixel; a transistor in the pixel, wherein the transistor is electrically connected to a pixel electrode; a second photo sensor out of the pixel; a controller for setting a drive condition of the first photo sensor in accordance with intensity of light obtained by the second photo sensor; and a light-blocking film overlapping with the first photo sensor and the transistor, wherein sensitivity of the first photo sensor is changed in accordance with the drive condition, wherein the first photo sensor includes a semiconductor layer, the semiconductor layer including a first region including an impurity element which imparts n-type conductivity and a second region including an impurity element which imparts p-type conductivity, and wherein the first region and the second region are over and in contact with a same surface. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a first photo sensor in a pixel; a second photo sensor out of the pixel; and a controller for setting a drive condition of the first photo sensor in accordance with intensity of light obtained by the second photo sensor; wherein the controller includes a first register, a translation table, a CPU, a first memory, a timing controller including a second register, and a power supply circuit including a third register, wherein the first register is configured to store first data of the intensity of the light obtained by the second photo sensor; wherein the translation table is configured to store data for specifying the drive condition depending on intensity of light, wherein the CPU is configured to generate a second data to be stored in the second register and a third data to be stored in the third register by using the first data and the data stored in the translation table, in accordance with a command of a program stored in the first memory, wherein the timing controller is configured to generate a drive timing signal of the first photo sensor by using the second data, wherein the power supply circuit is configured to generate drive voltage of the first photo sensor by using the third data, and wherein sensitivity of the first photo sensor is changed in accordance with the drive timing signal and the drive voltage. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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a first photo sensor in a pixel; a second photo sensor out of the pixel; and a controller for setting a drive condition of the first photo sensor in accordance with intensity of light obtained by the second photo sensor; wherein the controller includes a first register, a translation table, a CPU, a first memory, a second memory, a timing controller including a second register, and a power supply circuit including a third register, wherein the first register is configured to store first data of the intensity of the light obtained by the second photo sensor; wherein the translation table is configured to store data for specifying the drive condition depending on intensity of light, wherein in accordance with a command of a program stored in the first memory, the CPU is configured to execute the program by using the second memory to generate a second data to be stored in the second register and a third data to be stored in the third register by using the first data and the data stored in the translation table, wherein the timing controller is configured to generate a drive timing signal of the first photo sensor by using the second data, wherein the power supply circuit is configured to generate drive voltage of the first photo sensor by using the third data, and wherein sensitivity of the first photo sensor is changed in accordance with the drive timing signal and the drive voltage. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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Specification