Lithographic apparatus and device manufacturing method

• US 8,502,954 B2
• Filed: 05/21/2009
• Issued: 08/06/2013
• Est. Priority Date: 03/29/2004
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Van Der Feltz, Gustaaf Willem, Gui, Cheng-Qun, Hoefnagels, Johan Christiaan Gerard
• Primary Examiner(s): Kim, Peter B
• Application Number:
  US12/469,953
• Publication Number:
  US 20100014059A1
• Time in Patent Office: 1,538 Days
• Field of Search: 355/67, 355/53, 355/55, 355/72, 355/75, 355/30, 356/399, 356/400, 356/401, 250/492.2, 430/22, 430/30
• US Class Current: 355/30
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/70875 Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

Abstract

A lithographic apparatus and method in which a system is used to emit a patterned beam. The patterned beam is projected onto a target portion of the surface of a substrate supported on a substrate support. The target portion has predetermined spatial characteristics relative to the substrate table that are appropriate for a desired exposure pattern on the surface of the substrate. The temperature of the substrate is measured, and the dimensional response of the substrate to the measured temperature is calculated. The spatial characteristics of the target portion relative to the substrate table are adjusted to compensate for the calculated dimensional response.

Claims

1. A lithographic apparatus, comprising:

a substrate support configured to support a substrate;

a projection system configured to project a patterned beam onto a target portion on a surface of the substrate, the patterned beam having predetermined spatial characteristics relative to the substrate support for a desired exposure pattern on the surface of the substrate support;

a temperature measuring system configured to measure a temperature of the substrate at a plurality of regions of the substrate;

a calculating system configured to develop a model of a dimensional response of the substrate to the measured temperature; and

an adjusting system comprising a system configured to develop a map of a change in position of points on the substrate relative to a coordinate system given the measured temperature at the plurality of regions of the substrate and the dimensional response model, the adjusting system configured to adjust the spatial characteristics of the patterned beam relative to the substrate support in accordance with the change in position map to compensate for the calculated dimensional response.

2. The apparatus of claim 1, wherein the temperature measuring system comprises at least one sensor configured to measure the temperature of the substrate at each of the plurality of regions distributed across the surface of the substrate.

3. The apparatus of claim 1, wherein the temperature measuring system comprises a plurality of sensors distributed across the substrate support.

4. The apparatus of claim 3, wherein each sensor in the plurality of the sensors is configured to sense the temperature of each of the plurality of adjacent regions on the substrate.

5. The apparatus of claim 3, wherein each sensor in the plurality of the sensors is configured to sense the temperature of an adjacent region of the substrate support.

6. The apparatus of claim 1, wherein the temperature measuring system comprises:

a plurality of sensors distributed on a sensor support positioned above the substrate support; and

a scanning system that is arranged to displace the substrate support relative to the plurality of sensors and to measure the temperature of a plurality of regions of the substrate adjacent to each of the plurality of sensors at each of a plurality of relative positions between the substrate support and the support.

7. The apparatus of claim 6, wherein the plurality of sensors are supported on a stationary frame beneath which the sensor support is displaceable.

8. The apparatus of claim 6, wherein the plurality of sensors are supported in a linear array extending transversely relative to a direction in which the substrate support is displaceable.

9. The apparatus of claim 1, wherein:

the temperature measuring system comprises a substrate temperature mapping system configured to develop a map representative of the temperature at the plurality of regions of the substrate;

the coordinate system comprises a substrate support coordinate system; and

the calculating system comprises a system configured to develop the model of the dimensional response of the substrate in the substrate support coordinate system.

10. The apparatus of claim 1, wherein the adjusting system comprises an image correction system configured to adjust a cross-sectional shape of the patterned beam to adjust a shape of the patterned beam projected on the target portion.

11. The apparatus according to claim 1, wherein the adjusting system comprises a beam alignment adjustment system configured to adjust the position of the target portion relative to the substrate support.

12. The apparatus according to claim 1, wherein the adjusting system comprises a beam magnification adjustment system configured to adjust a size of the target portion.

13. A device manufacturing method, comprising:

supporting a substrate on a substrate support;

projecting a patterned beam of radiation onto a target portion on a surface of the substrate, the patterned beam having spatial characteristics relative to the substrate support for a desired exposure patterned on the surface of the substrate supported in a predetermined position on the substrate support;

measuring a temperature of the substrate at a plurality of regions of the substrate;

developing a model of a dimensional response of the substrate relative to the measured temperature;

developing a substrate position map comprising a change in position of points on the substrate relative to a coordinate system based on the measured temperature across the substrate and the model of the dimensional response;

adjusting the spatial characteristics of the patterned beam relative to the substrate support based on the substrate position map to compensate for the calculated dimensional response.

14. The method of claim 13, wherein the temperature is measured at each of the plurality of regions distributed across the surface of the substrate.

15. The method of claim 13, wherein the temperature is measured with a plurality of sensors distributed across the substrate support, each of the plurality of sensors configured to sense the temperature of each of the plurality of adjacent regions on the substrate.

16. The method of claim 13, wherein:

a plurality of sensors are distributed on a sensor support located above the substrate support;

the substrate support and the plurality of sensors are displaced relative to each other; and

the temperature of a plurality of regions of the substrate adjacent to each of the plurality of sensors are measured at each of a plurality of relative positions between the substrate support and the sensor support.

17. The method of claim 16, wherein the plurality of sensors are supported on a stationary frame located above the substrate support, the substrate support displaced beneath the stationary frame.

18. The method of claim 17, wherein the substrate support is displaced in a predetermined direction and the plurality of sensors are supported in a linear array extending transverse to the predetermined direction.

19. The method of claim 13, wherein:

a map of the temperature across the substrate is developed;

the coordinate system comprises a substrate-support coordinate system; and

the model of the dimensional response of the substrate is developed in the substrate support coordinate system.