Magneto-elastic anisotropy assisted thin film structure

• US 8,503,126 B2
• Filed: 01/18/2012
• Issued: 08/06/2013
• Est. Priority Date: 11/02/2005
• Status: Active Grant

• Current Assignee: Seagate Technology LLC (Seagate Technology Holdings Plc)
• Original Assignee: Seagate Technology LLC (Seagate Technology Holdings Plc)
• Inventors: Hsia, Yiao-Tee, Peng, Wei, Klemmer, Timothy J.
• Primary Examiner(s): BERNATZ, KEVIN M
• Application Number:
  US13/352,692
• Publication Number:
  US 20120113541A1
• Time in Patent Office: 566 Days
• Field of Search: None
• US Class Current: 360/59
• CPC Class Codes: G11B 5/72 Protective coatings, e.g. anti-static or antifriction
• CPC Class Codes: G11B 5/73913 Composites or coated substrates
• CPC Class Codes: G11B 5/73919 Aluminium or titanium elemental or alloy substrates
• CPC Class Codes: G11B 5/73921 Glass or ceramic substrates
• CPC Class Codes: Y10T 29/4902 Electromagnet, transformer or inductor

Abstract

A method includes activating a stress-effecting layer of a thin film structure, having the stress effecting layer adjacent to a magnetic layer, to induce a magneto-elastic anisotropy in the magnetic layer.

Claims

1. A method, comprising:

rotating a magnetic recording medium adjacent a data transducer, the medium comprising a stress-effecting layer and a magnetic layer; and

activating the stress-effecting layer to induce a magneto-elastic anisotropy in the magnetic layer.

2. The method of claim 1, wherein activating the stress-effecting layer reduces a composite effective magnetic anisotropy of the magnetic layer.

3. The method of claim 1, wherein the induced magneto-elastic anisotropy is localized to a region of the medium having an area on the order of one bit in the magnetic layer.

4. The method of claim 1, wherein the induced magneto-elastic anisotropy occurs only when the stress-effecting layer is activated.

5. The method of claim 1, wherein the stress-effecting layer is activated by one or more of:

heating the stress-effecting layer;

applying a mechanical force to the stress-effecting layer;

applying an electric field to the stress-effecting layer;

or

applying a magnetic field to the stress-effecting layer.

6. The method of claim 1, wherein the magnetic layer of the medium comprises one of a perpendicular magnetic recording layer, a longitudinal magnetic recording layer, or a tilted magnetic recording layer.

7. The method of claim 1, wherein the stress-effecting layer comprises a magnetostrictive material including at least one of:

iron, cobalt, and/or nickel in combination with praseodymium, terbium, samarium, holium, erbium and/or dysprosium.

8. The method of claim 1, wherein the stress-effecting layer comprises a piezoelectric material including at least one of:

quartz crystal, lithium niobates, barium titanate, lead titanate, lead zirconate-lead titanate, meta-lead niobate, and/or polyvinylidenfluoride.

9. The method of claim 1, wherein the stress-effecting layer comprises a thermal expansion material including at least one of:

a shape memory alloy, aluminum, copper, nickel, iron, silver, gold, and/or alloys thereof.

10. The method of claim 1, wherein the stress-effecting layer comprises an electrostatic material including at least one of:

silver, copper, aluminum, tungsten, iron, platinum, lead and/or alloys thereof.

11. The method of claim 1, wherein the magnetic recording medium further comprises an additional stress-effecting layer adjacent the magnetic layer.

12. The method of claim 11, wherein the stress-effecting layer comprises an electrostatic material having a first polarity and the additional stress-effecting layer comprises an electrostatic material having a second polarity, the second polarity being opposite the first polarity.

13. A method, comprising:

positioning a recording head adjacent to a data storage medium including a stress effecting layer adjacent to a magnetic layer;

activating the stress-effecting layer to induce a magneto-elastic anisotropy in the magnetic layer; and

applying a magnetic field to the data storage medium to write data to the data storage medium.

14. The method of claim 13, wherein activating the stress-effecting layer reduces a composite effective magnetic anisotropy of the magnetic layer.

15. The method of claim 13, wherein the induced magneto-elastic anisotropy is localized to a region having an area on the order of one bit in the magnetic layer.

16. The method of claim 13, wherein the induced magneto-elastic anisotropy occurs only when the stress-effecting layer is activated.

17. The method of claim 13, wherein the stress-effecting layer is activated by one or more of:

heating the stress-effecting layer;

applying a mechanical force to the stress-effecting layer;

applying an electric field to the stress-effecting layer;

or

applying a magnetic field to the stress-effecting layer.

18. The method of claim 13, wherein the stress-effecting layer is activated by heating the stress-effecting layer to a temperature less than a Curie temperature of the magnetic layer.

19. The method of claim 18, wherein the stress-effecting layer is heated to a temperature less than about 200°

K.

20. The method of claim 13, wherein the data storage medium further comprises an additional stress-effecting layer adjacent the magnetic layer.