Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks

• US 8,503,240 B2
• Filed: 07/16/2012
• Issued: 08/06/2013
• Est. Priority Date: 02/17/2000
• Status: Expired due to Fees

• Current Assignee: SanDisk Technologies LLC (Western Digital Corporation)
• Original Assignee: SanDisk Corporation (Western Digital Corporation)
• Inventors: Conley, Kevin M., Mangan, John S., Craig, Jeffrey G.
• Primary Examiner(s): Nguyen, Tuan T.
• Application Number:
  US13/550,157
• Publication Number:
  US 20120294084A1
• Time in Patent Office: 386 Days
• Field of Search: 365/185.11, 365/230.06, 365/230.03
• US Class Current: 365/185.11
• CPC Class Codes: G06F 12/0246 in block erasable memory, e.g. flash memory
• CPC Class Codes: G06F 2212/7203 Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks
• CPC Class Codes: G06F 2212/7207 management of metadata or control data
• CPC Class Codes: G06F 2212/7208 Multiple device management, e.g. distributing data over multiple flash devices
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 16/107 Programming all cells in an array, sector or block to the same state prior to flash erasing
• CPC Class Codes: G11C 16/3459 Circuits or methods to verify correct programming of nonvolatile memory cells
• CPC Class Codes: G11C 2216/14 Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory
• CPC Class Codes: G11C 29/82 for EEPROMs

Abstract

A non-volatile memory system is formed of floating gate memory cells arranged in blocks as the smallest unit of memory cells that are erasable together. One feature is the storage in separate blocks of the characteristics of a large number of blocks of cells in which user data is stored. These characteristics for user data blocks being accessed may, during operation of the memory system by its controller, be stored in a random access memory for ease of access and updating. A typical form of the memory system is as a card that is removably connectable with a host system but may alternatively be implemented in a memory embedded in a host system. The memory cells may be operated with multiple states in order to store more than one bit of data per cell.

Claims

1. A memory system comprising:

an array of re-programmable non-volatile memory cells organized into distinct blocks of a plurality of simultaneously erasable memory cells, each block having a physical address and for storing units of data addressable by logical block addresses;

the logical block addresses being grouped into a plurality of distinct non-overlapping ranges of continuous logical block addresses;

a map of logical block addresses corresponding to physical addresses of the blocks; and

a controller for accessing at least one of the physical blocks in response to a logical block address received by the memory system by identifying at least one of the plurality of ranges in which the received logical block address exists and the physical address of the block being accessed that corresponds to the received logical block address within the identified range.

2. The memory of claim 1, wherein the map is additionally for identifying those of the blocks designated to store user data.

3. The memory of claim 1, wherein the memory system has its blocks organized in a plurality of sub-arrays, and wherein the plurality of ranges of logical block addresses individually include a range of logical block addresses that correspond to addresses of physical blocks within less than all of the plurality of sub-arrays.

4. The memory of claim 3, additionally comprising the controller simultaneously programming user data into a plurality of physical blocks.

5. The memory of claim 3, wherein the less than all of the plurality of sub-arrays are accessed on one integrated circuit chip.

6. The memory of claim 5, additionally comprising the controller simultaneously programming user data into a plurality of physical blocks.

7. The memory of claim 3, wherein the less than all of the plurality of sub-arrays are accessed on more than one integrated circuit chip.

8. The memory of claim 7, additionally comprising the controller simultaneously programming user data into a plurality of physical blocks.

9. The memory of claim 1, wherein numbers of logical block addresses within at least two of said ranges of logical block addresses are different.

10. The memory of claim 9, additionally comprising the controller accessing another of the physical blocks not designated to store user data by identifying a corresponding another logical block address, wherein said another logical block address is absent from said ranges of logical block addresses, for storing data of parameters used to operate the memory system.

11. The memory of claim 2, additionally comprising the controller accessing another physical block not designated to store user data by identifying a corresponding another logical block address, wherein said another logical block address is absent from said ranges of logical block addresses, for storing data of parameters used to operate the memory system.

12. The memory of claim 11, additionally comprising the controller simultaneously programming user data into a plurality of physical blocks.

13. The memory of claim 1, wherein the memory cells of at least some of the physical blocks of memory cells are individually operated with more than two storage states in order to store more than one bit of data per memory cell.

14. The memory of claim 1, additionally comprising the controller simultaneously programming user data into a plurality of physical blocks.

15. The memory of claim 14, wherein logical block addresses corresponding to the plurality of physical blocks are within different ones of the plurality of ranges of logical block addresses.

16. The memory of claim 1, wherein the memory system is contained within an enclosed memory card having electrical contacts thereon that match electrical contacts of a receptacle of a host system, the memory card thereby being removably connectable with the host system.

17. The memory of claim 3, wherein the memory system is contained within an enclosed memory card having electrical contacts thereon that match electrical contacts of a receptacle of a host system, the memory card thereby being removably connectable with the host system.

18. The memory of claim 10, wherein the memory system is contained within an enclosed memory card having electrical contacts thereon that match electrical contacts of a receptacle of a host system, the memory card thereby being removably connectable with the host system.