Method for adjusting resonance frequencies of a vibrating microelectromechanical device

• US 8,505,358 B2
• Filed: 09/16/2011
• Issued: 08/13/2013
• Est. Priority Date: 10/21/2008
• Status: Active Grant

• Current Assignee: Teledyne Scientific & Imaging, LLC (Teledyne Technologies Incorporated)
• Original Assignee: Teledyne Scientific & Imaging, LLC (Teledyne Technologies Incorporated)
• Inventors: DeNatale, Jeffrey F., Stupar, Philip A.
• Primary Examiner(s): LARKIN, DANIEL SEAN
• Application Number:
  US13/235,265
• Publication Number:
  US 20120006787A1
• Time in Patent Office: 697 Days
• Field of Search: 73/13.7, 73/17.7, 735/041.2, 216/41, 216/48, 216/51
• US Class Current: 73/1.37
• CPC Class Codes: G01C 19/56 Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
• CPC Class Codes: Y10T 29/42 Piezoelectric device making

Abstract

The present invention relates to a method for adjusting the resonant frequencies of a vibrating microelectromechanical (MEMS) device. In one embodiment, the present invention is a method for adjusting the resonant frequencies of a vibrating mass including the steps of patterning a surface of a device layer of the vibrating mass with a mask, etching the vibrating mass to define a structure of the vibrating mass, determining a first set of resonant frequencies of the vibrating mass, determining a mass removal amount of the vibrating mass and a mass removal location of the vibrating mass to obtain a second set of resonant frequencies of the vibrating mass, removing the mask at the mass removal location, and etching the vibrating mass to remove the mass removal amount of the vibrating mass at the mass removal location of the vibrating mass.

Claims

1. A method for adjusting the resonant frequencies of a vibrating MEMS device comprising the steps of:

patterning a surface of a structural layer used to form the vibrating MEMS device with a photoresist, the photoresist having open areas where the structural layer used to form the vibrating MEMS device should be etched;

etching the structural layer used to form the vibrating MEMS device at locations corresponding to the open areas to structurally define the vibrating MEMS device;

determining a first resonant frequency of the vibrating MEMS device along a first axis and a second resonant frequency of the vibrating MEMS device along a second axis;

determining a first mass removal amount of the vibrating MEMS device and a first mass removal location of the vibrating MEMS device to alter the first resonant frequency and reduce a resonant frequency difference between the first resonant frequency and the second resonant frequency;

removing the photoresist at the first mass removal location using laser ablation;

etching the vibrating MEMS device to remove the first mass removal amount of the vibrating MEMS device at the first mass removal location of the vibrating MEMS device;

determining a third resonant frequency of the vibrating MEMS device along the first axis and a fourth resonant frequency of the vibrating MEMS device along the second axis;

determining a second mass removal amount of the vibrating MEMS device and a second mass removal location of the vibrating MEMS device to alter the third resonant frequency and reduce a resonant frequency difference between the third resonant frequency and the fourth resonant frequency;

coating a portion of the surface of the vibrating MEMS device with a masking material;

removing the masking material at the second mass removal location using laser ablation; and

etching the vibrating MEMS device to remove the second mass removal amount of the vibrating MEMS device at the second mass removal location of the vibrating MEMS device.

2. The method of claim 1 wherein the vibrating MEMS device is a MEMS resonator.

3. The method of claim 2 wherein the MEMS resonator is a MEMS gyroscope resonator.

4. The method of claim 1 further comprising the step of removing any remaining photoresist that is patterning the surface of the vibrating MEMS device after the etching the vibrating MEMS device at the first mass removal location of the vibrating MEMS device.

5. The method of claim 1 further comprising the step of removing any remaining masking material that is coating the surface of the vibrating MEMS device after the etching the vibrating MEMS device at the second mass removal location of the vibrating MEMS device.

6. The method of claim 5 wherein the removing any remaining masking material that is coating the surface of the vibrating MEMS device is performed by oxygen plasma treatment.

7. The method of claim 1 wherein the steps of adjusting the resonant frequencies of the vibrating MEMS device is performed at a wafer scale.

8. The method of claim 1 wherein the masking material is a conformal masking material.

9. The method of claim 8 wherein the conformal masking material is selected from the family of parylenes (poly-para-xylenes).

10. The method of claim 1 wherein the etching the vibrating MEMS device at the first mass removal location of the vibrating MEMS device is performed using an etch process that minimizes material removal at locations other than the first mass removal location.

11. The method of claim 1 wherein the removing the photoresist at the first mass removal location using laser ablation is performed with an energy sufficient to remove the photoresist without damaging the structural layer used to form the vibrating MEMS device.

12. The method of claim 1 wherein the etching the vibrating MEMS device at the second mass removal location of the vibrating MEMS device is performed using an etch process that minimizes material removal at locations other than the second mass removal location.

13. The method of claim 1 wherein the etching the vibrating MEMS device at the first mass removal location or etching the vibrating MEMS device at the second mass removal location is performed using deep reactive ion etching.

14. The method of claim 1 wherein the determining the first mass removal amount of the vibrating MEMS device and the first mass removal location of the vibrating MEMS device is performed using the masking material.

15. The method of claim 1 wherein the etching the structural layer used to form the vibrating MEMS device is performed using deep reactive ion etching.